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Characterization Of Defects In 4h Sic Substrate Using Synchrotron White Beam X Ray Topography
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Book Synopsis Characterization of Defects in 4H SiC Substrate Using Synchrotron White Beam X-ray Topography by : Shreyas Krishna
Download or read book Characterization of Defects in 4H SiC Substrate Using Synchrotron White Beam X-ray Topography written by Shreyas Krishna and published by . This book was released on 2004 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers by :
Download or read book Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers written by and published by . This book was released on 2014 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Synchrotron white beam x-ray topography images show that faint needle-like surface morphological features observed on the Si-face of 4H-SiC homoepitaxial layers using Nomarski optical microscopy are associated with V shaped stacking faults in the epilayer. KOH etching of the V shaped defect reveals small oval pits connected by a shallow line which corresponding to the surface intersections of two partial dislocations and the stacking fault connecting them. Transmission electron microscopy (TEM) specimens from regions containing the V shaped defects were prepared using focused ion beam milling, and stacking sequences of (85), (50) and (63) are observed at the faulted region with high resolution TEM. In order to study the formation mechanism of V shaped defect, low dislocation density 4H-SiC substrates were chosen for epitaxial growth, and the corresponding regions before and after epitaxy growth are compared in SWBXT images. It is found that no defects in the substrate are directly associated with the formation of the V shaped defect. Simulation results of the contrast from the two partial dislocations associated with V shaped defect in synchrotron monochromatic beam x-ray topography reveals the opposite sign nature of their Burgers vectors. Therefore, a mechanism of 2D nucleation during epitaxy growth is postulated for the formation of the V shaped defect, which requires elimination of non-sequential 1/4[0001] bilayers from the original structure to create the observed faulted stacking sequence.
Book Synopsis Characterization of Growth Defects in Silicon Carbide Single Crystals by Synchrotron X-ray Topography by : Shaoping Wang
Download or read book Characterization of Growth Defects in Silicon Carbide Single Crystals by Synchrotron X-ray Topography written by Shaoping Wang and published by . This book was released on 1995 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis 26th Annual Conference of the German Crystallographic Society, March 5–8, 2018, Essen, Germany by :
Download or read book 26th Annual Conference of the German Crystallographic Society, March 5–8, 2018, Essen, Germany written by and published by Walter de Gruyter GmbH & Co KG. This book was released on 2018-03-05 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zeitschrift für Kristallographie. Supplement Volume 38 presents the complete Abstracts of all contributions to the 26th Annual Conference of the German Crystallographic Society in Essen (Germany) 2018: - Plenary Talks - Microsymposia - Poster Session Supplement Series of Zeitschrift für Kristallographie publishes Abstracts of international conferences on the interdisciplinary field of crystallography.
Book Synopsis SiC Power Materials by : Zhe Chuan Feng
Download or read book SiC Power Materials written by Zhe Chuan Feng and published by Springer Science & Business Media. This book was released on 2004-06-09 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
Book Synopsis ICCGE-19/OMVPE-19 Program and Abstracts eBook by : ICCGE-19/OMVPE-19/AACG
Download or read book ICCGE-19/OMVPE-19 Program and Abstracts eBook written by ICCGE-19/OMVPE-19/AACG and published by CTI Meeting Technology. This book was released on 2019-07-11 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt: A collection of abstracts for the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) to be held jointly with the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19) and the 17th International Summer School on Crystal Growth (ISSCG-17).
Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies 4 by : K. Shenai
Download or read book Gallium Nitride and Silicon Carbide Power Technologies 4 written by K. Shenai and published by The Electrochemical Society. This book was released on with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide and Related Materials 2015 by : Fabrizio Roccaforte
Download or read book Silicon Carbide and Related Materials 2015 written by Fabrizio Roccaforte and published by Trans Tech Publications Ltd. This book was released on 2016-05-24 with total page 1264 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects the papers from the 16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015), held in Giardini Naxos, Italy, in October 2015. During the conference, the researchers discussed issues in the field of wide bandgap semiconductors, focusing on silicon carbide, but also III-nitrides, and related materials like graphene. The major sections of the book collect papers in the area of material growth, characterization, processing, devices and related materials and technologies. The papers are grouped as follows: Chapter 1: SiC Growth Chapter 2: SiC Theory and Characterization Chapter 3: SiC Processing Chapter 4: SiC Devices
Download or read book Diffusion and Defect Data written by and published by . This book was released on 2004 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Book Synopsis Semiconductor Characterization by : W. Murray Bullis
Download or read book Semiconductor Characterization written by W. Murray Bullis and published by American Institute of Physics. This book was released on 1996 with total page 760 pages. Available in PDF, EPUB and Kindle. Book excerpt: Market: Those in government, industry, and academia interested in state-of-the-art knowledge on semiconductor characterization for research, development, and manufacturing. Based on papers given at an International Nist Workshop in January 1995, Semiconductor Characterization covers the unique characterization requirements of both silicon IC development and manufacturing, and compound semiconductor materials, devices, and manufacturing. Additional sections discuss technology trends and future requirements for compound semiconductor applications. Also highlighted are recent developments in characterization, including in- situ, in-FAB, and off-line analysis methods. The book provides a concise, effective portrayal of industry needs and problems in the important specialty of metrology for semiconductor technology.
Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers
Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2018-10-08 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
Author :American Association for Crystal Growth (AACG) Publisher :Coe Truman International, LLC ISBN 13 :1613300085 Total Pages :208 pages Book Rating :4.6/5 (133 download)
Book Synopsis ACCGE 2015 Abstracts eBook by : American Association for Crystal Growth (AACG)
Download or read book ACCGE 2015 Abstracts eBook written by American Association for Crystal Growth (AACG) and published by Coe Truman International, LLC. This book was released on 2015-07-15 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt: A collection of abstracts for the 20th American Conference on Crystal Growth and Epitaxy (ACCGE-20) and 17th U.S. Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-17) and The Second 2D Electronic Materials Symposium.
Book Synopsis Springer Handbook of Crystal Growth by : Govindhan Dhanaraj
Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Book Synopsis Defect Recognition and Image Processing in Semiconductors 1997 by : J. Doneker
Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Book Synopsis Defects in SiC Single Crystals and Their Influence on Device Performance by :
Download or read book Defects in SiC Single Crystals and Their Influence on Device Performance written by and published by . This book was released on 1998 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: This project constituted an extensive program of research aimed at applying the techniques of Synchrotron White Beam X-ray Topography (SWBXT), Nomarski Optical Microscopy, Stereo Transmission Optical Microscopy and Scanning Electron Microscopy to the detailed analysis of defect structures in SiC crystals of various polytypes, and to determine how these defect structures can influence the performance of various kinds of device manufactured therein. It has served to establish a heightened awareness of the importance of a detailed understanding of growth defect microstructure to the future of SiC technology. Results obtained in this project have helped prioritize SiC crystal quality improvements. Two kinds of defect have been identified in 6H and 4H-SiC, basal plane dislocations, and dislocations with mostly screw component lying either at a small angle, or parallel, to the c-axis, with screw component of Burgers vector being equal to nc, where c is the lattice parameter. In 6H, dislocations with b greater than or equal 2c have hollow cores, the diameters of which conform to the theory of F.C. Frank. The same is true for dislocations in 4H with b greater than equal 3c. Preliminary results show that all such dislocations (from n=1 to n>8) can modify the I-V characteristics of diodes, giving rise to higher leakage currents and premature breakdown point-failures.
Book Synopsis Defects and Diffusion in Semiconductors - An Annual Retrospective VII by : David J. Fisher
Download or read book Defects and Diffusion in Semiconductors - An Annual Retrospective VII written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2004-11-01 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: This seventh volume in the series covering the latest results in the field includes abstracts of papers which appeared between the publication of Annual Retrospective VI (Volumes 221-223) and the end of September 2004 (allowing for vagaries of journal availability).
