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Download or read book Ballistic-Electron Emission Microscopy (BEEM) Applied to Study the Electronic Structure of Metal/Semiconductor Interfaces written by and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mario Prietsch
Publisher :
ISBN 13 :
Total Pages : 69 pages
Book Rating : 4.:/5 (15 download)
Download or read book Ballistic Electron Emission Microscopy (beem) written by Mario Prietsch and published by . This book was released on 1995 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Angela D. Davies
Publisher :
ISBN 13 :
Total Pages : 562 pages
Book Rating : 4.E/5 ( download)
Download or read book Ballistic-electron-emission Microscopy of Silicon-based Schottky Systems written by Angela D. Davies and published by . This book was released on 1994 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 44 pages
Book Rating : 4.:/5 (227 download)
Download or read book BEEM 94. Annual Workshop on Ballistic Electron Emission Microscopy (5th) Held in New York on January 24, 1994 written by and published by . This book was released on 1994 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt: Partial contents: Electron transport across interfaces and surfaces: an overview; BEEM studies of strain-tuned semiconductor interfaces; Transport studies in semiconductor heterostructures using BEEM; Spectroscopic studies of quantum-wells and -wires using an STM; BEEM in pinholes of NiS2 films on n- Si(111)-7x7: determination of the impact ionization quantum yield in Si; Low- temperature UHV BEEM of epitaxial CoSi2/Si(111); Interfacial barrier studies of epitaxial CoGa on n-type (100) GaAs with BEEM; BEEM on Au/Si(111)7x7 and Au/ CaF2/Si(111)7x7; Temperature dependence of Schottky barriers as probed by BEEM; Nanoscopic barrier height distributions at metal/semiconductor interfaces and observation of critical lengths; BEEM studies of reversed-biased Schottky diodes; Ballistic models applied to low-temperature BEEM measurements of Au/Si interfaces; Electron inelastic mean free path and spatial resolution of BEEM.
Author : David Allen Pearson
Publisher :
ISBN 13 :
Total Pages : 934 pages
Book Rating : 4.:/5 (318 download)
Download or read book Theory of Ballistic Electron Emission Microscopy written by David Allen Pearson and published by . This book was released on 1999 with total page 934 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Francesca Diane Pardo
Publisher :
ISBN 13 :
Total Pages : 344 pages
Book Rating : 4.E/5 ( download)
Download or read book Ballistic Electron Emission Microscopy Studies of Lateral Variation in Schottky Barrier Height written by Francesca Diane Pardo and published by . This book was released on 1998 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this dissertation, three experiments are discussed. The first BEEM (Ballistic Electron Emission Microscopy) characterization of an InAlAs Schottky barrier, an investigation into the possibility of field pinch-off in Au/GaAs samples, and the first demonstration of BEEM on a cleaved multilayer cross-section. Covers results for BEEM research, focusing on BEEM resolution and noise analysis.
Author : Eric Heller
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (555 download)
Download or read book Ultra Low Signals in Ballistic Electron Emission Microscopy written by Eric Heller and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this work it is first shown that internal gain can be applied specifically to hot BEEM electrons without amplifying standard BEEM noise sources. It is shown that BEEM with single hot electron sensitivity (approximately a factor of 1000 improvement in the minimum detectable BEEM signal) is attainable with modified commercially existing avalanche photodiodes. This allows useful data collection at lower signal levels than previously possible. With this new low-signal capability, it was obvious that a new BEEM-like signal was being detected. We have discovered that STM tunneling generated photons that will create a false signal in most BEEM samples. Furthermore, we have characterized this effect which we call "STM-PC" and it is demonstrated with Pd/SiO2/Si and Au/SiO2/Si samples that this false signal closely mimics BEEM and is easily confused for BEEM. We discuss ways to separate real BEEM from this new effect. Separately, thermally generated kinks on steps on the Si(001) surface are counted and analyzed to determine the energy of the SB-type step. Previous work by others is extended by counting a new type of feature, the "switch" kink, to allow a more accurate determination of the energy of SB-steps in the presence of defects that will bow steps and cause non-thermal kinks. Extensive data collection along with this new extension allows a more accurate determination of the B-type kink energy than before and the first experimental evidence that this energy increases with tensile strain on the Si(001) surface. Modifications to an Omicron Variable Temperature Scanning Tunneling Microscope (VT-STM) will be presented. The VT-STM will be moved to the Electrical Engineering Department cleanroom of The Ohio State University and will allow in-situ studies of Molecular Beam Epitaxy (MBE) grown samples. Modifications, repairs, and operating procedures will be discussed for the VT-STM and supporting hardware. The bulk of the modifications to be discussed have been to allow sample transfer between the STM and the MBE machine. Last, work on Low Temperature Grown Gallium Arsenide (LTG-GaAs) will be presented. The ultimate goal of detecting nm-scale arsenic precipitates that form with annealing using BEEM was not successful.
Author : Wei Cai
Publisher :
ISBN 13 :
Total Pages : 188 pages
Book Rating : 4.:/5 (681 download)
Download or read book Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/oxide/si, High-k Oxide/si, and "end-on" Metal Contacts to Vertical Si Nanowires written by Wei Cai and published by . This book was released on 2010 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this thesis, three separate experiments involving electronic materials are described. Nanometer-spatial resolution ballistic electron emission microscopy (BEEM) is used to study the inhomogeneity of metal-bialyer/SiO2 interface, and small size and restricted geometry effect of "end-on" metal contacts to vertical Si NWs embedded in spin-on glass. BEEM and internal photoemission (Int-PE) are also combined for the first time to study conduction and valence band offsets between Si and promising high-k (high dielectric constant) oxides: Sc2O3 and Lu2O3. In the first experiment, a comparison of the dependence on gate voltage of the average energy barrier measured by BEEM of a metal bi-layer Pt/Al/SiO2/Si sample and a Pt/SiO2/Si sample suggests that the metal/oxide interface of the Pt/Al/SiO2/Si sample is laterally inhomogeneous at nm length scales. However, BEEM images of the bi-layer sample do not show significantly larger lateral variations than observed on a (uniform) Pt/SiO2/Si sample, indicating that any inhomogeneous "patches" of lower energy barrier height have size smaller than the lateral resolution of BEEM, estimated for these samples to be ~10 nm. Finite element electrostatic simulations of an assumed inhomogeneous interface with nm size patches of different effective work function can fit the experimental data of the bi-layer sample much better than an assumed homogenous interface, indicating that bi-layer film is in fact laterally inhomogeneous at the nm scale. Int-PE measurements on 20 nm-thick epitaxial Sc2O3 and Lu2O3 film on Si (111) show the existence of a lower "tail state" conduction band (CB) extending ~1 eV below the upper CB (similar to that reported for amorphous Sc2O3 and Lu2O3 films), indicating that these states are not simply due to disorder in amorphous films. BEEM measurements on epitaxial Sc2O3/Si also show that this lower CB supports elastic hot-electron transport even against an applied electric field, indicating transport via extended rather than localized states. BEEM measurements on "end-on" Au contacts to vertical Si NWs show strong suppression of hot-electron injection at higher injected current in the NWs (produced either by increasing the tip voltage or the tunneling current) comparing to a regular Au/Si junction, suggesting that this current suppression is due to a steady-state charge build-up in the NW that increase as more current is injected into the NW. The BEEM current suppression of most NWs was also found to increase strongly at lower temperature, indicating more charge build-up at lower temperature. Time-dependent current suppression due to changing steady-state charge build-up in the NWs was observed when the tunnel current was abruptly increased and decreased, directly supporting a model in which the BEEM current suppression is due to (temperature-dependent) steady-state charge build up. Those electrons might be trapped at the NW/SiO2 interface close to the metal/Si NW contact, consistent with finite element simulations. Our BEEM measurements also show that the local Schottky barrier height (SBH) at the edge of two separate NWs is ~20 meV lower than at the NWs center. Finite element simulation suggests that the lower SBH at the contact edge might be due to the NW/oxide interface states charge.
Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (946 download)
Download or read book Ballistic Electron Emission Microscopy Study of Novel Quantum Objects and Electronic Defects written by and published by . This book was released on 2000 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the approximately 2 1/2 year period of the above AFOSR grant, substantial progress has been made in the further development of Ballistic Electron Emission Microscopy (BEEM) as a quantitative microscopic and spectroscopic tool for the characterization of buried quantum objects and electronic defects in semiconductors. During the period of this grant, we have done the following: Developed a theoretical model for the simulation of BEEM spectra. The model is compared with the experimentally obtained Second Derivative (SD) spectra for the prototypical case of Al(x)Ga(1-x)As/GaAs heterostructures. Quantitative numerical agreement is obtained. ii. We have extended the modeling with Monte Carlo simulations to get detailed understanding of BEEM spectra as a function of depth below the surface. iii. BEEM has been used for several spectroscopic studies on novel materials systems. These include observation of the splitting of the L band in GaInP due to ordering. the "local" conduction band offset of GaSb quantum.
Author : Yann Claveau
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (9 download)
Download or read book Modeling of Ballistic Electron Emission Microscopy written by Yann Claveau and published by . This book was released on 2014 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: After the discovery of Giant Magneto-Resistance (GMR) by Albert Fert and Peter Grünberg, electronics had a breakthrough with the birth of a new branch called spintronics. This discipline, while still young, exploit the spin of electrons, for instance to store digital information. Most quantum devices exploiting this property of electrons consist of alternating magnetic and nonmagnetic thin layers on a semiconductor substrate. One of the best tools used for characterizing these structures, invented in 1988 by Kaiser and Bell, is the so-called Ballistic Electron Emission Microscope (BEEM). Originally, this microscope, derived from the scanning tunneling microscope (STM), was dedicated to the imaging of buried (nanometer-scale) objects and to the study of the potential barrier (Schottky barrier) formed at the interface of a metal and a semiconductor when placed in contact. With the development of spintronics, the BEEM became an essential spectroscopy technique but still fundamentally misunderstood. It was in 1996 that the first realistic model, based on the non-equilibrium Keldysh formalism, was proposed to describe the transport of electrons during BEEM experiments. In particular, this model allowed to explain some experimental results previously misunderstood. However, despite its success, its use was limited to the study of semi-infinite structures through a calculation method called decimation of Green functions. In this context, we have extended this model to the case of thin films and hetero-structures like spin valves: starting from the same postulate that electrons follow the band structure of materials in which they propagate, we have established an iterative formula allowing calculation of the Green functions of the finite system by tight-binding method. This calculation of Green's functions has been encoded in a FORTRAN 90 program, BEEM v3, in order to calculate the BEEM current and the surface density of states. In parallel, we have developed a simpler method which allows to avoid passing through the non-equilibrium Keldysh formalism. Despite its simplicity, we have shown that this intuitive approach gives some physical interpretation qualitatively similar to the non-equilibrium approach. However, for a more detailed study, the use of “non-equilibrium approach” is inevitable, especially for the detection of thickness effects linked to layer interfaces. We hope these both tools should be useful to experimentalists, especially for the Surfaces and Interfaces team of our department.
Author : Soner Özcan
Publisher :
ISBN 13 : 9783838100326
Total Pages : 132 pages
Book Rating : 4.1/5 (3 download)
Download or read book Ballistic Electron Transport Through Organic Semiconductors written by Soner Özcan and published by . This book was released on 2008-10-01 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the framework of this thesis Ballistic Electron Emission Microscopy/ Spectroscopy (BEEM/S) was used to investigate semiconductor heterostructures. Including organic semiconductors like titanylphthalocyanine (TiOPc) and hexa-peri hexabenzocoronene (HBe. Analyzing the BEEM spectra we find that the TiOPc increases the BEEM threshold voltage compared to reference Au/GaAs diodes. The energy dependent electron transmission properties of TiOPc were investigated too. Additionally, an approach for the determination of the attenuation length of TiOPc as a function of energy has been successfully introduced. Finally, the Schottky barrier heights of Au/HBC/GaAs heterostructures were investigated by BEEM. The high barrier at the HBiGaAs interface makes this material a promising interfacial layer for increasing the open circuit voltage of GaAs Schottky barrier solar cells.
Author : Yulu Che
Publisher :
ISBN 13 :
Total Pages : 137 pages
Book Rating : 4.:/5 (686 download)
Download or read book Ambipolar Ballistic Electron Emission Microscopy Studies of Gate-field Modified Schottky Barriers written by Yulu Che and published by . This book was released on 2010 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In this thesis, we present two separate studies: (1) The development and use of "amibipolar" ballistic electron emission microscopy (BEEM), which allows the measurement of Schottky barrier heights for both electrons and holes at the same location on the same metal/semiconductor contact with nm-scale spatial resolution and meV-scale energy resolution. A significant accomplishment of this study is the successful development of a new method that can monitor lateral variations of the local interface electric field and local interface dipoles at metal/semiconductor contacts by monitoring local variations in the electron- and hole SBHs. (2) Ion milling and inductively coupled plasma reactive ion etching (ICP-RIE) of vertical silicon nanowires, in order to increase the fraction of vertical vs. non-vertical nanowires.
Author :
Publisher :
ISBN 13 :
Total Pages : 15 pages
Book Rating : 4.:/5 (946 download)
Download or read book Ballistic Electron Emission Spectroscopy Study of Transport Through Semiconductor Quantum Wells and Quantum Dots written by and published by . This book was released on 1997 with total page 15 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report summarizes the development and use of Ballistic Electron Emission Microscopy (BEEM) for nondestructive, local characterization of semiconductor heterostructures under AFOSR grant No. F49620-94-1-0378. The technique has been applied for measuring heterojunction band offsets, for studying band structure effects in electron tunneling through double barrier resonant tunneling structures, and for imaging current flow through buried mesoscopic structures such as quantum dots (approx. 10nm in size) and misfit dislocations 80nm below the surface. Monte Carlo simulations of the transport have also been performed. The results suggest that BEEM is a powerful new low energy electron microscopy for materials physics study on the nm scale.
Author : Lai Zhao
Publisher : ProQuest
ISBN 13 : 9780549813897
Total Pages : pages
Book Rating : 4.8/5 (138 download)
Download or read book Integrated Ballistic Electron Emission Luminescence written by Lai Zhao and published by ProQuest. This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Ballistic electron emission luminescence (BEEL), since proposed by Dr. Appelbaum in 2003, is receiving considerable attention from the field of material science and semiconductor engineering. With respects to the tremendous developments in the field of solid state optically active device, such as heterostructure-based light emitting diodes (LEDs) on the scale of nanometer, however, it is difficult to characterize the carrier generation, transport and recombination due to direct optic observation is encumbered by the fact that most of the involved processes occur deeply below the material surface. The requirements of higher efficiency, brighter luminescence, broader wavelength spectrum and stable productivity call for effective methods in revealing and monitoring the detailed mechanisms. Based on the successful progress in ballistic electron emission microscopy (BEEM), hot electron induced luminescence provides a unique way to examine the dynamics of excess carriers in a deeply buried depth. In this thesis, BEEL device with integrated photo detector is designed and fabricated to realize the idea of detecting the bandage luminescence in sample heterostructure by injection of low-energy hot electron. Si p-n junction detector is integrated into the device by means of vacuum wafer bonding. Both luminescence and photocurrent are measured simultaneously at low temperature (85K) within four-terminal connection mode. The outline of this thesis is as follow: First of all, the background of this research is introduced base on the literature review; secondly, the fabrication processes as well as the measurement setup is descried in detail; in the following chapter, measurement results both in optics and electrics are demonstrated and discussed; finally, in the summary future experiments are prospected based on the work in this thesis.
Author : Robert Miles
Publisher :
ISBN 13 :
Total Pages : 69 pages
Book Rating : 4.:/5 (115 download)
Download or read book Ballistic Electron Emission Microscopy written by Robert Miles and published by . This book was released on 1989 with total page 69 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : P. L. de Andres
Publisher :
ISBN 13 :
Total Pages : 51 pages
Book Rating : 4.:/5 (487 download)
Download or read book Theory of Ballistic Electron Emission Microscopy written by P. L. de Andres and published by . This book was released on 2001 with total page 51 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Angela Elizabeth Fowell
Publisher :
ISBN 13 :
Total Pages : 308 pages
Book Rating : 4.:/5 (896 download)
Download or read book Ballistic Electron Emission Microscopy of Semiconductor Interfaces written by Angela Elizabeth Fowell and published by . This book was released on 1991 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
