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Caracterisation Et Modelisation Electrique Non Lineaire Du Transistor Bipolaire A Heterojonction Gaaias Gaas
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Book Synopsis Caractérisation et modélisation électrique non-linéaire du transistor bipolaire à hétérojonction GaAIAs-GaAs by : Jean-Marc Dienot
Download or read book Caractérisation et modélisation électrique non-linéaire du transistor bipolaire à hétérojonction GaAIAs-GaAs written by Jean-Marc Dienot and published by . This book was released on 1994 with total page 175 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Caractérisation et modélisation électrique non-linéaire du transistor bipolaire à hétérojonction GaAlAs/GaAs. Application à la conception d'un oscillateur microondes contrôlé en tension by : Jean-Marc Diénot
Download or read book Caractérisation et modélisation électrique non-linéaire du transistor bipolaire à hétérojonction GaAlAs/GaAs. Application à la conception d'un oscillateur microondes contrôlé en tension written by Jean-Marc Diénot and published by . This book was released on 1994 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: CE MEMOIRE CONSTITUE UNE CONTRIBUTION A LA CARACTERISATION ET LA MODELISATION FORT SIGNAL DU TRANSISTOR BIPOLAIRE A HETEROJONCTION SUR ARSENIURE DE GALLIUM (TBH GAALAS/GAAS), COMPOSANT POTENTIEL POUR LES APPLICATIONS MICROONDES ACTUELLES ET FUTURES. DANS UNE PREMIERE PARTIE, NOUS RAPPELONS LES DIFFERENTS MODELES ELECTRIQUES NON-LINEAIRES DU TRANSISTOR BIPOLAIRE, CE QUI NOUS PERMET DE PROPOSER UN MODELE SIMILAIRE POUR LE TBH, BASE SUR UNE ANALYSE DE SON COMPORTEMENT ELECTRIQUE. LA DEUXIEME PARTIE DECRIT LES METHODES DE CARACTERISATIONS ELECTRIQUES SPECIFIQUES AU TBH DANS LES DIFFERENTS REGIMES DE FONCTIONNEMENT STATIQUE ET DYNAMIQUE. NOUS AVONS ETE AMENES A DEVELOPPER UNE CARACTERISATION EN REGIME IMPULSIONNEL POUR S'AFFRANCHIR DES EFFETS THERMIQUES, QUI SONT CRITIQUES DANS CES STRUCTURES A BASE DE GAAS. LA MISE EN UVRE D'UN BANC AUTOMATISE REALISANT CETTE OPERATION AUTORISE UNE CARACTERISATION NON LINEAIRE APPROPRIEE DU TBH. ASSOCIEE A UNE METHODOLOGIE D'EXTRACTION DES PARAMETRES, ELLE PERMET D'ABOUTIR A UN MODELE PRECIS DE CE COMPOSANT. LA DERNIERE PARTIE PERMET DE VALIDER L'ENSEMBLE DE LA PROCEDURE MODELISATION-CARACTERISATION PAR UNE COMPARAISON SIMULATIONS-MESURES DU TBH EN REGIME FAIBLE ET FORT NIVEAUX. CE MODELE EST ALORS UTILISE LORS DE LA CONCEPTION D'UN OSCILLATEUR ACCORDABLE ELECTRONIQUEMENT (VCO) A LA FREQUENCE DE 1.8 GHZ, ET PERMET DE PRESENTER LES PERFORMANCES OBTENUES EN SIMULATION A PARTIR DE CE CIRCUIT
Book Synopsis MODELISATION NON LINEAIRE DES TRANSISTORS BIPOLAIRES A HETEROJONCTION POUR LA CONCEPTION DES CIRCUITS MICRO-ONDES. METHODES DE CARACTERISATION ASSOCIEES AU MODELE by : AHMED.. BIRAFANE
Download or read book MODELISATION NON LINEAIRE DES TRANSISTORS BIPOLAIRES A HETEROJONCTION POUR LA CONCEPTION DES CIRCUITS MICRO-ONDES. METHODES DE CARACTERISATION ASSOCIEES AU MODELE written by AHMED.. BIRAFANE and published by . This book was released on 1997 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: AU COURS DE CE TRAVAIL NOUS AVONS DEVELOPPE UN MODELE NON LINEAIRE DU TBH POUR LA CONCEPTION DES CIRCUITS MICRO-ONDES, AINSI QUE DES PROCEDURES DE CARACTERISATION ASSOCIEES A CE MODELE. LE MODELE TIEN COMPTE DES PROPRIETES PHYSIQUES PROPRES AU TBH ET DE L'AUTO ECHAUFFEMENT DU TRANSISTOR. LA PRISE EN COMPTE DE L'AUTO ECHAUFFEMENT DU TRANSISTOR CONSTITUE UNE ORIGINALITE DE CE TRAVAIL. LE TRANSISTOR EST DECRIT PAR UN MODELE ELECTROTHERMIQUE, CONSTITUE D'UN MODELE ELECTRIQUE ET D'UN MODELE THERMIQUE AVEC INTERACTION ENTRE LES DEUX MODELES. LA TEMPERATURE QUI N'EST PLUS CONSTANTE DURANT LA SIMULATION COMME C'EST LE CAS DES MODELES IMPLANTES DANS LES SIMULATEURS STANDARDS, CONSTITUE UNE ELECTRODE DE COMMANDE DU TRANSISTOR AU MEME TITRE QUE LES ELECTRODES DE BASE, DE COLLECTEUR ET D'EMETTEUR. UNE METHODOLOGIE DE CARACTERISATION NON LINEAIRE PERMETTANT DE DETERMINER L'ENSEMBLE DES PARAMETRES STATIQUES DU MODELE ELECTRIQUE A ETE DEVELOPPEE. D'AUTRE PART NOUS AVONS PROPOSE UNE NOUVELLE METHODE D'EXTRACTION QUI PERMET D'OBTENIR DIRECTEMENT L'ENSEMBLE DES PARAMETRES ELECTRIQUES DU CIRCUIT LINEAIRE EQUIVALENT DU TBH SANS AUCUNE OPTIMISATION. DE PLUS ELLE NE NECESSITE AUCUNE INFORMATION GEOMETRIQUE NI TECHNOLOGIQUE CONCERNANT LE TRANSISTOR. CETTE METHODE EST BASEE SUR DES EQUATIONS PUREMENT ANALYTIQUES QUI EXPRIMENT LES PARAMETRES Z DU TRANSISTOR EN FONCTION DES PARAMETRES ELECTRIQUES DU CIRCUIT LINEAIRE EQUIVALENT UTILISE. LA VALIDATION DE LA METHODE EST EFFECTUEE SUR DEUX TRANSISTORS GAINP/GAAS DE FREQUENCE DE COUPURES DIFFERENTES 20 GHZ ET 80 GHZ. LE MODELE NON LINEAIRE EST VALIDE EN REGIME STATIQUE ET EN REGIME DYNAMIQUE PETITS SIGNAUX ET FORTS SIGNAUX, UN EXCELLENT ACCORD EST OBTENU ENTRE LA MESURE ET LA SIMULATION.
Book Synopsis Caractérisation du transistor bipolaire à hétérojonction GaAlAs/GaAs en vue de son utilisation en amplification hyperfréquence de puissance by : Laurent Andrieux
Download or read book Caractérisation du transistor bipolaire à hétérojonction GaAlAs/GaAs en vue de son utilisation en amplification hyperfréquence de puissance written by Laurent Andrieux and published by . This book was released on 1995 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: LE TRANSISTOR BIPOLAIRE A HETEROJONCTION GAALAS/GAAS PRESENTE DES POTENTIALITES INTERESSANTES DANS LE DOMAINE DE L'AMPLIFICATION HYPERFREQUENCE DE PUISSANCE. CE MEMOIRE CONSTITUE UNE CONTRIBUTION A SA CARACTERISATION ET SA MODELISATION FORT SIGNAL POUR CE TYPE D'APPLICATION. DANS UNE PREMIERE PARTIE, NOUS PRESENTONS UN MODELE ELECTROTHERMIQUE PHYSIQUE NON LINEAIRE, IMPLANTE DANS LES LOGICIELS ESACAP ET HP/MDS. LA TEMPERATURE DU COMPOSANT EST MODELISE AU MOYEN D'UNE CELLULE THERMIQUE CONNEXE AU MODELE. DANS UN DEUXIEME TEMPS, LA CARACTERISATION I(V) NOUS A PERMIS D'EXTRAIRE LES VALEURS DES ELEMENTS LINEAIRES ET NON LINEAIRES DEFINISSANT LE MODELE. NOUS AVONS EGALEMENT ESTIME LA RESISTANCE THERMIQUE A UNE CONSTANTE. LES PERFORMANCES FREQUENTIELLES PETIT SIGNAL FONT ETAT D'UNE FREQUENCE DE TRANSITION DE 20 GHZ ET MAXIMALE D'OSCILLATION DE 15 GHZ. LES CONFRONTATIONS THEORIE-EXPERIENCE NOUS ONT PERMIS, POUR CES REGIMES DE FONCTIONNEMENT, DE VALIDER LE MODELE ETABLI, ET D'EVALUER L'INFLUENCE DE L'AUTO-ECHAUFFEMENT DU TRANSISTOR SUR SES PERFORMANCES STATIQUES ET DYNAMIQUES. LA DERNIERE PARTIE A CONSISTE A CARACTERISER NOS COMPOSANTS DANS UN AMPLIFICATEUR DISCRET: GAIN EN PUISSANCE, PUISSANCE DE SORTIE ET RENDEMENT EN PUISSANCE AJOUTEE, ONT ETE ETUDIES. NOUS MONTRONS QUE L'ADAPTATION DEFINIE EN REGIME LINEAIRE S'AVERE INSUFFISANTE POUR ATTEINDRE DE FORTES PUISSANCES DE SORTIE ET PRESENTONS UNE METHODE PERMETTANT D'OPTIMISER LES IMPEDANCES A PRESENTER. A 2 GHZ, ET POUR UNE POLARISATION EN CLASSE AB, UN GAIN DE PUISSANCE DE 12 DB, ASSOCIE A UNE PUISSANCE DE SORTIE MAXIMALE DE 630 MW ET UN RENDEMENT DE 60% ONT ETE OBTENUS. POUR TOUS LES CAS ETUDIES, LES SIMULATIONS VALIDENT NOTRE MODELE EN REGIME DE FORTS SIGNAUX. ENFIN, DES CONCLUSIONS SONT FAITES QUANT AUX POSSIBILITES PRATIQUES D'OPTIMISATION DE NOS STRUCTURES POUR L'OBTENTION DE PERFORMANCES ENCORE SUPERIEURES
Book Synopsis Silicon Photonics by : Lorenzo Pavesi
Download or read book Silicon Photonics written by Lorenzo Pavesi and published by Springer Science & Business Media. This book was released on 2004-03-04 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a fascinating picture of the state-of-the-art in silicon photonics and a perspective on what can be expected in the near future. It is composed of a selected number of reviews authored by world leaders in the field and is written from both academic and industrial viewpoints. An in-depth discussion of the route towards fully integrated silicon photonics is presented. This book will be useful not only to physicists, chemists, materials scientists, and engineers but also to graduate students who are interested in the fields of microphotonics and optoelectronics.
Book Synopsis Integrated Optics: Theory and Technology by : Robert G. Hunsperger
Download or read book Integrated Optics: Theory and Technology written by Robert G. Hunsperger and published by Springer. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Our intent in producing this book was to provide a text that would be comprehensive enough for an introductory course in integrated optics, yet concise enough in its mathematical derivations to be easily readable by a practicing engineer who desires an overview of the field. The response to the first edition has indeed been gratifying; unusually strong demand has caused it to be sold out during the initial year of publication, thus providing us with an early opportunity to produce this updated and improved second edition. This development is fortunate, because integrated optics is a very rapidly progressing field, with significant new research being regularly reported. Hence, a new chapter (Chap. 17) has been added to review recent progress and to provide numerous additional references to the relevant technical literature. Also, thirty-five new problems for practice have been included to supplement those at the ends of chapters in the first edition. Chapters I through 16 are essentially unchanged, except for brief updating revisions and corrections of typographical errors. Because of the time limitations imposed by the need to provide an uninterrupted supply of this book to those using it as a course text, it has been possible to include new references and to briefly describe recent developments only in Chapter 17. However, we hope to provide details of this continuing progress in a future edition.
Book Synopsis An Introduction to Optics in Computers by : Henri H. Arsenault
Download or read book An Introduction to Optics in Computers written by Henri H. Arsenault and published by SPIE Press. This book was released on 1992 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume surveys the entire field of optical computing. The emphasis is on breadth of coverage. The book is descriptive, the authors minimize the use of mathematics, and it is therefore most suitable for those who require an overall view of what is going on in this field. A detailed comparison is given of the capabilities of electronics and optics, and the degree to which these capabilities have been achieved is indicated. Other areas of focus include optical computing architectures, components and technologies, optical interconnects, and optical neural nets. Approximately 300 references to key works in the field are included.
Book Synopsis Integrated Photonics by : Ginés Lifante
Download or read book Integrated Photonics written by Ginés Lifante and published by Information Gatekeepers Inc. This book was released on 2003 with total page 50 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structure and Optical Properties of Semiconductors by : Marvin L. Cohen
Download or read book Electronic Structure and Optical Properties of Semiconductors written by Marvin L. Cohen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamentals of Optical Waveguides by : Katsunari Okamoto
Download or read book Fundamentals of Optical Waveguides written by Katsunari Okamoto and published by Elsevier. This book was released on 2010-08-04 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Optical Waveguides is an essential resource for any researcher, professional or student involved in optics and communications engineering. Any reader interested in designing or actively working with optical devices must have a firm grasp of the principles of lightwave propagation. Katsunari Okamoto has presented this difficult technology clearly and concisely with several illustrations and equations. Optical theory encompassed in this reference includes coupled mode theory, nonlinear optical effects, finite element method, beam propagation method, staircase concatenation method, along with several central theorems and formulas. Since the publication of the well-received first edition of this book, planar lightwave circuits and photonic crystal fibers have fully matured. With this second edition the advances of these fibers along with other improvements on existing optical technologies are completely detailed. This comprehensive volume enables readers to fully analyze, design and simulate optical atmospheres. Exceptional new chapter on Arrayed-Waveguide Grating (AWG) In-depth discussion of Photonic Crystal Fibers (PCFs) Thorough explanation of Multimode Interference Devices (MMI) Full coverage of polarization Mode Dispersion (PMD)
Book Synopsis Strained Ge and GeSn Band Engineering for Si Photonic Integrated Circuits by : Yijie Huo
Download or read book Strained Ge and GeSn Band Engineering for Si Photonic Integrated Circuits written by Yijie Huo and published by Stanford University. This book was released on 2010 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: The on-chip interconnect bandwidth limitation is becoming an increasingly critical challenge for integrated circuits (ICs) as device scaling continues to push the speed and density of ICs. Silicon photonics has the ability to solve this emerging problem due to its high speed, high bandwidth, low power consumption, and ability to be monolithically integrated on silicon. Most of the key devices for Si photonic ICs have already been demonstrated. However, a practical CMOS compatible coherent light source is still a major challenge. Germanium (Ge) has already been demonstrated to be a promising material for optoelectronic devices, such as photo-detectors and modulators. However, Ge is an indirect band gap semiconductor, which makes Ge-based light sources very inefficient and limits their practical use. Fortunately, the direct [uppercase Gamma] valley of the Ge conduction band is only 0.14 eV higher than the indirect L valley, suggesting that with band-structure engineering, Ge has the potential to become a direct band gap material and an efficient light emitter. In this dissertation, we first discuss our work on highly biaxial tensile strained Ge grown by molecular beam epitaxy (MBE). Relaxed step-graded InGaAs buffer layers, which are prepared with low temperature growth and high temperature annealing, are used to provide a larger lattice constant substrate to produce tensile strain in Ge epitaxial layers. Up to 2.3% in-plane biaxial tensile strained thin Ge epitaxial layers were achieved with smooth surfaces and low threading dislocation density. A strong increase of photoluminescence with highly tensile strained Ge layers at low temperature suggests that a direct band gap semiconductor has been achieved. This dissertation also presents our work on more than 9% Sn incorporation in epitaxial GeSn alloys using a low temperature MBE growth method. This amount of Sn is 10 times greater than the solid-solubility of Sn in crystalline Ge. Material characterization shows good crystalline quality without Sn precipitation or phase segregation. With increasing Sn percentage, direct band gap narrowing is observed by optical transmission measurements. The studies described in this dissertation will help enable efficient germanium based CMOS compatible coherent light sources. Other possible applications of this work are also discussed in the concluding chapter.
Book Synopsis Band Theory and Electronic Properties of Solids by : John Singleton
Download or read book Band Theory and Electronic Properties of Solids written by John Singleton and published by OUP Oxford. This book was released on 2001-08-30 with total page 239 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an introduction to band theory and the electronic properties of materials at a level suitable for final-year undergraduates or first-year graduate students. It sets out to provide the vocabulary and quantum-mechanical training necessary to understand the electronic, optical and structural properties of the materials met in science and technology and describes some of the experimental techniques which are used to study band structure today. In order to leave space for recent developments, the Drude model and the introduction of quantum statistics are treated synoptically. However, Bloch's theorem and two tractable limits, a very weak periodic potential and the tight-binding model, are developed rigorously and in three dimensions. Having introduced the ideas of bands, effective masses and holes, semiconductor and metals are treated in some detail, along with the newer ideas of artificial structures such as super-lattices and quantum wells, layered organic substances and oxides. Some recent `hot topics' in research are covered, e.g. the fractional Quantum Hall Effect and nano-devices, which can be understood using the techniques developed in the book. In illustrating examples of e.g. the de Haas-van Alphen effect, the book focuses on recent experimental data, showing that the field is a vibrant and exciting one. References to many recent review articles are provided, so that the student can conduct research into a chosen topic at a deeper level. Several appendices treating topics such as phonons and crystal structure make the book self-contained introduction to the fundamentals of band theory and electronic properties in condensed matter physic today.
