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Contribution A La Modelisation Non Lineaire De Hemts De Puissance
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Book Synopsis Parameter Extraction and Complex Nonlinear Transistor Models by : Gunter Kompa
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 609 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Book Synopsis Modern Surface Organometallic Chemistry by : Jean-Marie Basset
Download or read book Modern Surface Organometallic Chemistry written by Jean-Marie Basset and published by John Wiley & Sons. This book was released on 2009-07-10 with total page 725 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering everything from the basics to recent applications, this monograph represents an advanced overview of the field. Edited by internationally acclaimed experts respected throughout the community, the book is clearly divided into sections on fundamental and applied surface organometallic chemistry. Backed by numerous examples from the recent literature, this is a key reference for all chemists.
Download or read book ZnO Thin Films written by Paolo Mele and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films.
Download or read book HEMTs and HBTs written by Fazal Ali and published by Artech House Microwave Library. This book was released on 1991 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.
Book Synopsis Microwave Field-Effect Transistors by : Raymond S. Pengelly
Download or read book Microwave Field-Effect Transistors written by Raymond S. Pengelly and published by IET. This book was released on 1994-06-30 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: The following topics are dealt with: GaAs FET theory-small signal; GaAs FET theory-power; requirements and fabrication of GaAs FETs; design of transistor amplifiers; FET mixers; GaAs FET oscillators; FET and IC packaging; FET circuits; gallium arsenide integrated circuits; and other III-V materials and devices
Book Synopsis 2021 19th IEEE International New Circuits and Systems Conference (NEWCAS) by : IEEE Staff
Download or read book 2021 19th IEEE International New Circuits and Systems Conference (NEWCAS) written by IEEE Staff and published by . This book was released on 2021-06-13 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The topics include, but are not limited to Analog mixed signal circuits Biomedical circuits and systems CAD and design tools Communication circuits and systems Test and verification RF & microwave circuits Computer architecture and memory Digital circuits Digital signal processing Imaging and image sensors Low power low voltage designs Embedded systems Energy harvesting circuits Sensory circuits and systems Neuromorphic circuits & systems Technology Trends
Book Synopsis Silicon Systems for Wireless LAN by : Zoran Stamenkovic
Download or read book Silicon Systems for Wireless LAN written by Zoran Stamenkovic and published by World Scientific Publishing (Uk)Limited. This book was released on 2020-09-14 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today's integrated silicon circuits and systems for wireless communications are of a huge complexity. This unique compendium covers all the steps (from the system-level to the transistor-level) necessary to design, model, verify, implement, and test a silicon system. It bridges the gap between the system-world and the transistor-world (between communication, system, circuit, device, and test engineers). It is extremely important nowadays (and will be more important in the future) for communication, system, and circuit engineers to understand the physical implications of system and circuit solutions based on hardware/software co-design as well as for device and test engineers to cope with the system and circuit requirements in terms of power, speed, and data throughput.
Book Synopsis 2021 20th International Workshop on Junction Technology (IWJT) by : IEEE Staff
Download or read book 2021 20th International Workshop on Junction Technology (IWJT) written by IEEE Staff and published by . This book was released on 2021-06-10 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: IWJT is an open forum focused on the needs and interests of the community on junction formation technology in semiconductors In previous IWJTs, a number of eminent and experienced scientists and engineers from Asia, America and Europe presented their latest results on junction technology The workshop will provide a good opportunity for researchers and engineers to present their latest research results, and exchange ideas with leading scientists