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Advances In Growth Characterization And Applications Of Iii Nitrides Compound Related Materials
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Book Synopsis Advances in Growth, Characterization, and Applications of III-Nitrides Compound Related Materials by : John Atkinson
Download or read book Advances in Growth, Characterization, and Applications of III-Nitrides Compound Related Materials written by John Atkinson and published by . This book was released on 2021 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Innovative Growth and Defect Analysis of Group III - Nitrides for High Speed Electronics by :
Download or read book Innovative Growth and Defect Analysis of Group III - Nitrides for High Speed Electronics written by and published by . This book was released on 2008 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: The project focused on novel techniques in growth and characterization which may enhance group III - nitride applications. On the growth side nitride deposition on diamond templates was characterized as the most promising novel growth techniques. The continuing progress can be supported applying the novel characterization technique described below. Local inhomogeneities are a common feature in group III - nitrides. With standard characterization methods such materials cannot be properly evaluated. Multiple group III - nitride epilayers were investigated utilizing VEELS in combination with high resolution TEM in order to characterize the materials in high spatial and energy resolution. It was found that possible side effects such as sample damage due to electron irradiation or falsified results due to retardation effects can be avoided if proper sample treatment is applied. It is assumed that the occurrence of local electronic transitions in close vicinity to interfaces is due to the presence of local point or surface defects. For the first time it may become possible to investigate the impact of such defects on the performance of devices. For the InGaN alloy system nano-cluster formation which changes optical responses was investigated. It was found that the III-V compound InN exists as a composite InN:In material. InN commonly exhibits multiple optical responses including an interface and/or surface related effect, which triggered confusing scientific models in the past. The prospect of exploiting multiple energy transitions within ONE material offers completely new alternatives for novel device development.
Book Synopsis Optoelectronic Devices by : M Razeghi
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh
Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Book Synopsis Dilute III-V Nitride Semiconductors and Material Systems by : Ayse Erol
Download or read book Dilute III-V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer Science & Business Media. This book was released on 2008-01-12 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Book Synopsis Iii-nitride Semiconductor Materials by : Zhe Chuan Feng
Download or read book Iii-nitride Semiconductor Materials written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006-03-20 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Author : Publisher : ISBN 13 :9780198501596 Total Pages :690 pages Book Rating :4.5/5 (15 download)
Download or read book written by and published by . This book was released on with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis III-Nitride Semiconductor Optoelectronics by :
Download or read book III-Nitride Semiconductor Optoelectronics written by and published by Academic Press. This book was released on 2017-01-05 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
Book Synopsis III-nitride Devices and Nanoengineering by : Zhe Chuan Feng
Download or read book III-nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Book Synopsis GaN and Related Materials by : Stephen J. Pearton
Download or read book GaN and Related Materials written by Stephen J. Pearton and published by CRC Press. This book was released on 1997-10-29 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Book Synopsis State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V by : H. M. Ng
Download or read book State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics and Electronics V written by H. M. Ng and published by The Electrochemical Society. This book was released on 2004 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dilute III-V Nitride Semiconductors and Material Systems by : Ayse Erol
Download or read book Dilute III-V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer. This book was released on 2009-09-02 with total page 592 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Book Synopsis Growth and Characterization of Group III-Nitride Materials on (0001) Sapphire by Metalorganic Chemical Vapor Deposition by : Junko T. Kobayashi
Download or read book Growth and Characterization of Group III-Nitride Materials on (0001) Sapphire by Metalorganic Chemical Vapor Deposition written by Junko T. Kobayashi and published by . This book was released on 1998 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance by : Robert F Davis
Download or read book Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.
Book Synopsis Nitride Semiconductors - Bulk and Related Growth and Characterization by : Y. Mori
Download or read book Nitride Semiconductors - Bulk and Related Growth and Characterization written by Y. Mori and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis 21st Century Nanoscience by : Klaus D. Sattler
Download or read book 21st Century Nanoscience written by Klaus D. Sattler and published by CRC Press. This book was released on 2022-01-18 with total page 4153 pages. Available in PDF, EPUB and Kindle. Book excerpt: This 21st Century Nanoscience Handbook will be the most comprehensive, up-to-date large reference work for the field of nanoscience. Handbook of Nanophysics, by the same editor, published in the fall of 2010, was embraced as the first comprehensive reference to consider both fundamental and applied aspects of nanophysics. This follow-up project has been conceived as a necessary expansion and full update that considers the significant advances made in the field since 2010. It goes well beyond the physics as warranted by recent developments in the field. Key Features: Provides the most comprehensive, up-to-date large reference work for the field. Chapters written by international experts in the field. Emphasises presentation and real results and applications. This handbook distinguishes itself from other works by its breadth of coverage, readability and timely topics. The intended readership is very broad, from students and instructors to engineers, physicists, chemists, biologists, biomedical researchers, industry professionals, governmental scientists, and others whose work is impacted by nanotechnology. It will be an indispensable resource in academic, government, and industry libraries worldwide. The fields impacted by nanoscience extend from materials science and engineering to biotechnology, biomedical engineering, medicine, electrical engineering, pharmaceutical science, computer technology, aerospace engineering, mechanical engineering, food science, and beyond.
Book Synopsis Precursor Chemistry of Advanced Materials by : Roland A. Fischer
Download or read book Precursor Chemistry of Advanced Materials written by Roland A. Fischer and published by Springer Science & Business Media. This book was released on 2005-09-29 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: Material synthesis by the transformation of organometallic compounds (precursors) by vapor deposition techniques such as chemical vapor deposition (CVD) and atomic layer deposition (ALD) has been in the forefront of modern day research and development of new materials. There exists a need for new routes for designing and synthesizing new precursors as well as the application of established molecular precursors to derive tuneable materials for technological demands. With regard to the precursor chemistry, a most detailed understanding of the mechanistic complexity of materials formation from molecular precursors is very important for further development of new processes and advanced materials. To emphasize and stimulate research in these areas, this volume comprises a selection of case studies covering various key-aspects of the interplay of precursor chemistry with the process conditions of materials formation, particularly looking at the similarities and differences of CVD, ALD and nanoparticle synthesis, e.g. colloid chemistry, involving tailored molecular precursors.
