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Cvd Chemistry Of Organoborons For Boron Carbon Thin Film Depositions
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Book Synopsis Chemical vapour deposition of boron-carbon thin films from organoboron precursors by : Maiwulidan (Mewlude) Yimamu (Imam)
Download or read book Chemical vapour deposition of boron-carbon thin films from organoboron precursors written by Maiwulidan (Mewlude) Yimamu (Imam) and published by Linköping University Electronic Press. This book was released on 2016-01-13 with total page 29 pages. Available in PDF, EPUB and Kindle. Book excerpt: Boron-carbon (BxC) thin films enriched in 10B are potential neutron converting layers for 10Bbased solid-state neutron detectors given the good neutron absorption cross-section of 10B atoms in the thin film. Chemical Vapour Deposition (CVD) of such films faces the challenge that the maximum temperature tolerated by the aluminium substrate is 660 °C and low temperature CVD routes for BxC films are thus needed. This thesis presents the use of two different organoboron precursors, triethylboron –B(C2H5)3 (TEB) and trimethylboron – B(CH3)3 (TMB) as single-source precursors for CVD of BxC thin films. The CVD behaviour of TEB in thermal CVD has been studied by both BxC thin film deposition and quantum chemical calculations of the gas phase chemistry at the corresponding CVD conditions. The calculations predict that the gas phase reactions are dominated by ?-hydride eliminations of C2H4 to yield BH3. In addition, a complementary bimolecular reaction path based on H2-assisted C2H6 elimination to BH3 is also present at lower temperatures in the presence of hydrogen molecules. A temperature window of 600 – 1000 °C for deposition of X-ray amorphous BxC films with 2.5 ? x ? 4.5 is identified showing good film density (2.40 – 2.65 g/cm3) which is close to the bulk density of crystalline B4C, 2.52 g/cm3 and high hardness (29 – 39 GPa). The impurity level of H is lowered to < 1 at. % within the temperature window. Plasma chemical vapour deposition has been studied using TMB as single-source precursor in Ar plasma for investigating BxC thin film deposition at lower temperature than allowed by thermal CVD and further understanding of thin film deposition process. The effect of plasma power, total pressure, TMB and Ar gas flow on film composition and morphology are investigated. The highest B/C ratio of 1.9 is obtained at highest plasma power of 2400 W and TMB flow of 7 sccm. The H content in the films seems constant at 15±5 at. %. The B-C bond is dominant in the films with small amount of C-C and B-O bonds, which are likely due to the formation of amorphous carbon and surface oxidation, respectively. The film density is determined as 2.16±0.01 g/cm3 and the internal compressive stresses are measured to be <400 MPa.
Book Synopsis CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions by : Mewlude Imam
Download or read book CVD Chemistry of Organoborons for Boron-Carbon Thin Film Depositions written by Mewlude Imam and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Selective Area Deposition of Boron Thin Films Using a Novel Chemical Vapor Deposition Technique with Boranes and Carboranes by : Frank Keith Perkins
Download or read book Selective Area Deposition of Boron Thin Films Using a Novel Chemical Vapor Deposition Technique with Boranes and Carboranes written by Frank Keith Perkins and published by . This book was released on 1992 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride by : Roland Yingjie Tay
Download or read book Chemical Vapor Deposition Growth and Characterization of Two-Dimensional Hexagonal Boron Nitride written by Roland Yingjie Tay and published by Springer. This book was released on 2018-06-30 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis focuses on the growth of a new type of two-dimensional (2D) material known as hexagonal boron nitride (h-BN) using chemical vapor deposition (CVD). It also presents several significant breakthroughs in the authors’ understanding of the growth mechanism and development of new growth techniques, which are now well known in the field. Of particular importance is the pioneering work showing experimental proof that 2D crystals of h-BN can indeed be hexagonal in shape. This came as a major surprise to many working in the 2D field, as it had been generally assumed that hexagonal-shaped h-BN was impossible due to energy dynamics. Beyond growth, the thesis also reports on synthesis techniques that are geared toward commercial applications. Large-area aligned growth and up to an eightfold reduction in the cost of h-BN production are demonstrated. At present, all other 2D materials generally use h-BN as their dielectric layer and for encapsulation. As such, this thesis lays the cornerstone for using CVD 2D h-BN for this purpose.
Book Synopsis Chemical Vapor Deposition and Lattice Constant Measurements of Boron Carbide by : Dale Brewe
Download or read book Chemical Vapor Deposition and Lattice Constant Measurements of Boron Carbide written by Dale Brewe and published by . This book was released on 1986 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Vapor Deposition of Boron on a Carbon Monofilament Substrate-a Study of Residual Stresses and Deposition Kinetics by : Robert Michael Mehalso
Download or read book Chemical Vapor Deposition of Boron on a Carbon Monofilament Substrate-a Study of Residual Stresses and Deposition Kinetics written by Robert Michael Mehalso and published by . This book was released on 1973 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Chemical Vapor Deposition of Boron Carbide by : Arthur W. Moore
Download or read book Chemical Vapor Deposition of Boron Carbide written by Arthur W. Moore and published by . This book was released on 1969 with total page 45 pages. Available in PDF, EPUB and Kindle. Book excerpt: The chemical vapor deposition of boron carbide (B4C) was studied with the objective of preparing unusually hard specimens. Diamond pyramid microhardnesses at 100 gram load as high as 4800 kg/sq mm (20 percent greater than the value of 4000 kg/sq mm for hot-pressed B4C) were obtained on deposits prepared from BCl3 and CH4 at 2000-2100C. Massive specimens of such deposits could not be produced, but thick deposits were obtained at 1300C using a large excess of H2 and CH4 with the BCl3. Hardness and modulus of these low temperature deposits were normal (4000 kg/sq mm and 58,000,000 lb/sq in., respectively), and were not increased by thermal annealing. Doping of B4C with silicon or titanium had no substantial effect on hardness. (Author).
Book Synopsis Chemical Vapour Deposition of Boron and Boron Carbides by : Ulf Jansson
Download or read book Chemical Vapour Deposition of Boron and Boron Carbides written by Ulf Jansson and published by . This book was released on 1988 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Boron Synthesis, Structure, and Properties by : Jack Arnold Kohn
Download or read book Boron Synthesis, Structure, and Properties written by Jack Arnold Kohn and published by Springer. This book was released on 2013-12-01 with total page 201 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Novel Organometallic Precursors for the Chemical Vapor Deposition of Metal Thin Films by : Joseph Henry Rivers
Download or read book Novel Organometallic Precursors for the Chemical Vapor Deposition of Metal Thin Films written by Joseph Henry Rivers and published by . This book was released on 2010 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the growing demand for miniaturization of devices and for new materials with useful properties, the use of Chemical Vapor Deposition (CVD) for the manufacture of thin films is receiving growing attention. The synthesis of potentially volatile metal complexes and investigation of their use as CVD precursors is an important part of this process. The research presented addresses several major areas of this process, (i) the identification and synthesis of ligands which can impart volatility to a metal complex, (ii) the synthesis, characterization, and assessment of volatility of metal complexes containing these ligands, and (iii) the full materials characterization of thin films grown with these complexes. The use of trimethylphosphine, bis(trifluoromethyl)pyrazolate, and bis(trifluoromethyl)pyrrolyl ligands have been successfully used to synthesize volatile new complexes of cobalt, rhodium, and nickel, some of which show promise for use as potential CVD precursors.
Book Synopsis Progress in Boron Chemistry by : Howard Steinberg
Download or read book Progress in Boron Chemistry written by Howard Steinberg and published by . This book was released on 1970 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Method of Chemical Vapor Deposition of Boron Nitride Using Polymeric Cyanoborane by :
Download or read book Method of Chemical Vapor Deposition of Boron Nitride Using Polymeric Cyanoborane written by and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Polymeric cyanoborane is volatilized, decomposed by thermal or microwave plasma energy, and deposited on a substrate as an amorphous film containing boron, nitrogen and carbon. Residual carbon present in the film is removed by ammonia treatment at an increased temperature, producing an adherent, essentially stoichiometric boron nitride film.
Book Synopsis Synthesis and Application of Organoboron Compounds by : Elena Fernández
Download or read book Synthesis and Application of Organoboron Compounds written by Elena Fernández and published by Springer. This book was released on 2015-03-04 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: The series Topics in Organometallic Chemistry presents critical overviews of research results in organometallic chemistry. As our understanding of organometallic structure, properties and mechanisms increases, new ways are opened for the design of organometallic compounds and reactions tailored to the needs of such diverse areas as organic synthesis, medical research, biology and materials science. Thus the scope of coverage includes a broad range of topics in pure and applied organometallic chemistry, where new breakthroughs are being achieved that are of significance to a larger scientific audience. The individual volumes of Topics in Organometallic Chemistry are thematic. Review articles are generally invited by the volume editors.
Download or read book Boron Chemistry — 3 written by H. Nöth and published by Elsevier. This book was released on 2013-10-22 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt: Boron Chemistry contains the selected lectures presented at the Third International Meeting on Boron Chemistry held at Munich & Ettal, FRG on July 5-9, 1976. Separating nine papers as chapters, this book discusses effects of orbital vacancies in boron compounds, the aminoboronation reaction, and the cyclic coordination of boron compounds. This text also explores the organoboranes in synthesis and analysis; the synthesis, structure, and chemical reactions of metalloboranes; and studies of the smaller boron hydrides and their derivatives.
Book Synopsis Chemical Vapor Deposition, Doping and Characterization of Boron Phosphide by : Shyam Gopal Garg
Download or read book Chemical Vapor Deposition, Doping and Characterization of Boron Phosphide written by Shyam Gopal Garg and published by . This book was released on 1981 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Boron and Cl, Br, I, S, Se, Te. Carbonares by : Gert Heller
Download or read book Boron and Cl, Br, I, S, Se, Te. Carbonares written by Gert Heller and published by Springer. This book was released on 1991-11-04 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume encompasses the compounds of boron with Cl, Br, I, S, Se, and Te. The large final chapter treats carboranes and metallocarboranes and gives a listing of carborane-containing polymers. Each chapter continues the corresponding chapter of the preceding supplement series, thus keeping information of the desired topics current. Among the wealth of boron compounds two of these may be especially mentioned: BCl3 and carboranes containing five boron atoms. Boron trichloride has become an important chemical agent, and much is known of its preparation, purification, and application. BCl3 is a preferred boron-supplying compound in chemical vapor deposition to prepare boron carbide or boron nitride. BC13 is also frequently used in dry-etching, boriding, and doping processes, and as a polymerization catalyst. Recent interest in the field of C2B5H7 carboranes and their derivatives stems from detailed investigations on a large number of isomerisation reactions and their mechanisms.
Book Synopsis Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-Germanium Films from Disilane, Germane and Chlorine for Source/ Drain Junctions of Nanoscale CMOS. by :
Download or read book Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-Germanium Films from Disilane, Germane and Chlorine for Source/ Drain Junctions of Nanoscale CMOS. written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: As metal-oxide semiconductor field effect transistors (MOSFETs) are scaled for higher speed and reduced power, new challenges are imposed on the source/drain junctions and their contacts. Future junction technologies are required to produce ultra-shallow junctions with junction depths as low as 4 nm, above-equilibrium dopant activation, super-abrupt doping profiles and specific contact resistivity values below 1x10− & 8312; &!cm2. Recently, selectively deposited, boron doped Si1−[subscript x]Ge[subscript x] junctions have been proposed to overcome these challenges. Success of technology relies on selective chemical vapor deposition of the process and satisfying stringent requirements for process integration. In the present work, the effects of process conditions on selective deposition of heavily boron doped Si1−[subscript x]Ge[subscript x] is investigated using Si2H6 and GeH4 as the precursors. It was found that addition of large amounts of diborane resulted in selectivity degradation. Addition of chlorine improved selectivity for both doped and undoped Si1−[subscript x]Ge[subscript x] depositions. It was shown that addition of chlorine to the undoped Si1−Ge[subscript x] deposition chemistry resulted in reduced surface roughness. It is proposed that chlorine preferentially segregates to the surface of the deposited films, and act as the surfactant. However, it was also found that addition of chlorine did not significantly impact the surface morphology of heavily boron doped Si1−Ge[subscript x]. It was shown that addition of chlorine strongly interfered with Ge and B incorporation. Furthermore, it was found that chlorine resulted in enhanced Ge but reduced B incorporation. It is proposed that chlorine adsorption on the growing surfaces reduced the available sites for boron while promoting SiCl2 desorption at lower temperatures. Increase in deposition temperature for a.
