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Characterization Of Iii V Compound Semiconductor Device Materials
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Book Synopsis Characterization of III-V Compound Semiconductor Device Materials by : D. C. Reynolds
Download or read book Characterization of III-V Compound Semiconductor Device Materials written by D. C. Reynolds and published by . This book was released on 1980 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this task has been the electrical, optical, and magneto-optical characterization of the intrinsic and extrinsic properties of compound semiconductors, primarily from the III-V group of materials. Photoluminescent techniques were used to identify both the intrinsic and extrinsic properties of the materials. Intrinsic properties such as energy band gaps, effective mass parameters, refractive indices, dielectric functions, exciton binding energies and lattice vibration frequencies were determined. Extrinsic properties including activation energies of foreign impurities, binding energy of excitons to foreign impurities and the energies of complexes were established. Transport measurements were used to measure carrier mobilities and electrical conductivity as well as carrier concentrations. These measurements as a function of temperature make it possible to determine the number of donors (N sub D) and the number of acceptors (N sub A) and therefore the compensation ratio in the material. Local vibrational mode spectroscopy was used as a characterization tool to identify specific impurities such as C and Si in GaAs. From the vibrational energy the site location of the impurity can be determined. These characterization techniques have been very successful in evaluating the quality of materials and have been very helpful to the crystal growing program which has been successful in growing very high quality materials. (Author).
Book Synopsis Characterization of III-V Compound Semiconductor Device Materials by : Donald C. Reynolds
Download or read book Characterization of III-V Compound Semiconductor Device Materials written by Donald C. Reynolds and published by . This book was released on 1984 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this task has been the electrical, optical, and magneto-optical characterization of the intrinsic and extrinsic properties of compound semi-conductors, primarily from the III-V group of materials. Photoluminescent techniques were used to identify both the intrinsic and extrinsic properties of the materials. Intrinsic properties such as energy band gaps, effective mass parameters, refractive indices, dielectric functions, exciton binding energies, and lattice vibration frequencies were determined. Extrinsic properties including activation energies of foreign impurities, binding energy of excitons to foreign impurities and the energies of complexes were established. Transport measurements were used to measure carrier mobilities and electrical conductivity as well as carrier concentrations. These measurements as a function of temperature make it possible to determine the number of donors and the number of acceptors and therefore the compensation ratio in the material. Local vibrational mode spectroscopy was used as a characterization tool to identify specific impurities such as C and Si in GaAs. From the vibrational energy the site location of the impurity can be determined. These characterization techniques have been very successful in evaluating the quality of materials and have been very helpful to the crystal growing programs which has been successful in growing very high quality materials.
Book Synopsis III–V Compound Semiconductors and Devices by : Keh Yung Cheng
Download or read book III–V Compound Semiconductors and Devices written by Keh Yung Cheng and published by Springer Nature. This book was released on 2020-11-08 with total page 537 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.
Book Synopsis Characterization in Compound Semiconductor Processing by : Gary E. McGuire
Download or read book Characterization in Compound Semiconductor Processing written by Gary E. McGuire and published by Momentum Press. This book was released on 2010-01-01 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound semiconductors such as Gallium Arsenide, Gallium Aluminum Arsenide, and Indium Phosphide are often difficult to characterize and present a variety of challenges from substrate preparation, to epitaxial growth to dielectric film deposition to dopant introduction. This book reviews the common classes of compound semiconductors, their physical, optical and electrical properties and the various types of methods used for characterizing them when analyzing for defects and application problems. The book features: -- Characterization of III-V Thin Films for Electronic and Optical applications -- Characterization of Dielectric Insulating Film layers -- A Special case study on Deep Level Transient Spectroscopy on GaAs -- Concise summaries of major characterization technologies for compound semiconductor materials, including Auger Electron Spectroscopy, Ballistic Electron Emission Microscopy, Energy-Dispersive X-Ray Spectroscopy, Neutron Activation Analysis and Raman Spectroscopy
Book Synopsis Growth and Characterization of III-V Compound Semiconductor Materials for Use in Novel MODFET Structures and Related Devices by : Donald W. Schulte
Download or read book Growth and Characterization of III-V Compound Semiconductor Materials for Use in Novel MODFET Structures and Related Devices written by Donald W. Schulte and published by . This book was released on 1995 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis III-V Compound Semiconductors by : Tingkai Li
Download or read book III-V Compound Semiconductors written by Tingkai Li and published by CRC Press. This book was released on 2016-04-19 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Book Synopsis Compound Semiconductor Materials and Devices by : Zhaojun Liu
Download or read book Compound Semiconductor Materials and Devices written by Zhaojun Liu and published by Springer Nature. This book was released on 2022-06-01 with total page 65 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
Book Synopsis III-V Semiconductor Materials and Devices by : R.J. Malik
Download or read book III-V Semiconductor Materials and Devices written by R.J. Malik and published by Elsevier. This book was released on 2012-12-02 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Book Synopsis Handbook of Compound Semiconductors by : Paul H. Holloway
Download or read book Handbook of Compound Semiconductors written by Paul H. Holloway and published by Cambridge University Press. This book was released on 2008-10-19 with total page 937 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.
Book Synopsis Compound Semiconductor Bulk Materials and Characterizations by : Osamu Oda
Download or read book Compound Semiconductor Bulk Materials and Characterizations written by Osamu Oda and published by World Scientific. This book was released on 2007 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned with compound semiconductor bulk materials and has been written for students, researchers and engineers in material science and device fabrication. It offers them the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entering this field. In the first part, the book describes the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications. In the second and the third parts, the book reviews various compound semiconductor materials, including important industrial materials and the results of recent research.
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Book Synopsis Compound Semiconductor Bulk Materials And Characterizations, Volume 2 by : Osamu Oda
Download or read book Compound Semiconductor Bulk Materials And Characterizations, Volume 2 written by Osamu Oda and published by World Scientific. This book was released on 2012-10-31 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned with compound semiconductor bulk materials, and has been written for students, researchers and engineers in material science and device fabrication. It provides the elementary and intermediate knowledge of compound semiconductor bulk materials necessary for entry into this field. The first volume described the physical properties, crystal growth technologies, principles of crystal growth, various defects in crystals, characterization techniques and applications, and reviewed various III-V and II-V compound semiconductor materials. In this second volume, other materials are reviewed, including those that have recently received attention such as GaN, AlN, SiC and ZnO for optical and electronic devices.
Book Synopsis Physics and Chemistry of III-V Compound Semiconductor Interfaces by : Carl Wilmsen
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Book Synopsis Three to Five Compound Semiconductor Material Characterization of Microstructures and Nanostructures on Various Optoelectronic Devices by : Wei Zhou
Download or read book Three to Five Compound Semiconductor Material Characterization of Microstructures and Nanostructures on Various Optoelectronic Devices written by Wei Zhou and published by . This book was released on 2004 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Growth and Characterization of III-V Compound Semiconductor Materials by Metalorganic Chemical Vapor Deposition and Laser Photochemical Vapor Deposition by : Pamela Kay York
Download or read book The Growth and Characterization of III-V Compound Semiconductor Materials by Metalorganic Chemical Vapor Deposition and Laser Photochemical Vapor Deposition written by Pamela Kay York and published by . This book was released on 1990 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physical Properties of III-V Semiconductor Compounds by : Sadao Adachi
Download or read book Physical Properties of III-V Semiconductor Compounds written by Sadao Adachi and published by John Wiley & Sons. This book was released on 1992-11-10 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
