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Author : James J. O'Shea
Publisher :
ISBN 13 :
Total Pages : 270 pages
Book Rating : 4.:/5 (39 download)
Download or read book Ballistic Electron Emission Microscopy Studies of Semiconductor Heterostructures written by James J. O'Shea and published by . This book was released on 1997 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ceceli A. Duchi
Publisher :
ISBN 13 :
Total Pages : 47 pages
Book Rating : 4.:/5 (392 download)
Download or read book Ballistic Electron Emission Microscopy Studies of ErAs/GaAs Laterally Varying Heterostructures written by Ceceli A. Duchi and published by . This book was released on 1997 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (946 download)
Download or read book Ballistic Electron Emission Spectroscopy Study of Transport Through Semiconductor Quantum Wells and Quantum Dots written by and published by . This book was released on 1997 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report summarizes the development and use of Ballistic Electron Emission Microscopy (BEEM) for nondestructive, local characterization of semiconductor heterostructures under AFOSR grant No. F49620-94-1-0378. The technique has been applied for measuring heterojunction band offsets, for studying band structure effects in electron tunneling through double barrier resonant tunneling structures, and for imaging current flow through buried mesoscopic structures such as quantum dots (approx. 10nm in size) and misfit dislocations 80nm below the surface. Monte Carlo simulations of the transport have also been performed. The results suggest that BEEM is a powerful new low energy electron microscopy for materials physics study on the nm scale.
Author : Mario Prietsch
Publisher :
ISBN 13 :
Total Pages : 69 pages
Book Rating : 4.:/5 (15 download)
Download or read book Ballistic-electron emission microscopy (BEEM) written by Mario Prietsch and published by . This book was released on 1995 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 44 pages
Book Rating : 4.:/5 (227 download)
Download or read book BEEM 94. Annual Workshop on Ballistic Electron Emission Microscopy (5th) Held in New York on January 24, 1994 written by and published by . This book was released on 1994 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: Partial contents: Electron transport across interfaces and surfaces: an overview; BEEM studies of strain-tuned semiconductor interfaces; Transport studies in semiconductor heterostructures using BEEM; Spectroscopic studies of quantum-wells and -wires using an STM; BEEM in pinholes of NiS2 films on n- Si(111)-7x7: determination of the impact ionization quantum yield in Si; Low- temperature UHV BEEM of epitaxial CoSi2/Si(111); Interfacial barrier studies of epitaxial CoGa on n-type (100) GaAs with BEEM; BEEM on Au/Si(111)7x7 and Au/ CaF2/Si(111)7x7; Temperature dependence of Schottky barriers as probed by BEEM; Nanoscopic barrier height distributions at metal/semiconductor interfaces and observation of critical lengths; BEEM studies of reversed-biased Schottky diodes; Ballistic models applied to low-temperature BEEM measurements of Au/Si interfaces; Electron inelastic mean free path and spatial resolution of BEEM.
Author : Soner Özcan
Publisher :
ISBN 13 : 9783838100326
Total Pages : 132 pages
Book Rating : 4.1/5 (3 download)
Download or read book Ballistic Electron Transport Through Organic Semiconductors written by Soner Özcan and published by . This book was released on 2008-10-01 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the framework of this thesis Ballistic Electron Emission Microscopy/ Spectroscopy (BEEM/S) was used to investigate semiconductor heterostructures. Including organic semiconductors like titanylphthalocyanine (TiOPc) and hexa-peri hexabenzocoronene (HBe. Analyzing the BEEM spectra we find that the TiOPc increases the BEEM threshold voltage compared to reference Au/GaAs diodes. The energy dependent electron transmission properties of TiOPc were investigated too. Additionally, an approach for the determination of the attenuation length of TiOPc as a function of energy has been successfully introduced. Finally, the Schottky barrier heights of Au/HBC/GaAs heterostructures were investigated by BEEM. The high barrier at the HBiGaAs interface makes this material a promising interfacial layer for increasing the open circuit voltage of GaAs Schottky barrier solar cells.
Author : Francesca Diane Pardo
Publisher :
ISBN 13 :
Total Pages : 344 pages
Book Rating : 4.E/5 ( download)
Download or read book Ballistic Electron Emission Microscopy Studies of Lateral Variation in Schottky Barrier Height written by Francesca Diane Pardo and published by . This book was released on 1998 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this dissertation, three experiments are discussed. The first BEEM (Ballistic Electron Emission Microscopy) characterization of an InAlAs Schottky barrier, an investigation into the possibility of field pinch-off in Au/GaAs samples, and the first demonstration of BEEM on a cleaved multilayer cross-section. Covers results for BEEM research, focusing on BEEM resolution and noise analysis.
Author : Angela D. Davies
Publisher :
ISBN 13 :
Total Pages : 562 pages
Book Rating : 4.E/5 ( download)
Download or read book Ballistic-electron-emission Microscopy of Silicon-based Schottky Systems written by Angela D. Davies and published by . This book was released on 1994 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David Allen Pearson
Publisher :
ISBN 13 :
Total Pages : 934 pages
Book Rating : 4.:/5 (318 download)
Download or read book Theory of Ballistic Electron Emission Microscopy written by David Allen Pearson and published by . This book was released on 1999 with total page 934 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Angela Elizabeth Fowell
Publisher :
ISBN 13 :
Total Pages : 308 pages
Book Rating : 4.:/5 (896 download)
Download or read book Ballistic Electron Emission Microscopy of Semiconductor Interfaces written by Angela Elizabeth Fowell and published by . This book was released on 1991 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 23 pages
Book Rating : 4.:/5 (946 download)
Download or read book Ballistic Electron Emission Microscopy Study of Novel Quantum Objects and Electronic Defects written by and published by . This book was released on 2000 with total page 23 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the approximately 2 1/2 year period of the above AFOSR grant, substantial progress has been made in the further development of Ballistic Electron Emission Microscopy (BEEM) as a quantitative microscopic and spectroscopic tool for the characterization of buried quantum objects and electronic defects in semiconductors. During the period of this grant, we have done the following: Developed a theoretical model for the simulation of BEEM spectra. The model is compared with the experimentally obtained Second Derivative (SD) spectra for the prototypical case of Al(x)Ga(1-x)As/GaAs heterostructures. Quantitative numerical agreement is obtained. ii. We have extended the modeling with Monte Carlo simulations to get detailed understanding of BEEM spectra as a function of depth below the surface. iii. BEEM has been used for several spectroscopic studies on novel materials systems. These include observation of the splitting of the L band in GaInP due to ordering. the "local" conduction band offset of GaSb quantum
Author : Cristian Alexandru Tivarus
Publisher :
ISBN 13 :
Total Pages : 233 pages
Book Rating : 4.:/5 (71 download)
Download or read book Schottky Barrier Formation at Metal-quantum Well Interfaces Studied with Ballistic Electron Emission Microscopy written by Cristian Alexandru Tivarus and published by . This book was released on 2005 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: A number of possible near and long term semiconductor device technologies rely on abrupt metal-semiconductor interfaces with nm-dimensions, and with internal nm-scale inhomogeneity. It is therefore very important to be able probe the electronic properties of these buried interfaces with sub-10 nm resolution and to find out the impact of small-size effects on their transport properties. In our study we used Ballistic Electron Emission Microscopy (BEEM) and finite-element electrostatic modeling to quantify how small-size effects modify the energy barrier at metal/semiconductor quantum wells (QWs), formed by making Schottky contacts to cleaved edges of GaAs quantum wells. Our model semiconductor heterostructure is formed as a sequence of AlGaAs/GaAs/AlGaAs layers and contains a sequence of GaAs QWs with thickness between 1 and 15 nm. The Schottky barrier height (SBH) measurements as a function of QW thickness showed that the SBH value increases as the QW thickness is decreased, by up to 140 meV for a 1 nm thick QW. This is mostly due to a large quantum-confinement increase (200 meV for a 1nm QW), modified by smaller decreases due to environmental electric field effects. Our modeling gave excellent quantitative agreement with measurements for a wide range of QW thickness when both these effects are considered. In a separate study, the cleaved QW were used as nm-apertures to estimate the resolution of BEEM as a function of metal film thickness. We found that BEEM resolution degrades as the top metal film layer is made thicker, from 12 nm for a 4 nm thick Au layer, up to 22 nm for a 15 nm thick Au layer. Also presented is modeling of the electrostatic potential profile around charged threading dislocations (TD) in GaN, close to a metal-semiconductor interface, and its dependence on the energy of acceptor sites along the dislocation. We found that for energy values higher than 1.13 eV the near interface TD acceptors are completely filled right up to the interface. This results in a very large negative space charge and an increase in the local barrier height close to the TD core that should be observable by techniques such as BEEM.
Author : Laura Lazzarini
Publisher : Elsevier Inc. Chapters
ISBN 13 : 0128083433
Total Pages : 78 pages
Book Rating : 4.1/5 (28 download)
Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Laura Lazzarini and published by Elsevier Inc. Chapters. This book was released on 2013-04-11 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Angela Elizabeth Fowell
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (127 download)
Download or read book Ballistic Electron Emission Microscopy of Semiconductor Interfacess written by Angela Elizabeth Fowell and published by . This book was released on 1991 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yulu Che
Publisher :
ISBN 13 :
Total Pages : 137 pages
Book Rating : 4.:/5 (686 download)
Download or read book Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers written by Yulu Che and published by . This book was released on 2010 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this thesis, we present two separate studies: (1) The development and use of "amibipolar" ballistic electron emission microscopy (BEEM), which allows the measurement of Schottky barrier heights for both electrons and holes at the same location on the same metal/semiconductor contact with nm-scale spatial resolution and meV-scale energy resolution. A significant accomplishment of this study is the successful development of a new method that can monitor lateral variations of the local interface electric field and local interface dipoles at metal/semiconductor contacts by monitoring local variations in the electron- and hole SBHs. (2) Ion milling and inductively coupled plasma reactive ion etching (ICP-RIE) of vertical silicon nanowires, in order to increase the fraction of vertical vs. non-vertical nanowires.
Author : Andres Fernandez
Publisher :
ISBN 13 :
Total Pages : 408 pages
Book Rating : 4.:/5 (64 download)
Download or read book Ballistic Electron Emission Microscopy Studies of the Epitaxial Nickel Disilicide-silicon Interface System written by Andres Fernandez and published by . This book was released on 1992 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : David Cherns
Publisher : Springer Science & Business Media
ISBN 13 : 1461305276
Total Pages : 413 pages
Book Rating : 4.4/5 (613 download)
Download or read book Evaluation of Advanced Semiconductor Materials by Electron Microscopy written by David Cherns and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.
