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Carrier Mobility In Advanced Channel Materials Using Alternative Gate Dielectrics
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Book Synopsis Carrier mobility in advanced channel materials using alternative gate dielectrics by : Eylem Durgun Özben
Download or read book Carrier mobility in advanced channel materials using alternative gate dielectrics written by Eylem Durgun Özben and published by Forschungszentrum Jülich. This book was released on 2014-03-20 with total page 123 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Carrier mobility in advanced channel materials using alternative gate dielectrics by : Eylem Durgun Özben
Download or read book Carrier mobility in advanced channel materials using alternative gate dielectrics written by Eylem Durgun Özben and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Gate Stacks for High-Mobility Semiconductors by : Athanasios Dimoulas
Download or read book Advanced Gate Stacks for High-Mobility Semiconductors written by Athanasios Dimoulas and published by Springer Science & Business Media. This book was released on 2008-01-01 with total page 397 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Book Synopsis Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS by :
Download or read book Advanced Gate Stack, Source/drain and Channel Engineering for Si-based CMOS written by and published by . This book was released on 2005 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High-k Gate Dielectric Materials by : Niladri Pratap Maity
Download or read book High-k Gate Dielectric Materials written by Niladri Pratap Maity and published by CRC Press. This book was released on 2020-12-18 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume explores and addresses the challenges of high-k gate dielectric materials, one of the major concerns in the evolving semiconductor industry and the International Technology Roadmap for Semiconductors (ITRS). The application of high-k gate dielectric materials is a promising strategy that allows further miniaturization of microelectronic components. This book presents a broad review of SiO2 materials, including a brief historical note of Moore’s law, followed by reliability issues of the SiO2 based MOS transistor. It goes on to discuss the transition of gate dielectrics with an EOT ~ 1 nm and a selection of high-k materials. A review of the various deposition techniques of different high-k films is also discussed. High-k dielectrics theories (quantum tunneling effects and interface engineering theory) and applications of different novel MOSFET structures, like tunneling FET, are also covered in this book. The volume also looks at the important issues in the future of CMOS technology and presents an analysis of interface charge densities with the high-k material tantalum pentoxide. The issue of CMOS VLSI technology with the high-k gate dielectric materials is covered as is the advanced MOSFET structure, with its working structure and modeling. This timely volume will prove to be a valuable resource on both the fundamentals and the successful integration of high-k dielectric materials in future IC technology.
Book Synopsis Advanced Nanoelectronics by : Razali Ismail
Download or read book Advanced Nanoelectronics written by Razali Ismail and published by CRC Press. This book was released on 2018-09-03 with total page 459 pages. Available in PDF, EPUB and Kindle. Book excerpt: While theories based on classical physics have been very successful in helping experimentalists design microelectronic devices, new approaches based on quantum mechanics are required to accurately model nanoscale transistors and to predict their characteristics even before they are fabricated. Advanced Nanoelectronics provides research information on advanced nanoelectronics concepts, with a focus on modeling and simulation. Featuring contributions by researchers actively engaged in nanoelectronics research, it develops and applies analytical formulations to investigate nanoscale devices. The book begins by introducing the basic ideas related to quantum theory that are needed to better understand nanoscale structures found in nanoelectronics, including graphenes, carbon nanotubes, and quantum wells, dots, and wires. It goes on to highlight some of the key concepts required to understand nanotransistors. These concepts are then applied to the carbon nanotube field effect transistor (CNTFET). Several chapters cover graphene, an unzipped form of CNT that is the recently discovered allotrope of carbon that has gained a tremendous amount of scientific and technological interest. The book discusses the development of the graphene nanoribbon field effect transistor (GNRFET) and its use as a possible replacement to overcome the CNT chirality challenge. It also examines silicon nanowire (SiNW) as a new candidate for achieving the downscaling of devices. The text describes the modeling and fabrication of SiNW, including a new top-down fabrication technique. Strained technology, which changes the properties of device materials rather than changing the device geometry, is also discussed. The book ends with a look at the technical and economic challenges that face the commercialization of nanoelectronics and what universities, industries, and government can do to lower the barriers. A useful resource for professionals, researchers, and scientists, this work brings together state-of-the-art technical and scientific information on important topics in advanced nanoelectronics.
Book Synopsis Advanced Gate Stack Materials and Processes for Sub-100 Nm CMOS Applcations by : Qiang Lu
Download or read book Advanced Gate Stack Materials and Processes for Sub-100 Nm CMOS Applcations written by Qiang Lu and published by . This book was released on 2002 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scaling And Integration Of High-speed Electronics And Optomechanical Systems by : Magnus Willander
Download or read book Scaling And Integration Of High-speed Electronics And Optomechanical Systems written by Magnus Willander and published by World Scientific. This book was released on 2017-04-17 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development.In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems.
Book Synopsis High-Performance AD and DA Converters, IC Design in Scaled Technologies, and Time-Domain Signal Processing by : Pieter Harpe
Download or read book High-Performance AD and DA Converters, IC Design in Scaled Technologies, and Time-Domain Signal Processing written by Pieter Harpe and published by Springer. This book was released on 2014-07-23 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on the 18 tutorials presented during the 23rd workshop on Advances in Analog Circuit Design. Expert designers present readers with information about a variety of topics at the frontier of analog circuit design, serving as a valuable reference to the state-of-the-art, for anyone involved in analog circuit research and development.
Book Synopsis Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10 by : R. Ekwal Sah
Download or read book Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10 written by R. Ekwal Sah and published by The Electrochemical Society. This book was released on 2009 with total page 871 pages. Available in PDF, EPUB and Kindle. Book excerpt: The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.
Book Synopsis Materials Fundamentals of Gate Dielectrics by : Alexander A. Demkov
Download or read book Materials Fundamentals of Gate Dielectrics written by Alexander A. Demkov and published by Springer Science & Business Media. This book was released on 2006-05-24 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
Book Synopsis Atomic Layer Deposition Applications 4 by : Ana Londergan
Download or read book Atomic Layer Deposition Applications 4 written by Ana Londergan and published by The Electrochemical Society. This book was released on 2008 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the symposium focus. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topography, with controlled composition and properties. This issue of the ECS Transactions contains peer reviewed papers presented at the symposium. Breadths of ALD Applications are featured: novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics and a variety of other emerging applications.
Book Synopsis Gate-stack and Channel Engineering for Advanced CMOS Technology by : Yee-Chia Yeo
Download or read book Gate-stack and Channel Engineering for Advanced CMOS Technology written by Yee-Chia Yeo and published by . This book was released on 2002 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Compounds—Advances in Research and Application: 2013 Edition by :
Download or read book Silicon Compounds—Advances in Research and Application: 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-06-21 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Compounds—Advances in Research and Application: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Silanes. The editors have built Silicon Compounds—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Silanes in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Silicon Compounds—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Book Synopsis Defects in HIgh-k Gate Dielectric Stacks by : Evgeni Gusev
Download or read book Defects in HIgh-k Gate Dielectric Stacks written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2006-01-27 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
Book Synopsis Chemical Processes—Advances in Research and Application: 2013 Edition by :
Download or read book Chemical Processes—Advances in Research and Application: 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-06-21 with total page 957 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical Processes—Advances in Research and Application: 2013 Edition is a ScholarlyBrief™ that delivers timely, authoritative, comprehensive, and specialized information about ZZZAdditional Research in a concise format. The editors have built Chemical Processes—Advances in Research and Application: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about ZZZAdditional Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Chemical Processes—Advances in Research and Application: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.
Author :Electrochemical society. Meeting Publisher :The Electrochemical Society ISBN 13 :1566777925 Total Pages :588 pages Book Rating :4.5/5 (667 download)
Book Synopsis Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing by : Electrochemical society. Meeting
Download or read book Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing written by Electrochemical society. Meeting and published by The Electrochemical Society. This book was released on 2010 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt:
