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Author : F. G. P. Seidl
Publisher :
ISBN 13 :
Total Pages : 56 pages
Book Rating : 4.:/5 (244 download)
Download or read book Contact-potential Studies on Silicon and Germanium Surfaces written by F. G. P. Seidl and published by . This book was released on 1943 with total page 56 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gudrun Kissinger
Publisher : CRC Press
ISBN 13 : 1466586656
Total Pages : 424 pages
Book Rating : 4.4/5 (665 download)
Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Author : James Philip Downing
Publisher :
ISBN 13 :
Total Pages : 192 pages
Book Rating : 4.:/5 (29 download)
Download or read book Effects of Ambients on Germanium Surfaces written by James Philip Downing and published by . This book was released on 1968 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hwei Yin Serene Koh
Publisher : Stanford University
ISBN 13 :
Total Pages : 238 pages
Book Rating : 4.F/5 ( download)
Download or read book Rapid Melt Growth of Silicon Germanium for Heterogeneous Integration on Silicon written by Hwei Yin Serene Koh and published by Stanford University. This book was released on 2011 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon has made modern integrated circuit technology possible. As MOSFET gate lengths are scaled to 22nm and beyond, it has become apparent that new materials must be introduced to the silicon-based CMOS process for improved performance and functionality. This dissertation begins with a review of the MOSFET leakage current problem and presents one potential solution: Band-to-Band Tunneling (BTBT) transistors, which have the potential for steeper subthreshold slopes because they do not have the fundamental 'kT/q' limit in the rate at which conventional MOSFETs can be turned on or off. It is clear that these devices must be fabricated in materials with smaller bandgaps for improved performance. Silicon Germanium (SiGe) is one possible material system that could be used to fabricate enhanced BTBT transistors. Rapid Melt Growth (RMG) is a technique that has been used to recrystallize materials on Si substrates. RMG, however, has not previously been applied to SiGe, a binary alloy with large separation in the liquidus-solidus curve in its phase diagram. The development of process and experimental results for obtaining SiGe-on-insulator (SGOI) from bulk Si substrates through RMG are presented. The theory of RMG is analyzed and compositional profiles obtained during RMG of SiGe are modeled to understand why we were able to obtain high quality lateral compositionally graded SGOI substrates. The success of RMG SiGe suggests that the RMG technique can also be applied to III-V ternary and quaternary compounds with similar pseudo-binary phase diagrams. This opens up a wide range of material possibilities with the potential for novel applications in heterogeneous integration and 3-D device technology.
Author : Deng-Sung Lin
Publisher :
ISBN 13 :
Total Pages : 354 pages
Book Rating : 4.:/5 (329 download)
Download or read book Studies of the Growth of Silicon and Germanium Overlayers written by Deng-Sung Lin and published by . This book was released on 1994 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: Surface reconstruction, atomic charge transfer, step formation, atomic structure and defects on the clean Si and Ge surfaces and the grown Si-on-Ge and Ge-on-Si overlayers were systematically studied. Adsorption mechanisms, surface species, chemical reactions, atomic composition and ordering, and film morphology during the growth using molecular beam epitaxy (MBE) and vapor phase epitaxy (VPE) were thoroughly investigated. In these studies, detailed atomistic descriptions of crystal growth by MBE and VPE were obtained by utilizing high resolution core-level photoemission with synchrotron radiation, electron diffraction, and scanning tunneling microscopy. The dimer bond ionicities of Si and Ge(100)-(2 x 1) surfaces were examined by means of epitaxial growth of Ge on Si(100)-(2 x 1). The MBE growth technique allows replacing the top Si layers layerwise by Ge. After substituting Ge for the top Si dimer layer, we can obtain the core-level line shape for the Ge dimer layer without the interference from bulk Ge emission and the core-level line shape for Si emission without the top dimer layer contribution. The results clarify the charge asymmetry of the two dimer atoms. Subsurface core-level shifts were also identified. The growth of Si on Ge(100)-(2 x 1) and Ge(111)-c(2 x 8) via MBE was explored with high resolution core-level spectroscopy and STM. By monitoring the distinct surface core-level shifts and intensities, the atomic species and their relative populations were revealed. The film morphology, growth mode, and the surface structure of the clean surfaces and the grown film were all investigated by STM. The results showed significant intermixing at the interface at fairly low temperature. The atomistic behavior and the growth mode were explained in terms of the surface energy and the effect of segregated Ge as a surfactant. In the Si VPE on Si(100)-(2 x 1), Ge(100)-(2 x 1), and Ge(111)-c(2 x 8) using disilane, STM images resolved the adsorption geometry of individual dissociated fragments, ordering kinetics, and grown film morphology. By combining information from the core-level spectroscopy, the STM images, and the electron diffraction results, a detailed description of adsorption, thermal reactions, and hydrogen desorption proceeded during VPE was obtained. An "atomic layer epitaxy" (ALE) process was also developed to grow epitaxial Si layerwise at temperatures as low as 820 K.
Author : Bei Liu
Publisher :
ISBN 13 :
Total Pages : 186 pages
Book Rating : 4.:/5 (477 download)
Download or read book Theoretical Studies of Isolated Silicon and Germanium Clusters, and Silicon Clusters on Si(111)-7x7 Surface written by Bei Liu and published by . This book was released on 2001 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have performed a systematic search for the ground state geometry of Si[directly over n] and Si[− directly over n] in the size range 3[Less than or equal to]n[Less than or equal to]20 within the framework of density functional theory (DFT) with the local density approximation (LDA) and generalized gradient approximation (GGA). Various properties such as ionization potentials for neutral clusters, vertical detachment energies and photoelectron spectra for anions, fragmentation pathways and dissociation energies for cations, and mobilities for both anions and cations, are calculated and compared with experiments. The structures for medium-sized clusters (10[Less than or equal to]n[Less than or equal to]20) generally follow the prolate "stacked Si9 tricapped trigonal prism (TTP)" pattern. Both bulk silicon and bulk germanium pack in a tetrahedral "diamond" lattice. Small silicon and germanium clusters with n[Less than or equal to]10 also have identical geometries. We performed a systematic ground state search for Ge[Subscript n] and Ge[+ directly over n] up to 16 atoms. Like silicon clusters, medium-sized germanium clusters build up by stacking TTP subunits but the global minima for sizes starting from n=13 differ in details indicating that the growth patterns of silicon and germanium clusters diverge after n=12. Global minima search for silicon clusters (n=6-14) on the Si(111)7x7 surface were also carried out using both simulated annealing and a genetic algorithm. For n=6 and n=7, cluster atoms are anchored to the surfaces to saturate the dangling bonds of the surfaces but the cluster atoms are not bonded together directly. Starting from n=8, cluster atoms bond together and the clusters begin to grow in three dimensions for n[Less than or equal to]13.
Author : Richard Philip Grayeski
Publisher :
ISBN 13 :
Total Pages : 74 pages
Book Rating : 4.:/5 (244 download)
Download or read book Alloying of Germanium Surfaces by Silicon Ion Implantation written by Richard Philip Grayeski and published by . This book was released on 1985 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert Milton Oman
Publisher :
ISBN 13 :
Total Pages : 74 pages
Book Rating : 4.:/5 (24 download)
Download or read book A Study of Certain Surface Properties of Silicon and Germanium Crystals Cleaned by Ion Bombardment written by Robert Milton Oman and published by . This book was released on 1960 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : R. J. Jaccodine
Publisher :
ISBN 13 :
Total Pages : 4 pages
Book Rating : 4.:/5 (837 download)
Download or read book Surface Energy of Germanium and Silicon written by R. J. Jaccodine and published by . This book was released on 1963 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yongjun Zheng
Publisher :
ISBN 13 : 9780599831490
Total Pages : 275 pages
Book Rating : 4.8/5 (314 download)
Download or read book Kinetic Studies of Growth of Silicon and Silicon Germanium Thin Films: Gas-surface Reactivity, Germanium Surface Segregation, and the Effect of Coincident Atomic Hydrogen written by Yongjun Zheng and published by . This book was released on 2000 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the kinetic studies presented in this thesis, a novel process was proposed to achieve selective epitaxial growth of Si and Si1-x Gex. Preliminary results show that up to 300 nm epitaxial silicon has been grown while with no sign of polycrystalline silicon growth.
Author : Hong Li
Publisher :
ISBN 13 :
Total Pages : 216 pages
Book Rating : 4.:/5 (348 download)
Download or read book Studies on Silicon and Germanium Ferrocenyl Compounds written by Hong Li and published by . This book was released on 1993 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Thomas Joseph Miller
Publisher :
ISBN 13 :
Total Pages : 248 pages
Book Rating : 4.:/5 (147 download)
Download or read book Photoemission Spectroscopy of Germanium Surfaces, Interfaces, and Germanium-silicon Systems written by Thomas Joseph Miller and published by . This book was released on 1986 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Martin Douglas McDaniel
Publisher :
ISBN 13 :
Total Pages : 550 pages
Book Rating : 4.:/5 (919 download)
Download or read book Monolithic Integration of Crystalline Oxides on Silicon and Germanium Using Atomic Layer Deposition written by Martin Douglas McDaniel and published by . This book was released on 2015 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: Inside your microelectronic devices there are up to a billion transistors working in flawless operation. Silicon has been the workhorse semiconductor used for the transistor; however, there must be a transition to materials other than silicon, such as germanium, with future device sizes. In addition, new dielectric oxide materials are needed. My research has examined a type of crystalline oxide, known as a perovskite, which is selected for its ability to bond chemically to Si and Ge, and eliminate the electrical defects that affect performance. Many perovskite oxides are lattice-matched to the Si (001) and Ge (001) surface spacing, enabling heteroepitaxy. To date, the majority of research on crystalline oxides integrated with semiconductors has been based on strontium titanate, SrTiO3, epitaxially grown on Si (001) by molecular beam epitaxy. Alternative low-temperature growth methods, such as atomic layer deposition (ALD), offer both practical and economic benefits for the integration of crystalline oxides on semiconductors. My initial research informed the broader community that four unit cells (~1.5 nm) of SrTiO3 are required to enable heteroepitaxy on Si. The research has also shown that heteroepitaxial layers can be monolithically integrated with Si (001) without the formation of a SiOx interlayer between the Si (001) surface and the SrTiO3 layer because ALD is performed at lower temperatures than are typical for MBE. Thus, a combined MBE-ALD growth technique creates possible advantages in device designs that require the crystalline oxide to be in contact with the Si (001) surface. In recent work, I have demonstrated a method for integrating crystalline oxides directly on Ge by ALD. Germanium is being explored as an alternative channel material due to its higher hole and electron mobilities than Si, potentially enabling device operation at higher speed. This all-chemical growth process is expected to be scalable, is inherently less costly from a manufacturing cost of ownership, and is based on current manufacturing tool infrastructure. The impact of my research will be in continued scaling of device dimensions with novel materials that will provide faster speed and lower power consumption for microelectronic devices.
Author : Christer Larsson (tekn. dr.)
Publisher :
ISBN 13 :
Total Pages : 58 pages
Book Rating : 4.:/5 (185 download)
Download or read book Water and Ammonia Reactions on Silicon and Germanium Surfaces written by Christer Larsson (tekn. dr.) and published by . This book was released on 1990 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jai-Joon Choi
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (137 download)
Download or read book The Effect of Adsorbed Impurities on the Structure of Silicon and Germanium Surfaces written by Jai-Joon Choi and published by . This book was released on 1970 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces written by and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The research discussed here has been carried out in order to advance the basic understanding of the compatibility between germanium surfaces and hafnium-based high Îo dielectric materials with a particular emphasis on their potential for microelectronic applications. To this end, spectroscopic studies were carried out to determine the physical and electronic properties of Ge/high-Îo structures, and MOS capacitors were fabricated to study their electrical characteristics. Crystallinity, thermal stability, electronic defect levels, and Hf d state degeneracy removal in this material system were studied via x-ray absorption spectroscopy (XAS). The presence of conduction band edge defect states was confirmed by spectroscopic ellipsometry (SE), and medium energy ion spectroscopy (MEIS) was employed to investigate chemical distributions within these structures. Capacitance-voltage (C-V) measurements made on related MOS structures provided valuable insight into the nature of carrier trapping and charged traps in these devices, and lastly, current-voltage (I-V) measurements revealed information about the integrity of these gate materials while in contact with germanium surfaces. While the nitridation of germanium surfaces was shown to mitigate atomic migration and diffusion to a degree during device processing, both hafnia and hafnium nitro-silicate films demonstrated a large degree of physical and chemical instability when in contact with germanium. Moreover, these difficulties were found to be correlated with electrically active defects which make this technology unsuitable for CMOS applications at present.
Author : J. J. Lander
Publisher :
ISBN 13 :
Total Pages : 9 pages
Book Rating : 4.:/5 (838 download)
Download or read book Structural Properties of Cleaved Silicon and Germanium Surfaces written by J. J. Lander and published by . This book was released on 1963 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt:
