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Amorphous And Crystalline Silicon Carbide Iv Proceedings F The International Conference 14th Held In Santa Clara California On October 9 11 1991
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Book Synopsis Amorphous and Crystalline Silicon Carbide IV. Proceedings F the International Conference (14th) Held in Santa Clara, California on October 9-11, 1991 by : H. K. Lotsch
Download or read book Amorphous and Crystalline Silicon Carbide IV. Proceedings F the International Conference (14th) Held in Santa Clara, California on October 9-11, 1991 written by H. K. Lotsch and published by . This book was released on 1991 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: The volume is divided into four parts according to growth, characterization, and applications. Some exciting and technologically promising results are reported for the first time; for example, HBTs using microcrystalline Si and a-SiC, SiC hetero-emitter and epitaxial base transistors, optoelectronic applications of 6H-SiC, formation of SiGe/Si heterostructures by low-temperature germanium ion implantation, growth of 40 mm diameter 6H-SiC single crystal boules, and growth of silicon carbon alloy on Si(100) superlattices, to name only a few.
Book Synopsis Amorphous and Crystalline Silicon Carbide IV by : Cary Y. Yang
Download or read book Amorphous and Crystalline Silicon Carbide IV written by Cary Y. Yang and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 439 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Book Synopsis Superconducting Devices and Their Applications by : Hans Koch
Download or read book Superconducting Devices and Their Applications written by Hans Koch and published by Springer. This book was released on 1992-07-28 with total page 603 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the discovery of high-temperature superconductivity considerable progress has been made in research and development of superconductive electronic devices. This fact is reflected by the large variety of contributions to the 4th International Conference on Superconducting and Quantum Effect Devices and their Applications - SQUID'91. This comprehensive proceedings volume covers Josephson junctions, SQUIDs, radiation detectors, flux-flow transitors.. The main applications are contained in the chapters on biomagnetic instrumentation, metrologym and rf-applications. The purpose of this volume is to provide an up-to-date reference book on thestatus of this rapidly changing and promising field of electronic device research on the basis of low- and high-temperature materials.
Book Synopsis Amorphous and Crystalline Silicon Carbide II by : Mahmud M. Rahman
Download or read book Amorphous and Crystalline Silicon Carbide II written by Mahmud M. Rahman and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.
Book Synopsis Government reports annual index by :
Download or read book Government reports annual index written by and published by . This book was released on 199? with total page 1190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Government Reports Announcements & Index by :
Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1993 with total page 1802 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials by : Gary Lynn Harris
Download or read book Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials written by Gary Lynn Harris and published by Springer. This book was released on 1992 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Amorphous and Crystalline Silicon Carbide and Related Materials by : Gary L. Harris
Download or read book Amorphous and Crystalline Silicon Carbide and Related Materials written by Gary L. Harris and published by Springer. This book was released on 1989-03-08 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.
Book Synopsis Amorphous and Crystalline Silicon Carbide III by : Gary L. Harris
Download or read book Amorphous and Crystalline Silicon Carbide III written by Gary L. Harris and published by Springer. This book was released on 1992 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains written versions of the papers presented at the Third Inter national Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (lCACSC 90), which was held at Howard University, April 11-13, 1990 in Washington, DC. The ICACSC continued to provide an international forum for discussion and exchange of ideas regarding the current state of research aimed at developing silicon carbide devices and circuits and related materials. ICACSC attracted over one hundred participants from seven countries. A special session was held in honor of the eight Soviet scientists who attended the conference. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. The conference also included a poster session for the first time. This volume contains 54 refereed contributions grouped into four parts. Several exciting new results are reported for the first time here: SiC-based solid-solution growth and technology, the formation of SiGe heterostructures by ion implantation, 6H-SiC substrates grown by the sublimation method, expla nation of the appearance of negative differential resistance in a N+PN-SiC-6H transistor by the Wannier-Starck effect, the formation of amorphous SiC/Si het erojunctions by the polymer route, and the prospects of developing SiC bipolar transistors and thyristors.
Book Synopsis Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials by : Gary Lynn Harris
Download or read book Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials written by Gary Lynn Harris and published by Springer. This book was released on 1992-01-01 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Papers presented at the Third International Conference on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials (ICACSC 90)"--Pref.
Book Synopsis Amorphous and Crystalline Silicon Carbide IV by : Zongyuan Yang
Download or read book Amorphous and Crystalline Silicon Carbide IV written by Zongyuan Yang and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Amorphous and Crystalline Silicon Carbide IV by : Cary Y. Yang
Download or read book Amorphous and Crystalline Silicon Carbide IV written by Cary Y. Yang and published by Springer. This book was released on 1992-12-10 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Book Synopsis Amorphous and Crystalline Silicon Carbide IV by : Cary Y Yang
Download or read book Amorphous and Crystalline Silicon Carbide IV written by Cary Y Yang and published by . This book was released on 1992-12-10 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Carbide — 1968 by : H. K. Henisch
Download or read book Silicon Carbide — 1968 written by H. K. Henisch and published by Elsevier. This book was released on 2013-10-22 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.
Book Synopsis MEMS Materials and Processes Handbook by : Reza Ghodssi
Download or read book MEMS Materials and Processes Handbook written by Reza Ghodssi and published by Springer Science & Business Media. This book was released on 2011-03-18 with total page 1211 pages. Available in PDF, EPUB and Kindle. Book excerpt: MEMs Materials and Processes Handbook" is a comprehensive reference for researchers searching for new materials, properties of known materials, or specific processes available for MEMS fabrication. The content is separated into distinct sections on "Materials" and "Processes". The extensive Material Selection Guide" and a "Material Database" guides the reader through the selection of appropriate materials for the required task at hand. The "Processes" section of the book is organized as a catalog of various microfabrication processes, each with a brief introduction to the technology, as well as examples of common uses in MEMs.
Book Synopsis Recent Advances in Technology Research and Education by : Dumitru Luca
Download or read book Recent Advances in Technology Research and Education written by Dumitru Luca and published by Springer. This book was released on 2017-09-08 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents selected contributions to the 16th International Conference on Global Research and Education Inter-Academia 2017 hosted by Alexandru Ioan Cuza University of Iași, Romania from 25 to 28 September 2017. It is the third volume in the series, following the editions from 2015 and 2016. Fundamental and applied research in natural sciences have led to crucial developments in the ongoing 4th global industrial revolution, in the course of which information technology has become deeply embedded in industrial management, research and innovation – and just as deeply in education and everyday life. Materials science and nanotechnology, plasma and solid state physics, photonics, electrical and electronic engineering, robotics and metrology, signal processing, e-learning, intelligent and soft computing have long since been central research priorities for the Inter-Academia Community (I-AC) – a body comprising 14 universities and research institutes from Japan and Central/East-European countries that agreed, in 2002, to coordinate their research and education programs so as to better address today’s challenges. The book is intended for use in academic, government, and industrial R&D departments as a reference tool in research and technology education. The 42 peer-reviewed papers were written by more than 119 leading scientists from 14 countries, most of them affiliated to the I-AC.
Book Synopsis Proceedings of the Scientific-Practical Conference "Research and Development - 2016" by : K. V. Anisimov
Download or read book Proceedings of the Scientific-Practical Conference "Research and Development - 2016" written by K. V. Anisimov and published by Springer. This book was released on 2017-12-04 with total page 715 pages. Available in PDF, EPUB and Kindle. Book excerpt: This open access book relates to the III Annual Conference hosted by The Ministry of Education and Science of the Russian Federation in December 2016. This event has summarized, analyzed and discussed the interim results, academic outputs and scientific achievements of the Russian Federal Targeted Programme “Research and Development in Priority Areas of Development of the Russian Scientific and Technological Complex for 2014–2020.” It contains 75 selected papers from 6 areas considered priority by the Federal Targeted Programme: computer science, ecology & environment sciences; energy and energy efficiency; lifesciences; nanoscience & nanotechnology and transport & communications. The chapters report the results of the 3-years research projects supported by the Programme and finalized in 2016.
