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Comprehensive Research On The Stability And Electronic Properties Of A Sih And A Sigeh Alloys And Devices
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Book Synopsis Comprehensive Research on the Stability and Electronic Properties of A-Si:H and A-SiGe:H Alloys and Devices. Final Subcontract Report, 10 March 1991--30 August 1994 by :
Download or read book Comprehensive Research on the Stability and Electronic Properties of A-Si:H and A-SiGe:H Alloys and Devices. Final Subcontract Report, 10 March 1991--30 August 1994 written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes work on the growth of a-Si:H and a-(Si, Ge):H materials and devices using well-controlled growth techniques. The a-Si:H materials were grown at higher temperatures (300[degrees]-375[degrees]C) using electron-cyclotron-resonance (ECR) plasma techniques with a remote H beam. These films have excellent electronic quality and show significant improvements in stability compared with glow-discharge-produced a-Si:H materials. Several problems were encountered during the fabrication of devices in these materials, and we were able to overcome them by a systematic work on buffer layers in these cells. We also studied alternative designs for improving the stability of a-Si:H cells and produced graded-gap a-Si:H cells using glow-discharge that are more stable than comparable standard, ungraded glow discharge devices. Finally, systematic work was done to produce good-quality a-(Si, Ge):H films, using triode radio frequency (RF) glow-discharge with ion bombardment during growth. Diagnostic devices were made using these films, and the properties of the material, such as Urbach energies and hole mobility-lifetime products, were measured in these devices. We found a systematic increase in the Urbach energies, and a corresponding decrease in the hole and electron[mu][tau] products, as the Ge content of the alloys increases.
Book Synopsis Comprehensive Research on the Stability and Electronic Properties of A-Si by :
Download or read book Comprehensive Research on the Stability and Electronic Properties of A-Si written by and published by . This book was released on 1995 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report describes work on the growth of a-Si:H and a-(Si, Ge):H materials and devices using well-controlled growth techniques. The a-Si:H materials were grown at higher temperatures (300°-375°C) using electron-cyclotron-resonance (ECR) plasma techniques with a remote H beam. These films have excellent electronic quality and show significant improvements in stability compared with glow-discharge-produced a-Si:H materials. Several problems were encountered during the fabrication of devices in these materials, and we were able to overcome them by a systematic work on buffer layers in these cells. We also studied alternative designs for improving the stability of a-Si:H cells and produced graded-gap a-Si:H cells using glow-discharge that are more stable than comparable standard, ungraded glow discharge devices. Finally, systematic work was done to produce good-quality a-(Si, Ge):H films, using triode radio frequency (RF) glow-discharge with ion bombardment during growth. Diagnostic devices were made using these films, and the properties of the material, such as Urbach energies and hole mobility-lifetime products, were measured in these devices. We found a systematic increase in the Urbach energies, and a corresponding decrease in the hole and electron [mu][tau] products, as the Ge content of the alloys increases.
Book Synopsis Comprehensive Research on the Stability and Electronic Properties of A-Si:H and A-SiGe:H Alloys and Devices by : Vikram Dalal
Download or read book Comprehensive Research on the Stability and Electronic Properties of A-Si:H and A-SiGe:H Alloys and Devices written by Vikram Dalal and published by . This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices. Annual Report, May 31, 1995--May 30, 1996 by :
Download or read book Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices. Annual Report, May 31, 1995--May 30, 1996 written by and published by . This book was released on 1997 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si, Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion bombardment and etching, we can induce a more perfect lattice structure, and thereby improve the properties of the films and devices.
Book Synopsis Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices by :
Download or read book Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices written by and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this report, the authors describe the work done to improve the material and device properties of a-Si:H and a-(Si, Ge):H alloys prepared using electron cyclotron resonance (ECR) plasma deposition and to understand the growth chemistry. Major results were obtained in the following areas: (1) Influence of plasma chemistry on properties and stability of a-Si:H single-junction solar cells; (2) Fabrication of good-quality tandem-junction cells. The authors made tandem-junction a-Si/a-Si cells with excellent voltages and fill factors using the H-ECR process; (3) Growth of high-quality a-(Si, Ge):H films using the ECR deposition process; (4) Fabrication of single-junction devices in a-(Si, Ge):H for diagnosing the material; and (5) Graded-gap cells in a-(Si, Ge):H. Good devices were produced using a graded-gap I-layer. In summary, the most important finding from this research has been that plasma chemistry plays a very important role in determining the properties of the materials, particularly the properties of the a-(Si, Ge):H alloy system. Even in a-Si:H, plasma chemistry plays a role in determining stability. This result suggests that by deliberately changing the chemistry of deposition, one may be able to further improve the a-(Si, Ge):H materials system and make its properties comparable to the properties of a-Si:H. The ECR reactor has proved to be a very useful chemical tool, with excellent control over growth chemistry.
Book Synopsis Research on the Stability, Electronic Properties, and Structure of A-Si:H and Its Alloys by :
Download or read book Research on the Stability, Electronic Properties, and Structure of A-Si:H and Its Alloys written by and published by . This book was released on 1992 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Research on the Stability, Electronic Properties, and Structure of A-Si by :
Download or read book Research on the Stability, Electronic Properties, and Structure of A-Si written by and published by . This book was released on 1995 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt: The authors research has focused on defect metastability and a-Si:C:H alloys. A new aspect of the metastability is the growing interest in the defect recovery process. They have continued to explore the role of hydrogen in the metastability and other properties of a-Si:H. This has led them to perform first principles calculations of Si-H bonding configurations. Another new feature of the metastability work is the study of the effects in hydrogenated poly-silicon. They have grown and studied the properties of a-Si:C:H alloys, particularly to observe the effects of hydrogen dilution. Finally they have also studied the recent defect relaxation phenomenon, and concluded that the effects arise from contact effects and are not an intrinsic effect in a-Si:H. Section A presents some recent models of metastability. Section B discusses the metastability and equilibration effects in hydrogenated polysilicon, studied because of it's close similarity to a-Si:H. Section C describes results on a-Si:C:H alloys. Section D contains first principle LDA calculations of Si-H bonds and relates these results to the a-Si:H diffusion and metastability properties. In section E the authors report capacitance measurements aimed at exploring the recent results by Cohen et al who find an anomalous relaxation process from the trap filling kinetics of a DLTS experiment.
Book Synopsis Research on the Stability, Electronic Properties, and Structure of A-Si:H and Its Alloys by : W. B. Jackson
Download or read book Research on the Stability, Electronic Properties, and Structure of A-Si:H and Its Alloys written by W. B. Jackson and published by . This book was released on 1994 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices by : Jo Nijs
Download or read book Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices written by Jo Nijs and published by CRC Press. This book was released on 2021-05-30 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: One of the first books to cover advanced silicon-based technologies, Advanced Silicon and Semiconducting Silicon Alloy-Based Materials and Devices presents important directions for research into silicon, its alloy-based semiconducting devices, and its development in commercial applications. The first section deals with single/mono crystalline silicon, focusing on the effects of heavy doping; the structure and electronic properties of defects and their impact on devices; the MBE of silicon, silicon alloys, and metals; CVD techniques for silicon and silicon germanium; the material properties of silicon germanium strained layers; silicon germanium heterojunction bipolar applications; FETs, IR detectors, and resonant tunneling devices in silicon, silicon germanium, and d-doped silicon; and the fascinating properties of crystalline silicon carbide and its applications. The second section explores polycrystalline silicon. It examines large grain polysilicon substrates for solar cells; the properties, analysis, and modeling of polysilicon TFTs; the technology of polysilicon TFTs in LCD displays; and the use of polycrystalline silicon and its alloys in VLSI applications. With contributors from leading academic and industrial research centers, this book provides wide coverage of fabrication techniques, material properties, and device applications.
Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si by :
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si written by and published by . This book was released on 1997 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work done during this second phase of the University of Oregon's NREL subcontract focused on degradation studies in both pure a-Si:H and a-Si, Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow-discharge method and were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley laboratory. First, the results from the a-Si, Ge:H degradation studies support the conclusion that considerable quantities of charged defects exist in nominally intrinsic material. Researchers found that on light-soaking, all the observed defect sub-bands increased; however, their ratios varied significantly. Second, researchers performed voltage pulse stimulated capacitance transient measurements on a-Si:H/a-Si, Ge:H heterostructure samples and found a clear signature of trapped hole emission extending over long times. Finally, researchers began comparison studies of the electronic properties of a-Si:H grown by glow discharge either with 100% silane, or with silane diluted in H2 or He gas. The results on these samples indicate that the films grown under high hydrogen dilution exhibit roughly a factor of 3 lower deep defect densities than those grown using pure silane.
Book Synopsis Calculated Electronic Properties of Ordered Alloys by : V. L. Moruzzi
Download or read book Calculated Electronic Properties of Ordered Alloys written by V. L. Moruzzi and published by World Scientific. This book was released on 1995 with total page 449 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a handbook of calculated electronic properties of elements and of 3d/3d and 4d/4d ordered alloys. The book derives the ground-state or equilibrium properties of the metallic elements in both bcc and fcc structures, and of existing and nonexisting ordered binary transition-metal alloys in CsCl, CuAu, and Cu3Au structures by the analysis of binding curves, or total energy vs. volume curves, calculated from first-principles augmented-spherical-wave methods. The calculated properties, energy bands along symmetry lines in the respective Brillouin zones, and the total and I-decomposed density-of-states for each constituent is presented in a convenient single-page format. The calculated quantities presented include lattice constants, total energies, bulk moduli, potential at the nucleus, and charge densities at the nucleus and in the interstitial regions.
Book Synopsis Identifying Electronic Properties Relevant to Improving Stability in A-Si by :
Download or read book Identifying Electronic Properties Relevant to Improving Stability in A-Si written by and published by . This book was released on 1997 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work done during this second phase of the University of Oregon's NREL subcontract focused on degradation studies in both pure a-Si:H and a-Si, Ge:H alloys, as well as a detailed study of the interface between these two materials in a-Si:H/a-Si, Ge:H heterostructures. All samples discussed in this report were produced by the glow-discharge method and were obtained either in collaboration with United Solar Systems Corporation or with researchers at Lawrence Berkeley laboratory. First, the results from the a-Si, Ge:H degradation studies support the conclusion that considerable quantities of charged defects exist in nominally intrinsic material. Researchers found that on light-soaking, all the observed defect sub-bands increased; however, their ratios varied significantly. Second, researchers performed voltage pulse stimulated capacitance transient measurements on a-Si:H/a-Si, Ge:H heterostructure samples and found a clear signature of trapped hole emission extending over long times. Finally, researchers began comparison studies of the electronic properties of a-Si:H grown by glow discharge either with 100% silane, or with silane diluted in H2 or He gas. The results on these samples indicate that the films grown under high hydrogen dilution exhibit roughly a factor of 3 lower deep defect densities than those grown using pure silane.
Book Synopsis Properties of Semiconductor Alloys by : Sadao Adachi
Download or read book Properties of Semiconductor Alloys written by Sadao Adachi and published by John Wiley & Sons. This book was released on 2009-03-12 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.
Book Synopsis Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices. Annual Report, May 31, 1995--May 30, 1996 by :
Download or read book Comprehensive Research on Stability of Amorphous Silicon and Alloy Materials and Devices. Annual Report, May 31, 1995--May 30, 1996 written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report represents the progress achieved during the second year of our program to develop a-Si:H and a-(Si, Ge):H materials and devices with better stability by changing the chemistry of the growth technique. During this year, we have shifted our emphasis from cells made on tin oxide substrates (superstrate cells) to cells made on stainless steel substrates (substrate cells). The basic growth technique is to use a remote plasma beam of H or He, created by a low pressure ECR discharge, to create both growth and ion bombardment and/or etching during the growth of the films and devices. By inducing ion bombardment and etching, we can induce a more perfect lattice structure, and thereby improve the properties of the films and devices.
Author :Joginder Singh Galsin Publisher :Springer Science & Business Media ISBN 13 :1461512417 Total Pages :530 pages Book Rating :4.4/5 (615 download)
Book Synopsis Impurity Scattering in Metallic Alloys by : Joginder Singh Galsin
Download or read book Impurity Scattering in Metallic Alloys written by Joginder Singh Galsin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the introduction of quantum mechanics, the general theory of solid state physics has developed very rapidly. To date, a number of good textbooks on general solid state physics have been written. However, research in solid state physics has become highly specialized and undertaken in narrow fields. There is thus a great need for elementary textbooks that deal in detail with the study of solids in a particular field in order to give students basic knowledge in that field. Metallic solids with an impurity, generally called alloys, are of immense importance from both fundamental and technological points of view. The pioneering work of Bloember gen and Rowland (1953) gave considerable impetus to the study of the electronic structure of metallic alloys. Serious theoretical study in this field started in 1960 and, during the last two decades, considerable success in understanding the electronic structure of simple metal alloys has been achieved. Nonetheless the theoretical study of dilute alloys of transition metals is still in its infancy. At present there are few review articles and original research papers that examine the role of an impurity with respect to the electronic structure and properties of metallic alloys. Because of the absence of an elementary textbook that presents a comprehensive account of different aspects of the electronic structure of metallic alloys, I have written this elementary textbook on the theory of the electronic structure of metallic alloys.
Book Synopsis Structural and Phase Stability of Alloys by : José L. Morán-López
Download or read book Structural and Phase Stability of Alloys written by José L. Morán-López and published by Springer Science & Business Media. This book was released on 1992 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Experimental and theoretical aspects of magnetic and non-magnetic alloys, surfaces, thin films, and nanostructures, are presented in 17 papers from a May 1991 conference in Trieste, Italy, held by the International Centre for Theoretical Physics. Several papers use phenomenological approaches to des
Book Synopsis Phase Stability in Metals and Alloys by : Battelle Memorial Institute
Download or read book Phase Stability in Metals and Alloys written by Battelle Memorial Institute and published by . This book was released on 1967 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
