Advanced Mos Devices

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Low-Frequency Noise in Advanced MOS Devices

Author : Martin Haartman
Publisher : Springer Science & Business Media
ISBN 13 : 1402059108
Total Pages : 224 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Low-Frequency Noise in Advanced MOS Devices by : Martin Haartman

Download or read book Low-Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Advanced MOS Device Physics

Author : Norman Einspruch
Publisher : Elsevier
ISBN 13 : 0323153135
Total Pages : 383 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Advanced MOS Device Physics by : Norman Einspruch

Download or read book Advanced MOS Device Physics written by Norman Einspruch and published by Elsevier. This book was released on 2012-12-02 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.

Advanced MOS Devices

Author : Dieter K. Schroder
Publisher : Addison Wesley Publishing Company
ISBN 13 :
Total Pages : 268 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Advanced MOS Devices by : Dieter K. Schroder

Download or read book Advanced MOS Devices written by Dieter K. Schroder and published by Addison Wesley Publishing Company. This book was released on 1987 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pulls together all the relevant concepts in this field. Volume 5 builds upon the material previously covered in the series and contains references for further reading. For advanced students, industrial researchers and E.E. professionals.

Advanced MOS Devices and their Circuit Applications

Author : Ankur Beohar
Publisher : CRC Press
ISBN 13 : 1003831184
Total Pages : 181 pages
Book Rating : 4.0/5 (38 download)

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Book Synopsis Advanced MOS Devices and their Circuit Applications by : Ankur Beohar

Download or read book Advanced MOS Devices and their Circuit Applications written by Ankur Beohar and published by CRC Press. This book was released on 2024-01-19 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. The book: • Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs). • Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applications. • Examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistors. • Includes research problem statements with specifications and commercially available industry data in the appendix. • Presents Verilog-A model-based simulations for circuit analysis. The volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.

VLSI Electronics Microstructure Science

Author : Norman G. Einspruch
Publisher :
ISBN 13 : 9780122341182
Total Pages : 21 pages
Book Rating : 4.3/5 (411 download)

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Book Synopsis VLSI Electronics Microstructure Science by : Norman G. Einspruch

Download or read book VLSI Electronics Microstructure Science written by Norman G. Einspruch and published by . This book was released on 1989 with total page 21 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Hot-Carrier Effects in MOS Devices

Author : Eiji Takeda
Publisher : Elsevier
ISBN 13 : 0080926223
Total Pages : 329 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Hot-Carrier Effects in MOS Devices by : Eiji Takeda

Download or read book Hot-Carrier Effects in MOS Devices written by Eiji Takeda and published by Elsevier. This book was released on 1995-11-28 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject

Advanced High Voltage Power Device Concepts

Author : B. Jayant Baliga
Publisher : Springer Science & Business Media
ISBN 13 : 1461402697
Total Pages : 580 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Advanced High Voltage Power Device Concepts by : B. Jayant Baliga

Download or read book Advanced High Voltage Power Device Concepts written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2011-09-21 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: The devices described in “Advanced MOS-Gated Thyristor Concepts” are utilized in microelectronics production equipment, in power transmission equipment, and for very high power motor control in electric trains, steel-mills, etc. Advanced concepts that enable improving the performance of power thyristors are discussed here, along with devices with blocking voltage capabilities of 5,000-V, 10,000-V and 15,000-V. Throughout the book, analytical models are generated to allow a simple analysis of the structures and to obtain insight into the underlying physics. The results of two-dimensional simulations are provided to corroborate the analytical models and give greater insight into the device operation.

Advanced Power MOSFET Concepts

Author : B. Jayant Baliga
Publisher : Springer Science & Business Media
ISBN 13 : 1441959173
Total Pages : 573 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Advanced Power MOSFET Concepts by : B. Jayant Baliga

Download or read book Advanced Power MOSFET Concepts written by B. Jayant Baliga and published by Springer Science & Business Media. This book was released on 2010-06-26 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the last decade many new concepts have been proposed for improving the performance of power MOSFETs. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas. "Advanced Power MOSFET Concepts" provides an in-depth treatment of the physics of operation of advanced power MOSFETs. Analytical models for explaining the operation of all the advanced power MOSFETs will be developed. The results of numerical simulations will be provided to give additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and give greater insight into the device operation.

High Dielectric Constant Materials

Author : Howard Huff
Publisher : Springer Science & Business Media
ISBN 13 : 9783540210818
Total Pages : 740 pages
Book Rating : 4.2/5 (18 download)

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Book Synopsis High Dielectric Constant Materials by : Howard Huff

Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005 with total page 740 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.

Charge-Based MOS Transistor Modeling

Author : Christian C. Enz
Publisher : John Wiley & Sons
ISBN 13 : 0470855452
Total Pages : 328 pages
Book Rating : 4.4/5 (78 download)

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Book Synopsis Charge-Based MOS Transistor Modeling by : Christian C. Enz

Download or read book Charge-Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

Mosfet Modeling for Circuit Analysis and Design

Author :
Publisher :
ISBN 13 : 9814477974
Total Pages : pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Mosfet Modeling for Circuit Analysis and Design by :

Download or read book Mosfet Modeling for Circuit Analysis and Design written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Author : Jacopo Franco
Publisher : Springer Science & Business Media
ISBN 13 : 9400776632
Total Pages : 203 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by : Jacopo Franco

Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco and published by Springer Science & Business Media. This book was released on 2013-10-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

Nanoscale MOS Transistors

Author : David Esseni
Publisher : Cambridge University Press
ISBN 13 : 1139494384
Total Pages : 489 pages
Book Rating : 4.1/5 (394 download)

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Book Synopsis Nanoscale MOS Transistors by : David Esseni

Download or read book Nanoscale MOS Transistors written by David Esseni and published by Cambridge University Press. This book was released on 2011-01-20 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results

Classical and Object-oriented Software Engineering with UML and C++

Author : Stephen R. Schach
Publisher : McGraw-Hill Companies
ISBN 13 :
Total Pages : 658 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Classical and Object-oriented Software Engineering with UML and C++ by : Stephen R. Schach

Download or read book Classical and Object-oriented Software Engineering with UML and C++ written by Stephen R. Schach and published by McGraw-Hill Companies. This book was released on 1999 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Universal Modeling Language (UML) has become an industry standard in software engineering. In this text, it is used for object-oriented analysis and design as well as when diagrams depict objects and their interrelationships.

Advanced CMOS Process Technology

Author : J Pimbley
Publisher : Elsevier
ISBN 13 : 0323156800
Total Pages : 305 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Advanced CMOS Process Technology by : J Pimbley

Download or read book Advanced CMOS Process Technology written by J Pimbley and published by Elsevier. This book was released on 2012-12-02 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced CMOS Process Technology is part of the VLSI Electronics Microstructure Science series. The main topic of this book is complementary metal-oxide semiconductor or CMOS technology, which plays a significant part in the electronics systems. The topics covered in this book range from metallization, isolation techniques, reliability, and yield. The volume begins with an introductory chapter that discusses the microelectronics revolution of the 20th century. Then Chapter 2 puts focus on the CMOS devices and circuit background, discussing CMOS capacitors and field effect transistors. Metallization topics and concepts are covered in Chapter 3, while isolation techniques are tackled in Chapter 4. Long-term reliability of CMOS is the topic covered in Chapter 5. Finally, the ability of semiconductor technology to yield circuits is discussed in Chapter 6. The book is particularly addressed to engineers, scientists, and technical managers.

Fundamentals of Bias Temperature Instability in MOS Transistors

Author : Souvik Mahapatra
Publisher : Springer
ISBN 13 : 8132225082
Total Pages : 269 pages
Book Rating : 4.1/5 (322 download)

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Book Synopsis Fundamentals of Bias Temperature Instability in MOS Transistors by : Souvik Mahapatra

Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra and published by Springer. This book was released on 2015-08-05 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.

Advanced Semiconducting Materials and Devices

Author : K.M. Gupta
Publisher : Springer
ISBN 13 : 3319197584
Total Pages : 573 pages
Book Rating : 4.3/5 (191 download)

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Book Synopsis Advanced Semiconducting Materials and Devices by : K.M. Gupta

Download or read book Advanced Semiconducting Materials and Devices written by K.M. Gupta and published by Springer. This book was released on 2015-08-20 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the latest developments in semiconducting materials and devices, providing up-to-date information on the science, processes, and applications in the field. A wide range of topics are covered, including optoelectronic devices, metal–semiconductor junctions, heterojunctions, MISFETs, LEDs, semiconductor lasers, photodiodes, switching diodes, tunnel diodes, Gunn diodes, solar cells, varactor diodes, IMPATT diodes, and advanced semiconductors. Detailed attention is paid to advanced and futuristic materials. In addition, clear explanations are provided of, for example, electron theories, high-field effects, the Hall effect, transit-time effects, drift and diffusion, breakdown mechanisms, equilibrium and transient conditions, switching, and biasing. The book is designed to meet the needs of undergraduate engineering students and will also be very useful for postgraduate students; it will assist in preparation for examinations at colleges and universities and for other examinations in engineering. Practice questions are therefore presented in both essay and multiple choice format, and many solved examples and unsolved problems are included.