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Defect Engineering Of Advanced Semiconductor Devices
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Author :Symposium on Defect Engineering of Advanced Semiconductor Devices (2001, Strasbourg) Publisher : ISBN 13 : Total Pages :454 pages Book Rating :4.:/5 (174 download)
Book Synopsis Defect Engineering of Advanced Semiconductor Devices by : Symposium on Defect Engineering of Advanced Semiconductor Devices (2001, Strasbourg)
Download or read book Defect Engineering of Advanced Semiconductor Devices written by Symposium on Defect Engineering of Advanced Semiconductor Devices (2001, Strasbourg) and published by . This book was released on 2002 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect Engineering of Advanced Semiconductor Devices by : Privitera, V
Download or read book Defect Engineering of Advanced Semiconductor Devices written by Privitera, V and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect Engineering of Advanced Semiconductor Devices by : Harry Bernas
Download or read book Defect Engineering of Advanced Semiconductor Devices written by Harry Bernas and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings written by ENDEASD Workshop and published by . This book was released on 1999 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology VII by :
Download or read book Gettering and Defect Engineering in Semiconductor Technology VII written by and published by . This book was released on 1997 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield. This volume provides the most up-to-date information for scientists and engineers who are involved in the fields of semiconductor defect physics or materials science. Fundamental aspects, as well as technological problems, which are associated with defects in electronic materials and devices, are addressed. Due to the broad spectrum of topics covered, ranging from theoretical analyses to practical engineering solutions, the present book uniquely and complements others in the field. 1. Keynote Address. 2. Silicon Materials. 3. Gettering Techniques. 4. Oxygen in Silicon. 5. Erbium in Silicon. 6. Radiation Effects in Semiconductors. 7. Dislocations in Silicon. 8. Defect Engineering. 9. Advanced Semiconductor Materials and Devices. 10. Semiconductor Material and Device Diagnostics.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XII by :
Download or read book Gettering and Defect Engineering in Semiconductor Technology XII written by and published by . This book was released on 2007 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors'fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed The collection is divided into the chapters: Crystalline silicon for solar cells: single crystals, multi-crystalline Si, ribbons, Si thin films on substrates; Silicon-based materials and advanced semiconductor materials (strained Si, SOI, SiGe, SiC, Ge); Impurities (oxygen, carbon, nitrogen, fluorine, metals) in Si; Modeling/simulation of defects in Si/semiconductors; Defect engineering in microelectronics and photovoltaics; Gettering and passivation techniques; Defect and impurity characterization (physical and electrical); Si-based Nanostructures (nanocrystals, nanowires, nanodevices); Silicon-based heterostructures and optoelectronics. Essential reading for those wanting to keep up with the field.
Book Synopsis Gettering Anf Defect Engineering in Semiconductor Technology IX by :
Download or read book Gettering Anf Defect Engineering in Semiconductor Technology IX written by and published by . This book was released on 2001 with total page 850 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed. The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials. Furthermore, the unceasing efforts in research on Si-based materials have been able to overcome some of the most stringent limitations on a Si-based technology. In fact, demonstrations of the feasibility of integrating IV-IV heterostructures and light-emitting devices into silicon technology, together with the promise of 450mm wafers combined with 70 nm technology, seem set to maintain the performance advantages that cause more than 95% of all manufactured semiconductor devices to be fabricated in silicon. However, the demands for wider applications of solid-state electronics are increasing demands to be made for devices having higher performances or very special properties. This makes research, on advanced materials and devices which are based upon other semiconductors, a highly relevant strand of semiconductor research for the near future. These proceedings span a wide variety of topics: going from silicon crystal growth and substrates, to technological processes and analytical techniques, to dopant-defect interactions, gettering, Si opto-electronics, radiation-hardness and nanoelectronics. A small section is also dedicated to compound semiconductors and materials other than silicon.
Book Synopsis Defect Engineering in Semiconductor Growth, Processing, and Device Technology by : S. Ashok
Download or read book Defect Engineering in Semiconductor Growth, Processing, and Device Technology written by S. Ashok and published by . This book was released on 1992 with total page 1180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the San Francisco meeting of April-May 1992. Papers emphasize deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. Topics include: defects in bulk crystals, and in thin films; defect characterization; hydrogen interaction; processing induction of defects; quantum wells; ion implantation. Annotation copyright by Book News, Inc., Portland, OR
Book Synopsis Extended Defects in Semiconductors by : D. B. Holt
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology VII by : Cor Claeys
Download or read book Gettering and Defect Engineering in Semiconductor Technology VII written by Cor Claeys and published by Trans Tech Publications Ltd. This book was released on 1997-07-25 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.
Book Synopsis Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 by : S. Ashok
Download or read book Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 written by S. Ashok and published by . This book was released on 2002-08-09 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XV by : J.D. Murphy
Download or read book Gettering and Defect Engineering in Semiconductor Technology XV written by J.D. Murphy and published by Trans Tech Publications Ltd. This book was released on 2013-10-07 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XIII by : Martin Kittler
Download or read book Gettering and Defect Engineering in Semiconductor Technology XIII written by Martin Kittler and published by Trans Tech Publications Ltd. This book was released on 2009-10-28 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.
Book Synopsis Defects and Properties of Semiconductors by : J. Chikawa
Download or read book Defects and Properties of Semiconductors written by J. Chikawa and published by Springer. This book was released on 2011-12-25 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains nearly all of the papers presented at the Symposium on "Defects and Qualities of Semiconductors" which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project "Quality Developement of Semiconductors by Utilization of Crystal Defects" sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
Book Synopsis Gettering and Defect Engineering in Semiconductor Technology XII by : Anna Cavallini
Download or read book Gettering and Defect Engineering in Semiconductor Technology XII written by Anna Cavallini and published by Trans Tech Publications Ltd. This book was released on 2007-10-25 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume is indexed by Thomson Reuters CPCI-S (WoS). This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Book Synopsis Defects in Advanced Electronic Materials and Novel Low Dimensional Structures by : Jan Stehr
Download or read book Defects in Advanced Electronic Materials and Novel Low Dimensional Structures written by Jan Stehr and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap. Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers Addresses a range of defects in a variety of systems, providing a comparative approach Includes sections on advances in theory that provide insights on where this body of research might lead
