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Author : Thomas William Gregg
Publisher :
ISBN 13 :
Total Pages : 112 pages
Book Rating : 4.:/5 (142 download)
Download or read book An Infrared Annealing Study of Neutron Transmutation Doped Silicon: Gallium written by Thomas William Gregg and published by . This book was released on 1985 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Richard Albert Gassman
Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (12 download)
Download or read book Isothermal Annealing Study of Neutron Transmutation Doped Silicon:gallium written by Richard Albert Gassman and published by . This book was released on 1983 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Tianming Philip Roan
Publisher :
ISBN 13 :
Total Pages : 106 pages
Book Rating : 4.:/5 (211 download)
Download or read book An Infrared Annealing Study of Float Zone Neutron Transmutation Doped Silicon written by Tianming Philip Roan and published by . This book was released on 1988 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 58 pages
Book Rating : 4.:/5 (227 download)
Download or read book A Study of Defects in Neutron Transmutation Doped Silicon: Gallium by Hall Effect Analysis written by and published by . This book was released on 1984 with total page 58 pages. Available in PDF, EPUB and Kindle. Book excerpt: Temperature-dependent Hall effect analysis has been used to study neutron transmutation doped, p-type silicon conventionally doped with gallium. Moderate temperature anneals of the irradiated material produced three shallow acceptor levels. The first, at 0.57 ev., was detected after prolonged anneals at 525 C and has been identified as the Ga-X level, a substitutional gallium-substitutional carbon complex. The other two levels appeared after anneals at 600 C.
Author : Ewan Macelwee Lawson
Publisher :
ISBN 13 : 9780642598691
Total Pages : 8 pages
Book Rating : 4.5/5 (986 download)
Download or read book Rapid Thermal Annealing of Neutron Transmutation Doped Silicon written by Ewan Macelwee Lawson and published by . This book was released on 1987 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jens Guldberg
Publisher : Springer Science & Business Media
ISBN 13 : 1461332613
Total Pages : 493 pages
Book Rating : 4.4/5 (613 download)
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Author : D. Alexiev
Publisher :
ISBN 13 : 9780642598776
Total Pages : 11 pages
Book Rating : 4.5/5 (987 download)
Download or read book Neutron Transmutation Doping of Gallium Arsenide written by D. Alexiev and published by . This book was released on 1987 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jens Guldberg
Publisher :
ISBN 13 : 9781461332626
Total Pages : 520 pages
Book Rating : 4.3/5 (326 download)
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by . This book was released on 2014-01-15 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert D. Larrabee
Publisher : Springer Science & Business Media
ISBN 13 : 1461326958
Total Pages : 337 pages
Book Rating : 4.4/5 (613 download)
Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.
Author :
Publisher :
ISBN 13 :
Total Pages : 702 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. Meese
Publisher : Springer Science & Business Media
ISBN 13 : 1468482491
Total Pages : 368 pages
Book Rating : 4.4/5 (684 download)
Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.
Author :
Publisher :
ISBN 13 :
Total Pages : 664 pages
Book Rating : 4.3/5 (129 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1985 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
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ISBN 13 :
Total Pages : 1812 pages
Book Rating : 4.F/5 ( download)
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 1812 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
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ISBN 13 :
Total Pages : 676 pages
Book Rating : 4.:/5 (31 download)
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1985 with total page 676 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Guihua Lu
Publisher :
ISBN 13 :
Total Pages : 126 pages
Book Rating : 4.:/5 (211 download)
Download or read book Effect of Neutron Transmutation Doping on the Optical Properties of Gallium Arsenide written by Guihua Lu and published by . This book was released on 1988 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 464 pages
Book Rating : 4.:/5 (3 download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: Includes all works deriving from DOE, other related government-sponsored information and foreign nonnuclear information.
![Download A Study of Infrared Absorption in Electron-and Neutron-irradiated Gallium Arsenide [microform] PDF Online Free](https://books.google.com/books/content/images/frontcover/DK1FNAEACAAJ?fife=w200-h370)
Author : Vaidyanathan, Kavasseri V
Publisher : National Library of Canada
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (757 download)
Download or read book A Study of Infrared Absorption in Electron-and Neutron-irradiated Gallium Arsenide [microform] written by Vaidyanathan, Kavasseri V and published by National Library of Canada. This book was released on 1971 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
