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Author : R. F. Kopf
Publisher : The Electrochemical Society
ISBN 13 : 9781566772662
Total Pages : 368 pages
Book Rating : 4.7/5 (726 download)
Download or read book Compound Semiconductor Power Transistors II and written by R. F. Kopf and published by The Electrochemical Society. This book was released on 2000 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Electrochemical Society. Meeting
Publisher : The Electrochemical Society
ISBN 13 : 9781566772228
Total Pages : 338 pages
Book Rating : 4.7/5 (722 download)
Download or read book Compound Semiconductor Power Transistors and written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 1998 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 354 pages
Book Rating : 4.:/5 (131 download)
Download or read book Compound Semiconductor Power Transistors II written by and published by . This book was released on 2000 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 : 9814467650
Total Pages : pages
Book Rating : 4.8/5 (144 download)
Download or read book Reliability and Radiation Effects in Compound Semiconductors written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tho T. Vu
Publisher : World Scientific
ISBN 13 : 9812383115
Total Pages : 363 pages
Book Rating : 4.8/5 (123 download)
Download or read book Compound Semiconductor Integrated Circuits written by Tho T. Vu and published by World Scientific. This book was released on 2003 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. Contents: Present and Future of High-Speed Compound Semiconductor IC's (T Otsuji); Transforming MMIC (E J Martinez); Distributed Amplifier for Fiber-Optic Communication Systems (H Shigematsu et al.); Microwave GaN-Based Power Transistors on Large-Scale Silicon Wafers (S Manohar et al.); Radiation Effects in High Speed III-V Integrated Circuits (T R Weatherford); Radiation Effects in III-V Semiconductor Electronics (B D Weaver et al.); Reliability and Radiation Hardness of Compound Semiconductors (S A Kayali & A H Johnston); and other papers. Readership: Engineers, scientists and graduate students working on high speed electronics and systems, and in the area of compound semiconductor integrated circuits.
Author : Sandip Tiwari
Publisher : Academic Press
ISBN 13 : 148328929X
Total Pages : 845 pages
Book Rating : 4.4/5 (832 download)
Download or read book Compound Semiconductor Device Physics written by Sandip Tiwari and published by Academic Press. This book was released on 2013-10-22 with total page 845 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions. One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding
Author : H. Craig Casey
Publisher : John Wiley & Sons
ISBN 13 : 0471171344
Total Pages : 549 pages
Book Rating : 4.4/5 (711 download)
Download or read book Devices for Integrated Circuits written by H. Craig Casey and published by John Wiley & Sons. This book was released on 1998-12-14 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.
Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789810223250
Total Pages : 388 pages
Book Rating : 4.2/5 (232 download)
Download or read book Compound Semiconductor Electronics written by Michael Shur and published by World Scientific. This book was released on 1996 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.
Author : Sandip Tiwari
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 :
Total Pages : 344 pages
Book Rating : 4.:/5 (318 download)
Download or read book Compound Semiconductor Transistors written by Sandip Tiwari and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1993 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zhaojun Liu
Publisher : Morgan & Claypool Publishers
ISBN 13 : 1627058532
Total Pages : 75 pages
Book Rating : 4.6/5 (27 download)
Download or read book Compound Semiconductor Materials and Devices written by Zhaojun Liu and published by Morgan & Claypool Publishers. This book was released on 2016-02-22 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
Author : Serge Oktyabrsky
Publisher : Springer Science & Business Media
ISBN 13 : 1441915478
Total Pages : 451 pages
Book Rating : 4.4/5 (419 download)
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author : Keh Yung Cheng
Publisher : Springer Nature
ISBN 13 : 3030519031
Total Pages : 537 pages
Book Rating : 4.0/5 (35 download)
Download or read book III–V Compound Semiconductors and Devices written by Keh Yung Cheng and published by Springer Nature. This book was released on 2020-11-08 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Author : Tingkai Li
Publisher : CRC Press
ISBN 13 : 1439815232
Total Pages : 588 pages
Book Rating : 4.4/5 (398 download)
Download or read book III-V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Author : Y Arakawa
Publisher : CRC Press
ISBN 13 : 1482268981
Total Pages : 888 pages
Book Rating : 4.4/5 (822 download)
Download or read book Compound Semiconductors 2001 written by Y Arakawa and published by CRC Press. This book was released on 2002-09-30 with total page 888 pages. Available in PDF, EPUB and Kindle. Book excerpt: An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical
Author : Kenneth A. Jackson
Publisher : John Wiley & Sons
ISBN 13 : 3527611770
Total Pages : 188 pages
Book Rating : 4.5/5 (276 download)
Download or read book Compound Semiconductor Devices written by Kenneth A. Jackson and published by John Wiley & Sons. This book was released on 2008-11-21 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductor Devices provides a comprehensive insight into today ́s standard technologies, covering the vast range of semiconductor products and their possible applications. The materials covered runs from the basics of conventional semiconductor technology through standard,power and opto semiconductors, to highly complex memories and microcontrollers and the special devices and modules for smartcards, automotive electronics, consumer electronics and telecommunications. Some chapters are devoted to the production of semiconductor components and their use in electronic systems as well as to quality management. The book offers students and users a unique overview of technology, architecture and areas of application of semiconductor products.
Author : Fumitaro Ishikawa
Publisher : CRC Press
ISBN 13 : 1315340720
Total Pages : 501 pages
Book Rating : 4.3/5 (153 download)
Download or read book Novel Compound Semiconductor Nanowires written by Fumitaro Ishikawa and published by CRC Press. This book was released on 2017-10-17 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: One dimensional electronic materials are expected to be key components owing to their potential applications in nanoscale electronics, optics, energy storage, and biology. Besides, compound semiconductors have been greatly developed as epitaxial growth crystal materials. Molecular beam and metalorganic vapor phase epitaxy approaches are representative techniques achieving 0D–2D quantum well, wire, and dot semiconductor III-V heterostructures with precise structural accuracy with atomic resolution. Based on the background of those epitaxial techniques, high-quality, single-crystalline III-V heterostructures have been achieved. III-V Nanowires have been proposed for the next generation of nanoscale optical and electrical devices such as nanowire light emitting diodes, lasers, photovoltaics, and transistors. Key issues for the realization of those devices involve the superior mobility and optical properties of III-V materials (i.e., nitride-, phosphide-, and arsenide-related heterostructure systems). Further, the developed epitaxial growth technique enables electronic carrier control through the formation of quantum structures and precise doping, which can be introduced into the nanowire system. The growth can extend the functions of the material systems through the introduction of elements with large miscibility gap, or, alternatively, by the formation of hybrid heterostructures between semiconductors and another material systems. This book reviews recent progresses of such novel III-V semiconductor nanowires, covering a wide range of aspects from the epitaxial growth to the device applications. Prospects of such advanced 1D structures for nanoscience and nanotechnology are also discussed.
Author : Tingkai Li
Publisher : Materials Research Society
ISBN 13 : 9781605113739
Total Pages : 0 pages
Book Rating : 4.1/5 (137 download)
Download or read book Compound Semiconductors for Generating, Emitting and Manipulating Energy: Volume 1396 written by Tingkai Li and published by Materials Research Society. This book was released on 2012-07-09 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Symposium O, "Compound Semiconductors for Generating, Emitting and Manipulating Energy" was held November 28-December 2 at the 2011 MRS Fall Meeting in Boston, Massachusetts. Energy is arguably the most important issue for the future and this symposium provided a forum to discuss the research and development for collecting, emitting, and manipulating energy. A particular focus was made on recent advances in the scientific and technological exploration of compound semiconductors for applications as light emitters, solar cells, and transistors. Additionally, the topics covered in this proceeding include a broad range reaching from fundamental material development to device demonstration and industrial implementation. Contributions were made on the fabrication of devices such as LEDs, lasers, high-power, high-speed electronics and III-V solar cells. This symposium proceeding provides insight into emerging trends in these exciting technologies.
