Algan Gan Based Power Semiconductor Switches

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AlGaN/GaN-based Power Semiconductor Switches

Author : Bin Lu (Ph. D.)
Publisher :
ISBN 13 :
Total Pages : 219 pages
Book Rating : 4.:/5 (861 download)

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Book Synopsis AlGaN/GaN-based Power Semiconductor Switches by : Bin Lu (Ph. D.)

Download or read book AlGaN/GaN-based Power Semiconductor Switches written by Bin Lu (Ph. D.) and published by . This book was released on 2013 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and charge density. The ability to grow these devices on large-diameter Si wafers also reduces device cost and makes them easier for wide market adoption. However, the development of AlGaN/GaN-based power switches has encountered three major obstacles: the limited breakdown voltage of AlGaN/GaN transistors grown on Si substrates; the low performance of normally-off AlGaN/GaN transistors; and the degradation of device performance under high voltage pulsed conditions. This thesis studies these issues and presents new approaches to address these obstacles. The first part of the thesis studies the breakdown mechanism in AlGaN/GaN-on-Si transistors. A new quantitative model-trap-limited space-charge impact-ionization model- is developed. Based on this model, a set of design rules is proposed to improve the breakdown voltage of AlGaN/GaN-on-Si transistors. New technologies have also been demonstrated to increase the breakdown voltage of AlGaN/GaN-on-Si transistors beyond 1500 V. The second part of the thesis presents three technologies to improve the performance of normally-off AlGaN/GaN transistors. First, a dual-gate normally-off MISFET achieved high threshold voltage, high current and high breakdown voltage simultaneously by using an integrated cascode structure. Second, a tri-gate AlGaN/GaN MISFET demonstrated the highest current on/off ratio in normally-off GaN transistors with the enhanced electrostatic control from a tri-gate structure. Finally, a new etch-stop barrier structure is designed to address low channel mobility, high interface density and non-uniformity issues associated with the conventional gate recess technology. Using this new structure, normally-off MISFETs demonstrated high uniformity, steep sub-threshold slope and a record channel effective mobility. The thesis concludes with a new dynamic on-resistance measurement technique. With this method, the hard- and soft-switching characteristics of GaN transistors were measured for the first time.

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

AlGaN/GaN CAVETs for High Power Switching Application

Author : Srabanti Chowdhury
Publisher :
ISBN 13 : 9781124445755
Total Pages : 358 pages
Book Rating : 4.4/5 (457 download)

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Book Synopsis AlGaN/GaN CAVETs for High Power Switching Application by : Srabanti Chowdhury

Download or read book AlGaN/GaN CAVETs for High Power Switching Application written by Srabanti Chowdhury and published by . This book was released on 2010 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN-based power electronics are rapidly developing as a contender for application in next generation high efficiency power electronics. They are either lateral devices like HEMTs or vertical devices of the form of the Current Aperture Vertical Electron Transistor (CAVET). A CAVET is a vertical device with source and gate on top and a current aperture that allows current to flow vertically down from the source to the drain. It has a current blocking layer (CBL) to block current flowing vertically through any other path but the aperture. Lateral devices have been and still continue to be the center of attention in the AlGaN/GaN based device structures owing to the horizontal nature of the 2DEG. In power integrated circuits, there is frequently a need for several power devices to be formed on a single chip. One such application is an H-bridge driver circuit for motor control. In order to reduce the cost and increase the yield of an integrated circuit having multiple power devices, the size of each power device must be minimized.

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Author : Gaudenzio Meneghesso
Publisher : Springer
ISBN 13 : 331977994X
Total Pages : 242 pages
Book Rating : 4.3/5 (197 download)

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Book Synopsis Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by : Gaudenzio Meneghesso

Download or read book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-05-12 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Gallium Nitride Power Devices

Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767607
Total Pages : 301 pages
Book Rating : 4.3/5 (517 download)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594421
Total Pages : 470 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Monolithic Integration in E-Mode GaN Technology

Author : Maik Peter Kaufmann
Publisher : Springer Nature
ISBN 13 : 3031156250
Total Pages : 185 pages
Book Rating : 4.0/5 (311 download)

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Book Synopsis Monolithic Integration in E-Mode GaN Technology by : Maik Peter Kaufmann

Download or read book Monolithic Integration in E-Mode GaN Technology written by Maik Peter Kaufmann and published by Springer Nature. This book was released on 2022-10-26 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive, all-in-one source on design of monolithic GaN power ICs. It is written in handbook style with systematic guidelines and includes implementation examples. It covers the full range from technology fundamentals to implementation details including design techniques specific for GaN technology. It provides a detailed loss analysis based on comparative measurements between silicon and GaN based converters to provide an understanding of the relations between design choices and results which can be transferred to other power converter systems.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1118844769
Total Pages : 266 pages
Book Rating : 4.1/5 (188 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2014-09-15 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.

GaN Technology

Author : Maurizio Di Paolo Emilio
Publisher : Springer Nature
ISBN 13 : 3031632389
Total Pages : 388 pages
Book Rating : 4.0/5 (316 download)

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Book Synopsis GaN Technology by : Maurizio Di Paolo Emilio

Download or read book GaN Technology written by Maurizio Di Paolo Emilio and published by Springer Nature. This book was released on with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook of GaN Semiconductor Materials and Devices

Author : Wengang (Wayne) Bi
Publisher : CRC Press
ISBN 13 : 1351648055
Total Pages : 775 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Handbook of GaN Semiconductor Materials and Devices by : Wengang (Wayne) Bi

Download or read book Handbook of GaN Semiconductor Materials and Devices written by Wengang (Wayne) Bi and published by CRC Press. This book was released on 2017-10-20 with total page 775 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.

GaN-based Materials and Devices

Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)

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Book Synopsis GaN-based Materials and Devices by : Michael Shur

Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Wide Bandgap Based Devices

Author : Farid Medjdoub
Publisher : MDPI
ISBN 13 : 3036505660
Total Pages : 242 pages
Book Rating : 4.0/5 (365 download)

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Book Synopsis Wide Bandgap Based Devices by : Farid Medjdoub

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

ReliabilityStudy Of Power Gallium Nitride Transistors

Author :
Publisher : Marcon Denis
ISBN 13 : 9460183751
Total Pages : 229 pages
Book Rating : 4.4/5 (61 download)

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Book Synopsis ReliabilityStudy Of Power Gallium Nitride Transistors by :

Download or read book ReliabilityStudy Of Power Gallium Nitride Transistors written by and published by Marcon Denis. This book was released on with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Wide Bandgap Semiconductor Power Devices

Author : B. Jayant Baliga
Publisher : Woodhead Publishing
ISBN 13 : 0081023073
Total Pages : 420 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Wide Bandgap Semiconductor Power Devices by : B. Jayant Baliga

Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Power Electronics Handbook

Author : Muhammad H. Rashid
Publisher : Elsevier
ISBN 13 : 0323993435
Total Pages : 1472 pages
Book Rating : 4.3/5 (239 download)

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Book Synopsis Power Electronics Handbook by : Muhammad H. Rashid

Download or read book Power Electronics Handbook written by Muhammad H. Rashid and published by Elsevier. This book was released on 2023-09-27 with total page 1472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Handbook, Fifth Edition delivers an expert guide to power electronics and their applications. The book examines the foundations of power electronics, power semiconductor devices, and power converters, before reviewing a constellation of modern applications. Comprehensively updated throughout, this new edition features new sections addressing current practices for renewable energy storage, transmission, integration, and operation, as well as smart-grid security, intelligent energy, artificial intelligence, and machine learning applications applied to power electronics, and autonomous and electric vehicles. This handbook is aimed at practitioners and researchers undertaking projects requiring specialist design, analysis, installation, commissioning, and maintenance services. - Provides a fully comprehensive work addressing each aspect of power electronics in painstaking depth - Delivers a methodical technical presentation in over 1500 pages - Includes 50+ contributions prepared by leading experts - Offers practical support and guidance with detailed examples and applications for lab and field experimentation - Includes new technical sections on smart-grid security and intelligent energy, artificial intelligence, and machine learning applications applied to power electronics and autonomous and electric vehicles - Features new chapter level templates and a narrative progression to facilitate understanding

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

Author : Yogesh Kumar Sharma
Publisher : BoD – Books on Demand
ISBN 13 : 1789236681
Total Pages : 154 pages
Book Rating : 4.7/5 (892 download)

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Book Synopsis Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications by : Yogesh Kumar Sharma

Download or read book Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications written by Yogesh Kumar Sharma and published by BoD – Books on Demand. This book was released on 2018-09-12 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiC and GaN devices have been around for some time. The first dedicated international conference on SiC and related devices, "ICSCRM," was held in Washington, DC, in 1987. But only recently, the commercialization of SiC and GaN devices has happened. Due to its material properties, Si as a semiconductor has limitations in high-temperature, high-voltage, and high-frequency regimes. With the help of SiC and GaN devices, it is possible to realize more efficient power systems. Devices manufactured from SiC and GaN have already been impacting different areas with their ability to outperform Si devices. Some of the examples are the telecommunications, automotive/locomotive, power, and renewable energy industries. To achieve the carbon emission targets set by different countries, it is inevitable to use these new technologies. This book attempts to cover all the important facets related to wide bandgap semiconductor technology, including new challenges posed by it. This book is intended for graduate students, researchers, engineers, and technology experts who have been working in the exciting fields of SiC and GaN power devices.

Wide Bandgap Semiconductor Based Micro/Nano Devices

Author : Jung-Hun Seo
Publisher : MDPI
ISBN 13 : 3038978426
Total Pages : 138 pages
Book Rating : 4.0/5 (389 download)

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Book Synopsis Wide Bandgap Semiconductor Based Micro/Nano Devices by : Jung-Hun Seo

Download or read book Wide Bandgap Semiconductor Based Micro/Nano Devices written by Jung-Hun Seo and published by MDPI. This book was released on 2019-04-25 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.