Advanced Cmos Process Technology

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Advanced CMOS Process Technology

Author : J Pimbley
Publisher : Elsevier
ISBN 13 : 0323156800
Total Pages : 305 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Advanced CMOS Process Technology by : J Pimbley

Download or read book Advanced CMOS Process Technology written by J Pimbley and published by Elsevier. This book was released on 2012-12-02 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced CMOS Process Technology is part of the VLSI Electronics Microstructure Science series. The main topic of this book is complementary metal-oxide semiconductor or CMOS technology, which plays a significant part in the electronics systems. The topics covered in this book range from metallization, isolation techniques, reliability, and yield. The volume begins with an introductory chapter that discusses the microelectronics revolution of the 20th century. Then Chapter 2 puts focus on the CMOS devices and circuit background, discussing CMOS capacitors and field effect transistors. Metallization topics and concepts are covered in Chapter 3, while isolation techniques are tackled in Chapter 4. Long-term reliability of CMOS is the topic covered in Chapter 5. Finally, the ability of semiconductor technology to yield circuits is discussed in Chapter 6. The book is particularly addressed to engineers, scientists, and technical managers.

VLSI Electronics: Advanced CMOS process technology

Author : Norman G. Einspruch
Publisher :
ISBN 13 : 9780122341199
Total Pages : 0 pages
Book Rating : 4.3/5 (411 download)

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Book Synopsis VLSI Electronics: Advanced CMOS process technology by : Norman G. Einspruch

Download or read book VLSI Electronics: Advanced CMOS process technology written by Norman G. Einspruch and published by . This book was released on 1981 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

ESD Protection Device and Circuit Design for Advanced CMOS Technologies

Author : Oleg Semenov
Publisher : Springer Science & Business Media
ISBN 13 : 1402083017
Total Pages : 237 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis ESD Protection Device and Circuit Design for Advanced CMOS Technologies by : Oleg Semenov

Download or read book ESD Protection Device and Circuit Design for Advanced CMOS Technologies written by Oleg Semenov and published by Springer Science & Business Media. This book was released on 2008-04-26 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.

Low Power Circuit Design Using Advanced CMOS Technology

Author : Milin Zhang
Publisher : CRC Press
ISBN 13 : 1000795020
Total Pages : 551 pages
Book Rating : 4.0/5 (7 download)

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Book Synopsis Low Power Circuit Design Using Advanced CMOS Technology by : Milin Zhang

Download or read book Low Power Circuit Design Using Advanced CMOS Technology written by Milin Zhang and published by CRC Press. This book was released on 2022-09-01 with total page 551 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Power Circuit Design Using Advanced CMOS Technology is a summary of lectures from the first Advanced CMOS Technology Summer School (ACTS) 2017. The slides are selected from the handouts, while the text was edited according to the lecturers talk.ACTS is a joint activity supported by the IEEE Circuit and System Society (CASS) and the IEEE Solid-State Circuits Society (SSCS). The goal of the school is to provide society members as well researchers and engineers from industry the opportunity to learn about new emerging areas from leading experts in the field. ACTS is an example of high-level continuous education for junior engineers, teachers in academe, and students. ACTS was the results of a successful collaboration between societies, the local chapter leaders, and industry leaders. This summer school was the brainchild of Dr. Zhihua Wang, with strong support from volunteers from both the IEEE SSCS and CASS. In addition, the local companies, Synopsys China and Beijing IC Park, provided support.This first ACTS was held in the summer 2017 in Beijing. The lectures were given by academic researchers and industry experts, who presented each 6-hour long lectures on topics covering process technology, EDA skill, and circuit and layout design skills. The school was hosted and organized by the CASS Beijing Chapter, SSCS Beijing Chapter, and SSCS Tsinghua Student Chapter. The co-chairs of the first ACTS were Dr. Milin Zhang, Dr. Hanjun Jiang and Dr. Liyuan Liu. The first ACTS was a great success as illustrated by the many participants from all over China as well as by the publicity it has been received in various media outlets, including Xinhua News, one of the most popular news channels in China.

Low Power Circuit Design Using Advanced CMOS Technology

Author : Milin Zhang
Publisher : River Publishers
ISBN 13 : 877022000X
Total Pages : 554 pages
Book Rating : 4.7/5 (72 download)

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Book Synopsis Low Power Circuit Design Using Advanced CMOS Technology by : Milin Zhang

Download or read book Low Power Circuit Design Using Advanced CMOS Technology written by Milin Zhang and published by River Publishers. This book was released on 2018-11-19 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Power Circuit Design Using Advanced CMOS Technology is a summary of lectures from the first Advanced CMOS Technology Summer School (ACTS) 2017. The slides are selected from the handouts, while the text was edited according to the lecturers talk. ACTS is a joint activity supported by the IEEE Circuit and System Society (CASS) and the IEEE Solid-State Circuits Society (SSCS). The goal of the school is to provide society members as well researchers and engineers from industry the opportunity to learn about new emerging areas from leading experts in the field. ACTS is an example of high-level continuous education for junior engineers, teachers in academe, and students. ACTS was the results of a successful collaboration between societies, the local chapter leaders, and industry leaders. This summer school was the brainchild of Dr. Zhihua Wang, with strong support from volunteers from both the IEEE SSCS and CASS. In addition, the local companies, Synopsys China and Beijing IC Park, provided support. This first ACTS was held in the summer 2017 in Beijing. The lectures were given by academic researchers and industry experts, who presented each 6-hour long lectures on topics covering process technology, EDA skill, and circuit and layout design skills. The school was hosted and organized by the CASS Beijing Chapter, SSCS Beijing Chapter, and SSCS Tsinghua Student Chapter. The co-chairs of the first ACTS were Dr. Milin Zhang, Dr. Hanjun Jiang and Dr. Liyuan Liu. The first ACTS was a great success as illustrated by the many participants from all over China as well as by the publicity it has been received in various media outlets, including Xinhua News, one of the most popular news channels in China.

Reliability Wearout Mechanisms in Advanced CMOS Technologies

Author : Alvin W. Strong
Publisher : John Wiley & Sons
ISBN 13 : 047045525X
Total Pages : 642 pages
Book Rating : 4.4/5 (74 download)

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Book Synopsis Reliability Wearout Mechanisms in Advanced CMOS Technologies by : Alvin W. Strong

Download or read book Reliability Wearout Mechanisms in Advanced CMOS Technologies written by Alvin W. Strong and published by John Wiley & Sons. This book was released on 2009-10-13 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.

Variation-Aware Advanced CMOS Devices and SRAM

Author : Changhwan Shin
Publisher : Springer
ISBN 13 : 9401775974
Total Pages : 140 pages
Book Rating : 4.4/5 (17 download)

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Book Synopsis Variation-Aware Advanced CMOS Devices and SRAM by : Changhwan Shin

Download or read book Variation-Aware Advanced CMOS Devices and SRAM written by Changhwan Shin and published by Springer. This book was released on 2016-06-06 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.

High-k Gate Dielectrics for CMOS Technology

Author : Gang He
Publisher : John Wiley & Sons
ISBN 13 : 3527646361
Total Pages : 560 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis High-k Gate Dielectrics for CMOS Technology by : Gang He

Download or read book High-k Gate Dielectrics for CMOS Technology written by Gang He and published by John Wiley & Sons. This book was released on 2012-08-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.

Low-Frequency Noise in Advanced MOS Devices

Author : Martin Haartman
Publisher : Springer Science & Business Media
ISBN 13 : 1402059108
Total Pages : 224 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Low-Frequency Noise in Advanced MOS Devices by : Martin Haartman

Download or read book Low-Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Advanced Short-time Thermal Processing for Si-based CMOS Devices 2

Author : Mehmet C. Öztürk
Publisher : The Electrochemical Society
ISBN 13 : 9781566774062
Total Pages : 444 pages
Book Rating : 4.7/5 (74 download)

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Book Synopsis Advanced Short-time Thermal Processing for Si-based CMOS Devices 2 by : Mehmet C. Öztürk

Download or read book Advanced Short-time Thermal Processing for Si-based CMOS Devices 2 written by Mehmet C. Öztürk and published by The Electrochemical Society. This book was released on 2004 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Technology of Integrated Circuits

Author : D. Widmann
Publisher : Springer Science & Business Media
ISBN 13 : 366204160X
Total Pages : 355 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Technology of Integrated Circuits by : D. Widmann

Download or read book Technology of Integrated Circuits written by D. Widmann and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 355 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to comprehensively record the authors’ authoritative knowledge and practical experience of IC manufacturing, including the tremendous developments of recent years. With its strong application orientation, this is a must-have book for professionals in semiconductor industries.

Advanced VLSI Technology

Author : Cherry Bhargava
Publisher : CRC Press
ISBN 13 : 1000793133
Total Pages : 245 pages
Book Rating : 4.0/5 (7 download)

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Book Synopsis Advanced VLSI Technology by : Cherry Bhargava

Download or read book Advanced VLSI Technology written by Cherry Bhargava and published by CRC Press. This book was released on 2022-09-01 with total page 245 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend in design and manufacturing of very large-scale integrated (VLSI) circuits is towards smaller devices on increasing wafer dimensions. VLSI is the inter-disciplinary science of the process of creating an integrated circuit (IC) by combining thousands of transistors into a single chip. VLSI design can reduce the area of the circuit, making it less expensive and requiring less power.The book gives an understanding of the underlying principles of the subject. It not only focuses on circuit design process obeying VLSI rules but also on technological aspects of prototyping and fabrication. All the clocking processes, interconnects, and circuits of CMOS are explained in this book in an understandable format. The book provides contents on VLSI Physical Design Automation, Design of VLSI Devices and also its Impact on Physical Design.The book is intended as a reference book for senior undergraduate, first-year post graduate students, researchers as well as academicians in VLSI design, electronics & electrical engineering, and materials science. The basics and applications of VLSI design from STA, PDA and VLSI Testing along with FPGA based Prototyping are covered in a comprehensive manner.The latest technology used in VLSI design is discussed along with the available tools for FPGA prototyping as well as ASIC design. Each unit contains technical questions with solutions at the end.Technical topics discussed in the book include: • Static Timing Analysis• CMOS Layout and Design rules• Physical Design Automation• Testing of VLSI Circuits• Software tools for Frontend and Backend design.

Scaling And Integration Of High-speed Electronics And Optomechanical Systems

Author : Willander Magnus
Publisher : World Scientific
ISBN 13 : 9813225416
Total Pages : 152 pages
Book Rating : 4.8/5 (132 download)

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Book Synopsis Scaling And Integration Of High-speed Electronics And Optomechanical Systems by : Willander Magnus

Download or read book Scaling And Integration Of High-speed Electronics And Optomechanical Systems written by Willander Magnus and published by World Scientific. This book was released on 2017-04-17 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt: Coined as the third revolution in electronics is under way; Manufacturing is going digital, driven by computing revolution, powered by MOS technology, in particular, by the CMOS technology and its development. In this book, the scaling challenges for CMOS: SiGe BiCMOS, THz and niche technology are covered; the first article looks at scaling challenges for CMOS from an industrial point of view (review of the latest innovations); the second article focuses on SiGe BiCMOS technologies (deals with high-speed up to the THz-region), and the third article reports on circuits associated with source/drain integration in 14 nm and beyond FinFET technology nodes. Followed by the last two articles on niche applications for emerging technologies: one deals with carbon nanotube network and plasmonics for the THz region carbon, while the other reviews the recent developments in integrated on-chip nano-optomechanical systems. Contents: PrefaceScaling Challenges for Advanced CMOS Devices (Ajey P Jacob, Ruilong Xie, Min Gyu Sung, Lars Liebmann, Rinus T P Lee and Bill Taylor)High-Speed SiGe BiCMOS Technologies and Circuits (A Mai, I Garcia Lopez, P Rito, R Nagulapalli, A Awny, M Elkhouly, M Eissa, M Ko, A Malignaggi, M Kucharski, H J Ng, K Schmalz and D Kissinger)Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs (Henry H Radamson, Jun Luo, Changliang Qin, Huaxiang Yin, Huilong Zhu, Chao Zhao and Guilei Wang)Dynamic Conductivity and Two-Dimensional Plasmons in Lateral CNT Networks (Maxim Ryzhii, Taiichi Otsuji, Victor Ryzhii, Vladimir Mitin, Michael S Shur, Georgy Fedorov and Vladimir Leiman)Integrated On-Chip Nano-Optomechanical Systems (Zhu Diao, Vincent T K Sauer and Wayne K Hiebert)Author Index Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields.

CMOS - MEMS

Author : Henry Baltes
Publisher : John Wiley & Sons
ISBN 13 : 352767506X
Total Pages : 610 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis CMOS - MEMS by : Henry Baltes

Download or read book CMOS - MEMS written by Henry Baltes and published by John Wiley & Sons. This book was released on 2013-03-26 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: This edition of 'CMOS-MEMS' was originally published in the successful series 'Advanced Micro & Nanosystems'. Here, the combination of the globally established, billion dollar chip mass fabrication technology CMOS with the fascinating and commercially promising new world of MEMS is covered from all angles. The book introduces readers to this fi eld and takes them from fabrication technologies and material charaterization aspects to the actual applications of CMOS-MEMS - a wide range of miniaturized physical, chemical and biological sensors and RF systems. Vital knowledge on circuit and system integration issues concludes this in-depth treatise, illustrating the advantages of combining CMOS and MEMS in the first place, rather than having a hybrid solution.

CMOS Front-End Materials and Process Technology: Volume 765

Author : Materials Research Society. Meeting
Publisher :
ISBN 13 :
Total Pages : 336 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis CMOS Front-End Materials and Process Technology: Volume 765 by : Materials Research Society. Meeting

Download or read book CMOS Front-End Materials and Process Technology: Volume 765 written by Materials Research Society. Meeting and published by . This book was released on 2003-09-12 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the future, because fundamental materials and process limits are being approached, continued transistor scaling will not be as straightforward. Future complementary metal-oxide semiconductor (MOS) transistors will require high-permittivity (high-k) gate dielectrics and metal gate electrodes, as well as low-resistance ultrashallow junctions, in order to meet the stringent specifications of the International Technology Roadmap for Semiconductors. Techniques to improve transconductance and drive current may also be required. Process integration issues must be solved, and reliability must be assured, before any new material or processing technique can be used in IC manufacture. A further complication is that the key challenges will differ according to application. This book reports research results from industry, government labs and academia covering a wide scope of front-end process issues for future CMOS technologies. Topics include: advanced materials and structures; high-k dielectrics; advanced gate stack materials; heterogeneous integration and strained Si technologies; ultrashallow junction technology; strained Si and source/drain technology; and laser annealing and silicide processes.

Nano-CMOS Circuit and Physical Design

Author : Ban Wong
Publisher : John Wiley & Sons
ISBN 13 : 0471678864
Total Pages : 413 pages
Book Rating : 4.4/5 (716 download)

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Book Synopsis Nano-CMOS Circuit and Physical Design by : Ban Wong

Download or read book Nano-CMOS Circuit and Physical Design written by Ban Wong and published by John Wiley & Sons. This book was released on 2005-04-08 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Author : Jacopo Franco
Publisher : Springer Science & Business Media
ISBN 13 : 9400776632
Total Pages : 203 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by : Jacopo Franco

Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco and published by Springer Science & Business Media. This book was released on 2013-10-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.