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Characterization And Modeling Of Soi Rf Integrated Components
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Book Synopsis Characterization and Modeling of SOI RF Integrated Components by : Morin Dehan
Download or read book Characterization and Modeling of SOI RF Integrated Components written by Morin Dehan and published by Presses univ. de Louvain. This book was released on 2003 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive and active components fabricated in SOI technologies have been studied. Various topologies of integrated transmission lines, like Coplanar Waveguides or thin film microstrip lines, have been analyzed. Also, a new physical model of integrated inductors has been developed. This model, based on a coupled line analysis of square spiral inductors, is scalable and independent of the technology used. Inductors with various spacing between strips, conductor widths, or number of turns can be simulated on different multi-layered substrates. Each layer that composes the substrate is defined using its electrical properties (permittivity, permeability, conductivity). The performances of integrated sub-micron MOSFETs are analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) are proposed to increase the performances of a CMOS technology for for analog, low power, low voltage, and microwave applications. They are studied from Low to High frequency. The graded channel MOSFET is an asymmetric doped channel MOSFET's which bring solutions for the problems of premature drain break-down, hot carrier effects, and threshold voltage (Vth) roll-off issues in deep submicrometer devices. The GCMOS processing is fully compatible with the conventional SOI MOSFET process flow, with no additional steps needed. The dynamic threshold voltage MOS is a MOS transistor for which the gate and the body channel are tied together. All DTMOS electrical properties can be deduced from standard MOS theory by introducing Vbs = Vgs. The main advantage of DTMOS over conventional MOS is its higher drive current at low bias conditions. To keep the body to source current as low as possible, the body bias voltage must be kept lower than 0.7 V. It seems obvious that the DTMOS transistor is an attractive component for low voltage applications.
Book Synopsis Modeling and Characterization of RF and Microwave Power FETs by : Peter Aaen
Download or read book Modeling and Characterization of RF and Microwave Power FETs written by Peter Aaen and published by Cambridge University Press. This book was released on 2007-06-25 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Book Synopsis Nonlinear Device Measurement, Characterization, and Modeling for High Power RF Applications by : Youngseo Ko
Download or read book Nonlinear Device Measurement, Characterization, and Modeling for High Power RF Applications written by Youngseo Ko and published by . This book was released on 2013 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: Having characterized results under the developedmeasurement system, a new measurement based model with artificial neuron network (ANN) is finally proposed and applied to a SOI MOSFET device. The verification results demonstrate that the time-consuming measurement process can be dramatically reduced by using RTALP measurement data, and that fairly accurate large-signal RF device model can be easily extracted from these measurements using the ANN approach.
Book Synopsis Cmos Rf Modeling, Characterization And Applications by : M Jamal Deen
Download or read book Cmos Rf Modeling, Characterization And Applications written by M Jamal Deen and published by World Scientific. This book was released on 2002-04-10 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 µm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Book Synopsis CMOS RF Modeling, Characterization and Applications by : M. Jamal Deen
Download or read book CMOS RF Modeling, Characterization and Applications written by M. Jamal Deen and published by World Scientific. This book was released on 2002 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Book Synopsis Silicon Analog Components by : Badih El-Kareh
Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.
Book Synopsis Design and Characterization of Integrated Varactors for RF Applications by : Inigo Gutierrez
Download or read book Design and Characterization of Integrated Varactors for RF Applications written by Inigo Gutierrez and published by John Wiley & Sons. This book was released on 2007-04-30 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: Varactors are passive semiconductor devices used in electronic circuits, as a voltage-controlled way of storing energy in order to boost the amount of electric charge produced. In the past, the use of low-cost fabrication processes such as complementary metal oxide semiconductor (CMOS) and silicon germanium (SiGe) were kept for integrated circuits working in frequency ranges below the GHz. Now, the increased working frequency of radio frequency integrated circuits (RF ICs) for communication devices, and the trend of system-on-chip technology, has pushed the requirements of varactors to the limit. As the frequency of RF applications continues to rise, it is essential that passive devices such as varactors are of optimum quality, making this a critical design issue. Initially describing the physical phenomena that occur in passive devices within standard IC fabrication processes, Design and Characterization of Integrated Varactors for RF Applications goes on to: present information on the design of wide band electrical varactor models (up to 5 GHz) which enable the accurate prediction of device performance; propose a specific methodology for the measurement of integrated varactors, covering on-wafer measurement structures, the calibration process, and detailed descriptions of the required equipment; explain de-embedding techniques and also analyse confidence level and uncertainty linked to the test set-up; examine the design of a voltage controlled oscillator (VCO) circuit as a practical example of the employment of methods discussed in the book. Providing the reader with the necessary technical knowledge for dealing with challenging VCO designs, this book is an essential guide for practising RF and microwave engineers working on the design of electronic devices for integrated circuits. It is also a useful reference for postgraduate students and researchers interested in electronic design for RF applications.
Book Synopsis Passive RF Integrated Circuits by : Pierre Saguet
Download or read book Passive RF Integrated Circuits written by Pierre Saguet and published by Wiley-ISTE. This book was released on 2009-12-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, written by recognized experts in the field, is intended for designers of RF or microwave passive integrated circuits. It describes methods used for modeling passive circuits using the most common numerical analysis techniques (the method of moments, finite element methods, FDTD, TLM), and pays particular attention to propagation phenomena. Interconnections and packaging modeling are included, as well as an original method for multi-scale circuit modeling. Characterization and measurement methods in the time and frequency domains are the subject of two very detailed chapters. Measurement errors using Vector Network Analyzer (VNA ) and appropriate corrections are detailed and the divergences between all the various parameters S, Z, Y, h, T, ABCD are given. Time domain reflectometry and its use are also covered in detail.
Book Synopsis Tunable RF Components and Circuits by : Jeffrey L. Hilbert
Download or read book Tunable RF Components and Circuits written by Jeffrey L. Hilbert and published by CRC Press. This book was released on 2018-09-03 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt: An Industry Perspective on Key Tunable Technologies and Applications Tunable RF Components and Circuits: Applications in Mobile Handsets provides a technical introduction to the state of the art in tunable radio frequency (RF) components, circuits, and applications and discusses the foundational work that has been done to date. Leading practitioners in the field share their expertise on tunable devices in mobile handset applications. Through these practical viewpoints, readers discover how to use tunable RF techniques and devices to develop successful product designs. A substantial portion of the book focuses on antennas and antenna tuning, reflecting the dominance of the antenna tuning application in today’s commercial market for tunable RF. The book explains how RF-microelectromechanical systems (RF-MEMS), barium strontium titinate (BST), silicon-on-insulator (SOI) field effect transistors (FETs), and high-performance complementary metal oxide semiconductors (CMOS) are used as enabling technologies for tunable functions in current and next-generation radio architectures. The book also describes power amplifier envelope tracking, an emerging and important technique for improving efficiency; presents a network operator’s perspective on the evolution of the handset front end; and explores emerging approaches to production testing of wireless devices.
Book Synopsis Transistor Level Modeling for Analog/RF IC Design by : Wladyslaw Grabinski
Download or read book Transistor Level Modeling for Analog/RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Book Synopsis Characterization and Optimization of the RF Performances of Analog Components in CMOS and BiCMOs Technologies by : Snezana Jenei
Download or read book Characterization and Optimization of the RF Performances of Analog Components in CMOS and BiCMOs Technologies written by Snezana Jenei and published by . This book was released on 2003 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Design of CMOS RF Integrated Circuits and Systems by : Kiat Seng Yeo
Download or read book Design of CMOS RF Integrated Circuits and Systems written by Kiat Seng Yeo and published by World Scientific. This book was released on 2010 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future.
Book Synopsis Physical Design for 3D Integrated Circuits by : Aida Todri-Sanial
Download or read book Physical Design for 3D Integrated Circuits written by Aida Todri-Sanial and published by CRC Press. This book was released on 2017-12-19 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: Physical Design for 3D Integrated Circuits reveals how to effectively and optimally design 3D integrated circuits (ICs). It also analyzes the design tools for 3D circuits while exploiting the benefits of 3D technology. The book begins by offering an overview of physical design challenges with respect to conventional 2D circuits, and then each chapter delivers an in-depth look at a specific physical design topic. This comprehensive reference: Contains extensive coverage of the physical design of 2.5D/3D ICs and monolithic 3D ICs Supplies state-of-the-art solutions for challenges unique to 3D circuit design Features contributions from renowned experts in their respective fields Physical Design for 3D Integrated Circuits provides a single, convenient source of cutting-edge information for those pursuing 2.5D/3D technology.
Book Synopsis Noise Coupling in System-on-Chip by : Thomas Noulis
Download or read book Noise Coupling in System-on-Chip written by Thomas Noulis and published by CRC Press. This book was released on 2018-01-09 with total page 536 pages. Available in PDF, EPUB and Kindle. Book excerpt: Noise Coupling is the root-cause of the majority of Systems on Chip (SoC) product fails. The book discusses a breakthrough substrate coupling analysis flow and modelling toolset, addressing the needs of the design community. The flow provides capability to analyze noise components, propagating through the substrate, the parasitic interconnects and the package. Using this book, the reader can analyze and avoid complex noise coupling that degrades RF and mixed signal design performance, while reducing the need for conservative design practices. With chapters written by leading international experts in the field, novel methodologies are provided to identify noise coupling in silicon. It additionally features case studies that can be found in any modern CMOS SoC product for mobile communications, automotive applications and readout front ends.
Book Synopsis Industry Standard FDSOI Compact Model BSIM-IMG for IC Design by : Chenming Hu
Download or read book Industry Standard FDSOI Compact Model BSIM-IMG for IC Design written by Chenming Hu and published by Woodhead Publishing. This book was released on 2019-05-21 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model Explains the complex operation of the FDSOI device and its use of two independent control inputs Addresses the parameter extraction challenges for those using this model
Book Synopsis Integrated Inductors and Transformers by : Egidio Ragonese
Download or read book Integrated Inductors and Transformers written by Egidio Ragonese and published by CRC Press. This book was released on 2010-11-15 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the ability to improve performance, reduce fabrication costs, and increase integration levels of both RX and TX sections of the RF/mm-wave front-end, passive inductive components have experienced extraordinary growth in ICs. Therefore, a fundamental understanding of monolithic inductors and transformers has become essential for all process eng
Book Synopsis Electrical Design of Through Silicon Via by : Manho Lee
Download or read book Electrical Design of Through Silicon Via written by Manho Lee and published by Springer. This book was released on 2014-05-11 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: Through Silicon Via (TSV) is a key technology for realizing three-dimensional integrated circuits (3D ICs) for future high-performance and low-power systems with small form factors. This book covers both qualitative and quantitative approaches to give insights of modeling TSV in a various viewpoints such as signal integrity, power integrity and thermal integrity. Most of the analysis in this book includes simulations, numerical modelings and measurements for verification. The author and co-authors in each chapter have studied deep into TSV for many years and the accumulated technical know-hows and tips for related subjects are comprehensively covered.
