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Author : Peter Brian Joyce
Publisher :
ISBN 13 :
Total Pages : 310 pages
Book Rating : 4.:/5 (112 download)
Download or read book Controlled Growth of InAs/GaAs Self-assembled Quantum Dots written by Peter Brian Joyce and published by . This book was released on 2002 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Controlled Growth of InAs/GaAs Sel-assembled Quantum Dots written by and published by . This book was released on 2002 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zhiming M Wang
Publisher : Springer Science & Business Media
ISBN 13 : 0387741917
Total Pages : 470 pages
Book Rating : 4.3/5 (877 download)
Download or read book Self-Assembled Quantum Dots written by Zhiming M Wang and published by Springer Science & Business Media. This book was released on 2007-11-29 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: This multidisciplinary book provides up-to-date coverage of carrier and spin dynamics and energy transfer and structural interaction among nanostructures. Coverage also includes current device applications such as quantum dot lasers and detectors, as well as future applications to quantum information processing. The book will serve as a reference for anyone working with or planning to work with quantum dots.
Author : Bruno J. Riel
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (137 download)
Download or read book Mechanisms Governing the Growth of Self-assembled Quantum Dots written by Bruno J. Riel and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: We produced self-assembled quantum dot (QD) samples of InAs on GaAs by molecular beam epitaxy (MBE). With these, we explored growth effects as a function of InAs coverage for three arsenic pressures, and as a function of arsenic pressure at a specific InAs coverage. During growth, the samples were studied using reflection high energy electron diffraction (RHEED). These RHEED measurements were compared to low energy electron diffraction (LEED) measurements. To perform this ex-situ LEED characterisation, some samples were covered with an amorphous arsenic cap. This cap was thermally evaporated producing a clean, non-oxidised surface that was studied using LEED. We obtained non-ambiguous identification of the GaAs (001) surface reconstructions as well as timing information for the 2D to 3D transition during the growth of InAs on GaAs. Post growth characterisation of two sets of self-assembled QD samples, twelve samples in all, revealed the following: As a function of increasing the arsenic pressure used in QD growth, the photoluminescence (PL) of capped QDs is first redshifted at low arsenic pressures, and then blueshifted at high arsenic pressures. Scanning electron microscopy and atomic force microscopy of uncapped QDs show that as the arsenic pressure increases, the QD density increases while the average QD width and height decrease monotonically; these trends are consistent with the shift in PL for the high arsenic pressure samples, but are inconsistent with the shift in PL for the low pressure samples. This leads us to proposing a mechanism by which QDs may be modified as they are overgrown with capping material. We discuss the effects of adjusting the arsenic pressure on the formation of QDs and the mechanism by which QDs may be modified during capping.
Author :
Publisher : Academic Press
ISBN 13 : 0080864589
Total Pages : 385 pages
Book Rating : 4.0/5 (88 download)
Download or read book Self-Assembled InGaAs/GaAs Quantum Dots written by and published by Academic Press. This book was released on 1999-03-29 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major current subjects in the semiconductor research field.The atom-like density of states in quantum dots is expected to drastically improve semiconductor laser performance, and to develop new optical devices. However, since the first theoretical prediction for its great possibilities was presented in 1982, due to the difficulty of their fabrication process. Recently, the advent of self-organized quantum dots has made it possible to apply the results in important optical devices, and further progress is expected in the near future.The authors, working for Fujitsu Laboratories, are leading this quantum-dot research field. In this volume, they describe the state of the art in the entire field, with particular emphasis on practical applications.
Author : Suwit Kiravittaya
Publisher :
ISBN 13 : 9789741716449
Total Pages : 186 pages
Book Rating : 4.7/5 (164 download)
Download or read book Homogeneity Improvement of InAs/GaAs Self-assembled Quantum Dots Grown by Molecular Beam Epitaxy written by Suwit Kiravittaya and published by . This book was released on 2002 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Arjun Mandal
Publisher : Springer
ISBN 13 : 9811043345
Total Pages : 84 pages
Book Rating : 4.8/5 (11 download)
Download or read book Impact of Ion Implantation on Quantum Dot Heterostructures and Devices written by Arjun Mandal and published by Springer. This book was released on 2017-06-02 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book looks at the effects of ion implantation as an effective post-growth technique to improve the material properties, and ultimately, the device performance of In(Ga)As/GaAs quantum dot (QD) heterostructures. Over the past two decades, In(Ga)As/GaAs-based QD heterostructures have marked their superiority, particularly for application in lasers and photodetectors. Several in-situ and ex-situ techniques that improve material quality and device performance have already been reported. These techniques are necessary to maintain dot density and dot size uniformity in QD heterostructures and also to improve the material quality of heterostructures by removing defects from the system. While rapid thermal annealing, pulsed laser annealing and the hydrogen passivation technique have been popular as post-growth methods, ion implantation had not been explored largely as a post-growth method for improving the material properties of In(Ga)As/GaAs QD heterostructures. This work attempts to remedy this gap in the literature. The work also looks at introduction of a capping layer of quaternary alloy InAlGaAs over these In(Ga)As/GaAs QDs to achieve better QD characteristics. The contents of this volume will prove useful to researchers and professionals involved in the study of QDs and QD-based devices.
Author : Siddhārtha Ghosha
Publisher :
ISBN 13 :
Total Pages : 350 pages
Book Rating : 4.3/5 (91 download)
Download or read book Growth of In(Ga)As/GaAs Self-organized Quantum Dots and Their Application to High-speed Lasers and Spin-polarized Light Sources written by Siddhārtha Ghosha and published by . This book was released on 2003 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Nand Lal Sharma
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (11 download)
Download or read book Molecular Beam Epitaxy of Tailored (In,Ga)As/GaAs Quantum Dot Heterostructures written by Nand Lal Sharma and published by . This book was released on 2017 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is focused on the growth of self-assembled (In,Ga)As/GaAs quantum dots (QDs) by the molecular beam epitaxy on the GaAs(100) substrate. The InAs/GaAs is a mature material system which allows precise fabrication of the complex heterostructures of a high quality. The InAs QDs are promising semiconductor quantum emitters and it is also possible to grow them in a spatially controlled manner which allows novel device fabrications. All this together makes InAs/GaAs a very attractive material system for the applications in the field of quantum communication.In the first part of the thesis, the growth of low density (In,Ga)As QDs for single dot spectroscopy is realized by an In-gradient approach. In this approach, the substrate rotation is paused during InAs deposition, which results in a density gradient on the substrate surface. The emission wavelength of the QDs should be around 900-1000 nm so that the efficient Si-detection technology can be used. In this thesis the emission energy tuning of QDs is done by the In-flush technique or by growing InxGa1-xAs QDs.In the second part of the thesis, we demonstrate a simplified gradient method to grow low density quantum dot molecules, utilizing the In-gradient approach and strain induced nucleation. The influence of the bottom QD layer on the growth of the top QD layer is studied by varying InAs amount for the top layer growth while keeping the interdot barrier thickness constant.In the last part of the thesis, the patterning and regrowth technology for the site-controlled QDs fabrication is discussed. In the process, the nanohole arrays are patterned on the substrate for preferential nucleation of QDs during the regrowth process. The nanohole patterning and the QD growth process is optimized for single QD per hole occupancy. ; eng
Author : Jamie Dean Phillips
Publisher :
ISBN 13 :
Total Pages : 410 pages
Book Rating : 4.3/5 (91 download)
Download or read book Self-assembled In(Al,Ga)As/Ga(Al)As Quantum Dots for Intersubband Detectors written by Jamie Dean Phillips and published by . This book was released on 1998 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Verzameling propagandamateriaal voor de parlementsverkiezingen in Indonesië, april 2009 written by and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Bruce A. Joyce
Publisher : Springer Science & Business Media
ISBN 13 : 140203315X
Total Pages : 401 pages
Book Rating : 4.4/5 (2 download)
Download or read book Quantum Dots: Fundamentals, Applications, and Frontiers written by Bruce A. Joyce and published by Springer Science & Business Media. This book was released on 2006-03-30 with total page 401 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains papers delivered at a NATO Advanced Research Workshop and provides a broad introduction to all major aspects of quantum dot structures. Such structures have been produced for studies of basic physical phenomena, for device fabrication and, on a more speculative level, have been suggested as components of a solid-state realization of a quantum computer. The book is structured so that the reader is introduced to the methods used to produce and control quantum dots, followed by discussions of their structural, electronic, and optical properties. It concludes with examples of how their optical properties can be used in practical devices, including lasers and light-emitting diodes operating at the commercially important wavelengths of 1.3 Am and 1.55 Am."
Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0080560474
Total Pages : 862 pages
Book Rating : 4.0/5 (85 download)
Download or read book Handbook of Self Assembled Semiconductor Nanostructures for Novel Devices in Photonics and Electronics written by Mohamed Henini and published by Elsevier. This book was released on 2011-07-28 with total page 862 pages. Available in PDF, EPUB and Kindle. Book excerpt: The self-assembled nanostructured materials described in this book offer a number of advantages over conventional material technologies in a wide range of sectors. World leaders in the field of self-organisation of nanostructures review the current status of research and development in the field, and give an account of the formation, properties, and self-organisation of semiconductor nanostructures. Chapters on structural, electronic and optical properties, and devices based on self-organised nanostructures are also included. Future research work on self-assembled nanostructures will connect diverse areas of material science, physics, chemistry, electronics and optoelectronics. This book will provide an excellent starting point for workers entering the field and a useful reference to the nanostructured materials research community. It will be useful to any scientist who is involved in nanotechnology and those wishing to gain a view of what is possible with modern fabrication technology. Mohamed Henini is a Professor of Applied Physics at the University of Nottingham. He has authored and co-authored over 750 papers in international journals and conference proceedings and is the founder of two international conferences. He is the Editor-in-Chief of Microelectronics Journal and has edited three previous Elsevier books. Contributors are world leaders in the field Brings together all the factors which are essential in self-organisation of quantum nanostructures Reviews the current status of research and development in self-organised nanostructured materials Provides a ready source of information on a wide range of topics Useful to any scientist who is involved in nanotechnology Excellent starting point for workers entering the field Serves as an excellent reference manual
Author : Yasuaki Masumoto
Publisher : Springer Science & Business Media
ISBN 13 : 9783540428053
Total Pages : 520 pages
Book Rating : 4.4/5 (28 download)
Download or read book Semiconductor Quantum Dots written by Yasuaki Masumoto and published by Springer Science & Business Media. This book was released on 2002-05-28 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Growth of Self Organized Quantum Dots / J.-S. Lee / - Excitonic Structures and Optical Properties of Quantum Dots / Toshihide Takagahara / - Electron-Phonon Interactions in Semiconductor Quantum Dots / Toshihide Takagahara / - Micro-Imaging and Single Dot Spectroscopy of Self Assembled Quantum Dots / Mitsuru Sugisaki / - Persistent Spectral Hole Burning in Semiconductor Quantum Dots / Yasuaki Masumoto / - Dynamics of Carrier Relaxation in Self Assembled Quantum Dots / Ivan V. Ignatiev, Igor E. Kozin / - Resonant Two-Photon Spectroscopy of Quantum Dots / Alexander Baranov / - Homogeneous Width of Confined Excitons in Quantum Dots - Experimental / Yasuaki Masumoto / - Theory of Exciton Dephasing in Semiconductor Quantum Dots / Toshihide Takagahara / - Excitonic Optical Nonlinearity and Weakly Correlated Exciton-Pair States / Selvakumar V. Nair, Toshihide Takagahara / - Coulomb Effects in the Optical Spectra of Highly Excited Semiconductor Quantum Dots / Selvakumar V. Nair / - Device ...
Author : Stefano Bellucci
Publisher : Springer Science & Business Media
ISBN 13 : 1461407427
Total Pages : 278 pages
Book Rating : 4.4/5 (614 download)
Download or read book Self-Assembly of Nanostructures written by Stefano Bellucci and published by Springer Science & Business Media. This book was released on 2011-10-27 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the third volume in a series of books on selected topics in Nanoscale Science and Technology based on lectures given at the well-known Istituto Nazionale di Fisica Nucleare (INFN) schools of the same name. The present set of notes stems in particular from the participation and dedication of prestigious lecturers, such as Nunzio Motta, Fulvia Patella, Alexandr Toropov, and Anna Sgarlata. All lectures have been carefully edited and reworked, taking into account extensive follow-up discussions. A tutorial lecture by Motta et al. presents the analysis of the Poly(3-hexylthiophene) self assembly on carbon nanotubes and discusses how the interaction between the two materials forms a new hybrid nanostructure, with potential application to future solar cells technology. In their contribution, Patella et al. review quantum dots of III-V compounds, which offer appealing perspectives for more sophisticated applications in new generation devices such as single-photon emitters for nano-photonics and quantum computing. Focusing on self-assembled quantum dots, the chapter by Alexandr Toropov et al. provides a comprehensive review of some important aspects in the formation of quantum dots and presents the results of the authors’ extensive investigation of the features of droplet epitaxy. The fourth contribution, by Sgarlata et al., focuses on recent progress toward controlled growth of self-assembled nanostructures, dealing with the shaping, ordering and localization in Ge/Si heteroepitaxy and reviewing recent results on the self-organization of Ge nanostructures at Si surfaces.
Author :
Publisher :
ISBN 13 :
Total Pages : 2 pages
Book Rating : 4.:/5 (469 download)
Download or read book Mme la comtesse Dash (Cisterne de Courtras, vicomtesse de Saint-Mars). written by and published by . This book was released on 1866 with total page 2 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 35 pages
Book Rating : 4.:/5 (742 download)
Download or read book Study of the Formation Mechanism of Self-Assembled Quantum Dot Arrays with a Focus on Alloying and Nucleation Control written by and published by . This book was released on 2004 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of the research project is to further the understanding of key materials science with regard to the formation mechanism of semiconductor self assembled quantum dots via epitaxy. During the funding period of 3+ years, we have made significant progress in that direction. We have conducted in-depth study on the following specific topics: the importance of alloying during epitaxial growth of SAQDs; the function of buried misfit dislocation in guided self-assembly by epitaxy; key issues pertinent to the growth of III-V on Si(001); and finally, the feasibility of fabricating quantum dot lasers of InAs or GaAs on Si. The importance of alloying was studied using the combination of Ge SAQD on Si in which the critical dot size for pyramid-to-dome transition was shown to increase significantly with increasing intermixing between Ge and Si. Using a buried misfit dislocation network, we have been able to demonstrate three distinctively different types of nucleation sites on Si(001). Furthermore, a properly designed, partially relaxed SiGe buffer layer has been shown to be a valuable vehicle for studying the formation mechanism of Ge SAQDs on Si. One of the applications was to experimentally determine the diffusion constant of Ge on Si and on Sb covered Si. We have also shown that the growth of III-V on Si is via Vomer-Weber mode without a wetting layer. Furthermore, the critical dot size for dislocation of InAs SAQDs on Si is less than 5 nm, making it a fundamental hurdle for fabricating lasers on Si.
