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Caracterisation Et Modelisation Petit Signal Et En Bruit Des Transistors Bipolaires A Heterojonction Aux Frequences Micro Ondes
Download Caracterisation Et Modelisation Petit Signal Et En Bruit Des Transistors Bipolaires A Heterojonction Aux Frequences Micro Ondes full books in PDF, epub, and Kindle. Read online Caracterisation Et Modelisation Petit Signal Et En Bruit Des Transistors Bipolaires A Heterojonction Aux Frequences Micro Ondes ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications by : Niccolò Rinaldi
Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by CRC Press. This book was released on 2022-09-01 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
Book Synopsis Analysis and Simulation of Heterostructure Devices by : Vassil Palankovski
Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Book Synopsis Fiabilité des Transistors Bipolaires à Hétérojonction sur substrat InP by : JEAN-CHRISTOPHE MARTIN
Download or read book Fiabilité des Transistors Bipolaires à Hétérojonction sur substrat InP written by JEAN-CHRISTOPHE MARTIN and published by . This book was released on 2010-07 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Compehensive Nonlinear Modelling of Dispersive Heterstructure Field Effect Transistors and their MMIC Applications by : Ingmar Kallfass
Download or read book Compehensive Nonlinear Modelling of Dispersive Heterstructure Field Effect Transistors and their MMIC Applications written by Ingmar Kallfass and published by Cuvillier Verlag. This book was released on 2006-06-28 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: A custom HFET model was developed and applied in the design of several MMIC applica- tions. The model is expressly dedicated to microwave circuit design. Its analytical nonlinear equations provide a compromise between physical interpretability, numerical efficiency and global validity. As an essential part of the overall model, the COBRA expression features a highly efficient and accurate description of complex HFET drain current characteristics. A modification was introduced to include the reduction of drain current due to the self-heating effect as well as for improved description of gain compression. A new approach to frequency dispersion modelling extends the model’s validity range from the microwave- down to the low-frequency and DC regimes. The proposed dispersion model relies on conventional device characterisation techniques and standard parameter ex- traction procedures. The inclusion of multiple dispersion time constants and exponentially decaying step responses accurately reflects the physical nature of individual dispersion ef- fects, providing a correct description of transitions between dispersion regimes both in the time- and frequency domain. As a consequence, the model allows for accurate assessment of dynamic (gain, matching, intermodulation etc.), static (e.g. biasing, power consumption) as well as combined (e.g. PAE, self-biasing) figures of merit during the design phase. Addition- ally, the simulation error introduced by neglecting frequency dispersion when using purely static or dynamic drain current models, can be evaluated. A unified capacitance model approach defines the frame for sets of charge-conservative expressions for gate capacitance characteristics. The final equations employed here resemble in composition the Curtice IV model, e.g. in terms of transition from linear- to saturated- and from sub-threshold- to active voltage regimes. The universal validity of the model was demonstrated by applying it to several different HEMT technologies, encompassing both state-of-the-art GaAs pHEMT low-noise and power processes, high-frequency InP pHEMTs as well as novel concepts such as the strained-Si/SiGe mHEMT. Both the nonlinear capacitance and dispersion models proved to apply very well to all HEMT technologies.
