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Author : Kang Woo Lee
Publisher :
ISBN 13 :
Total Pages : 366 pages
Book Rating : 4.:/5 (319 download)
Download or read book Characterization, Modeling and Circuit Design of GaAs MESFET' written by Kang Woo Lee and published by . This book was released on 1984 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kang Woo Lee
Publisher :
ISBN 13 :
Total Pages : 342 pages
Book Rating : 4.:/5 (798 download)
Download or read book Characterization, Modeling and Circuit Design of GaAs Mesfet's written by Kang Woo Lee and published by . This book was released on 1984 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert Soares
Publisher : Artech House Publishers
ISBN 13 :
Total Pages : 616 pages
Book Rating : 4.:/5 (44 download)
Download or read book GaAs MESFET Circuit Design written by Robert Soares and published by Artech House Publishers. This book was released on 1988 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Aaen
Publisher : Cambridge University Press
ISBN 13 : 113946812X
Total Pages : 375 pages
Book Rating : 4.1/5 (394 download)
Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Author : John Cameron Roxby Simpson
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (66 download)
Download or read book Characterization and Modelling of GaAs MESFETs in the Design of Nonlinear Circuits written by John Cameron Roxby Simpson and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Omar Wing
Publisher : Springer Science & Business Media
ISBN 13 : 1461315417
Total Pages : 198 pages
Book Rating : 4.4/5 (613 download)
Download or read book Gallium Arsenide Digital Circuits written by Omar Wing and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.
Author : Mankoo Lee
Publisher :
ISBN 13 :
Total Pages : 260 pages
Book Rating : 4.:/5 (277 download)
Download or read book Analysis and Modeling of GaAs MESFET's for Linear Integrated Circuit Design written by Mankoo Lee and published by . This book was released on 1990 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: A complete Gallium Arsenide Metal Semiconconductor Field Effect Transistor (GaAs MESFET) model including deep-level trap effects has been developed, which is far more accurate than previous equivalent circuit models, for high-speed applications in linear integrated circuit design. A new self-backgating GaAs MESFET model, which can simulate low frequency anomalies, is presented by including deep-level trap effects which cause transconductance reduction and the output conductance and the saturation drain current to increase with the applied signal frequency. This model has been incorporated into PSPICE and includes a time dependent I-V curve model, a capacitance model, a subthreshold current model, an RC network describing the effective substrate-induced capacitance and resistance, and a switching resistance providing device symmetry. An analytical approach is used to derive capacitances which depend on Vgs and Vds and is one which also includes the channel/substrate junction modulation by the self backgating effect. A subthreshold current model is analytically derived by the mobile charge density from the parabolic potential distribution in the cut-off region. Sparameter errors between previous models and measured data in conventional GaAs MESFET's have been reduced by including a transit time delay in the transconductances, gm and gds, by the second order Bessel polynomial approximation. As a convenient extraction method, a new circuit configuration is also proposed for extracting simulated S-parameters which accurately predict measured data. Also, a large-signal GaAs MESFET model for performing nonlinear microwave circuit simulations is described. As a linear IC design vehicle for demonstrating the utility of the model, a 3-stage GaAs operational amplifier has been designed and also has been fabricated with results of a 35 dB open-loop gain at high frequencies and a 4 GHz gain bandwidth product by a conventional half micron MESFET technology. Using this new model, the low frequency anomalies of the GaAs amplifier such as a gain roll-off, a phase notch, and an output current lag are more accurately predicted than with any other previous model. This new self-backgating GaAs MESFET model, which provides accurate voltage dependent capacitances, frequency dependent output conductance, and transit time delay dependent transconductances, can be used to simulate low frequency effects in GaAs linear integrated circuit design.
Author : Pekka K. Ojala
Publisher :
ISBN 13 :
Total Pages : 200 pages
Book Rating : 4.:/5 (272 download)
Download or read book GaAs MESFET Characterization and Modeling for High Temperature Integrated Circuit Applications (25-̊400C̊) written by Pekka K. Ojala and published by . This book was released on 1991 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kai-tuan Kelvin Yan
Publisher :
ISBN 13 :
Total Pages : 208 pages
Book Rating : 4.:/5 (377 download)
Download or read book Noise Measurements, Models and Analysis in GaAs MESFETs Circuit Design written by Kai-tuan Kelvin Yan and published by . This book was released on 1996 with total page 208 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael S. Shur
Publisher : Springer Science & Business Media
ISBN 13 : 1489919899
Total Pages : 677 pages
Book Rating : 4.4/5 (899 download)
Download or read book GaAs Devices and Circuits written by Michael S. Shur and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
Download or read book Physical Modeling of GaAs MESFETs in an Integrated CAD Environment: from Device Technology to Microwave Circuit Performance written by and published by . This book was released on 1903 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The linkage between a physical device simulator for small- and large-signal characterization and CAD (computer-aided design) tools for both linear and nonlinear circuit analysis and design is considered. Efficient techniques for the physical DC and small-signal analysis of MESFETs are presented. The problem of physical simulation in a circuit environment is discussed, and it is shown how such a simulation makes possible small-signal models accounting for propagation and external parasitics. Efficient solutions for physical large-signal simulation, based on deriving large-signal equivalent circuits from small-signal analyses under different bias conditions, are proposed. The small- and large-signal characterizations allow physical simulation to be performed efficiently in a circuit environment. Examples and results are presented.
Author : Robert Anholt
Publisher : Artech House Microwave Library
ISBN 13 :
Total Pages : 338 pages
Book Rating : 4.3/5 (91 download)
Download or read book Electrical and Thermal Characterization of MESFETs, HEMTs, and HBTs written by Robert Anholt and published by Artech House Microwave Library. This book was released on 1995 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Author : Jeffrey Scott Conger
Publisher :
ISBN 13 :
Total Pages : 546 pages
Book Rating : 4.:/5 (319 download)
Download or read book Characterization, Modeling and Simulation of Compound Semiconductor Field-effect Transistors and Integrated Circuits written by Jeffrey Scott Conger and published by . This book was released on 1992 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Vincent D. Hwang
Publisher :
ISBN 13 :
Total Pages : 60 pages
Book Rating : 4.:/5 (227 download)
Download or read book Large Signal Modeling and Analysis of the GaAs MESFET. written by Vincent D. Hwang and published by . This book was released on 1986 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this work is to develop a large signal lumped circuit model of the GaAs MESFET to aid in the designs of microwave MESFET circuits. The circuit elements of this model are obtained either directly or indirectly from the DC and RF measurements of the device to be modeled. To analyze this circuit model, a nonlinear circuit simulation computer program is written. This routine is base on a hybrid time-frequency domain iterative algorithm called 'multiple reflection technique'. To improve the speed of analysis, an accelerate convergence scheme is incorporated into the multiple reflection technique for the first time to analyze three terminal device. The validity of the analysis algorithm is first checked by comparing the simulation results of a MESFET with published data. The large signal model developed is then confirmed by comparing the simulation results of a MESFET modeled in this work to the experimental results. (Author).
Author : Christopher M. Snowden
Publisher : Springer Science & Business Media
ISBN 13 : 1447110331
Total Pages : 267 pages
Book Rating : 4.4/5 (471 download)
Download or read book Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 267 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Author : David Haigh
Publisher : Institution of Electrical Engineers
ISBN 13 :
Total Pages : 488 pages
Book Rating : 4.3/5 (91 download)
Download or read book GaAs Technology and Its Impact on Circuits and Systems written by David Haigh and published by Institution of Electrical Engineers. This book was released on 1989 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book captures the essence of developments of Gallium Arsenide technology from the research laboratory to the marketplace along with the dramatic increases in complexity from early single devices to ICs of MSI complexity for both analog and digital applications.
Download or read book CAD-oriented Modeling of the Optically-controlled GaAs MESFET. written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A CAD-oriented circuit model for the optically-controlled GaAs MESFET was developed on the basis of a dedicated characterization method. By exploiting separation of direct and indirect photo-induced effects, a simple but accurate modeling of both the static and microwave characteristics of the illuminated transistor was achieved. As demonstrated by the test circuits implemented, good agreement between measured and simulated performances can thus be obtained with limited device parameter identification effort.
