Atomic Structure Of Pyramidal Defects In Gan

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Atomic Structure of Pyramidal Defects in GaN

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (727 download)

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Book Synopsis Atomic Structure of Pyramidal Defects in GaN by :

Download or read book Atomic Structure of Pyramidal Defects in GaN written by and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The atomic structure of the characteristic defects (Mg-rich hexagonal pyramids) in p-doped bulk and MOCVD GaN:Mg thin films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects, confirmed also with positron annihilation. The inside walls of the cavities were covered by GaN of reverse polarity compared to the matrix. Defects in bulk GaN:Mg were almost one order of magnitude larger than in thin films. An exchange of Ga and N sublattices within the defect compared to the matrix lead to a 0.6 ± 0.2 Å displacement between the Ga sublattices of these two areas. A [1100]/3 shift with change from AB stacking in the matrix to BC within the entire pyramid was observed. Annealing of the MOCVD layers lead to slight increase of the defect size and an increase of the photoluminescence intensity. Positron annihilation confirms presence of vacancies of different sizes triggered by the Mg doping in as-grown samples and decrease of their concentration upon annealing at 900 and 1000 C.

Defects in P-GaN and Their Atomic Structure

Author : Z. Liliental-Weber
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (316 download)

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Book Synopsis Defects in P-GaN and Their Atomic Structure by : Z. Liliental-Weber

Download or read book Defects in P-GaN and Their Atomic Structure written by Z. Liliental-Weber and published by . This book was released on 2004 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this paper defects formed in p-doped GaN:Mg grown with Ga polarity will be discussed. The atomic structure of these characteristic defects (Mg-rich hexagonal pyramids and truncated pyramids) in bulk and thin GaN:Mg films grown with Ga polarity was determined at atomic resolution by direct reconstruction of the scattered electron wave in a transmission electron microscope. Small cavities were present inside the defects. The inside walls of the cavities were covered by GaN which grew with reverse polarity compared to the matrix. It was proposed that lateral overgrowth of the cavities restores matrix polarity on the defect base. Exchange of Ga and N sublattices within the defect compared to the matrix lead to a 0.6 {+-} 0.2 {angstrom} displacement between the Ga sublattices of these two areas. A [1{und 1}00]/3 shift with change from AB stacking in the matrix to BC within the entire pyramid is observed.

Atomic Structure of Defects in GaN

Author : Z. Liliental-Weber
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (316 download)

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Book Synopsis Atomic Structure of Defects in GaN by : Z. Liliental-Weber

Download or read book Atomic Structure of Defects in GaN written by Z. Liliental-Weber and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {l_brace}11{und 2}3{r_brace} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 {+-} 0.2{angstrom} displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base.

Pyramidal Defects in GaN

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ISBN 13 :
Total Pages : 5 pages
Book Rating : 4.:/5 (685 download)

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Download or read book Pyramidal Defects in GaN written by and published by . This book was released on 2005 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transmission electron microscopy (TEM) studies show formation of different types of Mg-rich defects in GaN. Types of defects strongly depend on crystal growth polarity. For bulk crystals grown with N-polarity, the planar defects are distributed at equal distances (20 unit cells of GaN). For growth with Ga-polarity (for both bulk and MOCVD grown crystals) a different type of defects have been found. These defects are three-dimensional Mg-rich hexagonal pyramids (or trapezoids) with their base on the (0001) plane and six walls formed on 1123 planes. The defects appear in [1120] and [1100] cross-section TEM micrographs as triangular and trapezoidal with sides inclined at 43 and 47 degrees to the base depending on the above observation directions, respectively. The dimension of these pyramids varies depending on growth method (50-1000 Angstrom), but the angle between the base and their sides remain the same. The direction from the tip of the pyramid to its base (and from the shorter to the longer base for trapezoidal defects) is along the Ga to N matrix bond direction. Analysis of the reconstructed exit wave phase image from the pyramid side indicates a shift of Ga atomic column positions from the matrix to the N position within the pyramid. In this way a 0.6"0.2 Angstrom displacement can be measured on the pyramid side between Ga positions in the matrix and within the pyramid.

Diffusion and Defect Data

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ISBN 13 :
Total Pages : 584 pages
Book Rating : 4.3/5 (91 download)

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Download or read book Diffusion and Defect Data written by and published by . This book was released on 1973 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Defects and Diffusion in Semiconductors

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ISBN 13 :
Total Pages : 348 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Defects and Diffusion in Semiconductors by :

Download or read book Defects and Diffusion in Semiconductors written by and published by . This book was released on 2007 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Direct Observations of Atomic Structures of Defects in GaN by High-resolution Z-contrast STEM.

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ISBN 13 :
Total Pages : 6 pages
Book Rating : 4.:/5 (684 download)

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Book Synopsis Direct Observations of Atomic Structures of Defects in GaN by High-resolution Z-contrast STEM. by :

Download or read book Direct Observations of Atomic Structures of Defects in GaN by High-resolution Z-contrast STEM. written by and published by . This book was released on 1997 with total page 6 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN/(0001) Sapphire grown by low pressure MOVPE is studied by high resolution Z-contrast imaging using STEM. First direct observation of the threading dislocation with edge character shows the atomic core structure, which appears to have a similar configuration to the {l_brace}10-10{r_brace} surface. The surfaces of the nanopipe walls are on {l_brace}10-10{r_brace} with the terminating layer between the atoms with one bond per pair. In addition, the high resolution Z contrast image of the prismatic stacking fault confirms the results by conventional HRTEM.

Microscopy of Semiconducting Materials 2003

Author : A.G. Cullis
Publisher : CRC Press
ISBN 13 : 1351091530
Total Pages : 1135 pages
Book Rating : 4.3/5 (51 download)

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Book Synopsis Microscopy of Semiconducting Materials 2003 by : A.G. Cullis

Download or read book Microscopy of Semiconducting Materials 2003 written by A.G. Cullis and published by CRC Press. This book was released on 2018-01-10 with total page 1135 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists.

Springer Handbook of Crystal Growth

Author : Govindhan Dhanaraj
Publisher : Springer Science & Business Media
ISBN 13 : 3540747613
Total Pages : 1823 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Springer Handbook of Crystal Growth by : Govindhan Dhanaraj

Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.

Defects in Advanced Electronic Materials and Novel Low Dimensional Structures

Author : Jan Stehr
Publisher : Woodhead Publishing
ISBN 13 : 0081020546
Total Pages : 309 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Defects in Advanced Electronic Materials and Novel Low Dimensional Structures by : Jan Stehr

Download or read book Defects in Advanced Electronic Materials and Novel Low Dimensional Structures written by Jan Stehr and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Advanced Electronic Materials and Novel Low Dimensional Structures provides a comprehensive review on the recent progress in solving defect issues and deliberate defect engineering in novel material systems. It begins with an overview of point defects in ZnO and group-III nitrides, including irradiation-induced defects, and then look at defects in one and two-dimensional materials, including carbon nanotubes and graphene. Next, it examines the ways that defects can expand the potential applications of semiconductors, such as energy upconversion and quantum processing. The book concludes with a look at the latest advances in theory. While defect physics is extensively reviewed for conventional bulk semiconductors, the same is far from being true for novel material systems, such as low-dimensional 1D and 0D nanostructures and 2D monolayers. This book fills that necessary gap. Presents an in-depth overview of both conventional bulk semiconductors and low-dimensional, novel material systems, such as 1D structures and 2D monolayers Addresses a range of defects in a variety of systems, providing a comparative approach Includes sections on advances in theory that provide insights on where this body of research might lead

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Author : Osamu Ueda
Publisher : Springer Science & Business Media
ISBN 13 : 1461443377
Total Pages : 618 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Materials and Reliability Handbook for Semiconductor Optical and Electron Devices by : Osamu Ueda

Download or read book Materials and Reliability Handbook for Semiconductor Optical and Electron Devices written by Osamu Ueda and published by Springer Science & Business Media. This book was released on 2012-09-22 with total page 618 pages. Available in PDF, EPUB and Kindle. Book excerpt: Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

Charged Semiconductor Defects

Author : Edmund G. Seebauer
Publisher : Springer Science & Business Media
ISBN 13 : 1848820593
Total Pages : 304 pages
Book Rating : 4.8/5 (488 download)

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Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer

Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Reliability of Semiconductor Lasers and Optoelectronic Devices

Author : Robert Herrick
Publisher : Woodhead Publishing
ISBN 13 : 0128192550
Total Pages : 334 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Reliability of Semiconductor Lasers and Optoelectronic Devices by : Robert Herrick

Download or read book Reliability of Semiconductor Lasers and Optoelectronic Devices written by Robert Herrick and published by Woodhead Publishing. This book was released on 2021-03-06 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: Reliability of Semiconductor Lasers and Optoelectronic Devices simplifies complex concepts of optoelectronics reliability with approachable introductory chapters and a focus on real-world applications. This book provides a brief look at the fundamentals of laser diodes, introduces reliability qualification, and then presents real-world case studies discussing the principles of reliability and what occurs when these rules are broken. Then this book comprehensively looks at optoelectronics devices and the defects that cause premature failure in them and how to control those defects. Key materials and devices are reviewed including silicon photonics, vertical-cavity surface-emitting lasers (VCSELs), InGaN LEDs and lasers, and AlGaN LEDs, covering the majority of optoelectronic devices that we use in our everyday lives, powering the Internet, telecommunication, solid-state lighting, illuminators, and many other applications. This book features contributions from experts in industry and academia working in these areas and includes numerous practical examples and case studies. This book is suitable for new entrants to the field of optoelectronics working in R&D. • Includes case studies and numerous examples showing best practices and common mistakes affecting optoelectronics reliability written by experts working in the industry • Features the first wide-ranging and comprehensive overview of fiber optics reliability engineering, covering all elements of the practice from building a reliability laboratory, qualifying new products, to improving reliability on mature products. • Provides a look at the reliability issues and failure mechanisms for silicon photonics, VCSELs, InGaN LEDs and lasers, AIGaN LEDs, and more.

Archivgut aus Privatbesitz erworben von den bayerischen Staatsarchiven seit 1960

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ISBN 13 :
Total Pages : 20 pages
Book Rating : 4.:/5 (634 download)

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Book Synopsis Archivgut aus Privatbesitz erworben von den bayerischen Staatsarchiven seit 1960 by :

Download or read book Archivgut aus Privatbesitz erworben von den bayerischen Staatsarchiven seit 1960 written by and published by . This book was released on 1971 with total page 20 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Characterization of Semiconductor Heterostructures and Nanostructures

Author : Giovanni Agostini
Publisher : Newnes
ISBN 13 : 044459549X
Total Pages : 829 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Characterization of Semiconductor Heterostructures and Nanostructures by : Giovanni Agostini

Download or read book Characterization of Semiconductor Heterostructures and Nanostructures written by Giovanni Agostini and published by Newnes. This book was released on 2013-04-11 with total page 829 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Handbook of GaN Semiconductor Materials and Devices

Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1498747140
Total Pages : 709 pages
Book Rating : 4.4/5 (987 download)

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Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 709 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

Nitride Semiconductors

Author : Pierre Ruterana
Publisher : John Wiley & Sons
ISBN 13 : 3527607404
Total Pages : 686 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Nitride Semiconductors by : Pierre Ruterana

Download or read book Nitride Semiconductors written by Pierre Ruterana and published by John Wiley & Sons. This book was released on 2006-05-12 with total page 686 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currently the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components. This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.