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Advanced Cmos Devices And Applications
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Book Synopsis Advanced CMOS Devices and Applications by : Yi Zhao
Download or read book Advanced CMOS Devices and Applications written by Yi Zhao and published by Mdpi AG. This book was released on 2024-01-18 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dive into the forefront of semiconductor technology with our Special Issue reprint entitled, "Advanced CMOS Devices and Applications." This compilation unites a spectrum of contributions from leading experts, offering a captivating exploration of the latest breakthroughs in semiconductor technology. Uncover groundbreaking insights into 3D-stacked transistors, advanced transistor and memory processing, high-mobility channels, and novel simulation results, showcasing the cutting-edge advancements in advanced CMOS transistors and emerging non-volatile memories. The collection spans diverse topics such as 3D power scaling, advanced transistor processing, and emerging non-volatile memories, providing readers with a comprehensive panorama of the state-of-the-art developments in semiconductor technology. Crafted by eminent researchers, these articles delve into critical challenges and unveil innovative solutions, contributing significantly to the ongoing discourse in the scientific community. Whether you are a seasoned researcher, industry professional, or an eager student keen on grasping the forefront of semiconductor technology, this Reprint stands as a valuable resource. Immerse yourself in the knowledge presented by experts who have shaped the discourse in this dynamic field.
Book Synopsis Variation-Aware Advanced CMOS Devices and SRAM by : Changhwan Shin
Download or read book Variation-Aware Advanced CMOS Devices and SRAM written by Changhwan Shin and published by Springer. This book was released on 2016-06-06 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.
Book Synopsis Advanced CMOS Process Technology by : J Pimbley
Download or read book Advanced CMOS Process Technology written by J Pimbley and published by Elsevier. This book was released on 2012-12-02 with total page 305 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced CMOS Process Technology is part of the VLSI Electronics Microstructure Science series. The main topic of this book is complementary metal-oxide semiconductor or CMOS technology, which plays a significant part in the electronics systems. The topics covered in this book range from metallization, isolation techniques, reliability, and yield. The volume begins with an introductory chapter that discusses the microelectronics revolution of the 20th century. Then Chapter 2 puts focus on the CMOS devices and circuit background, discussing CMOS capacitors and field effect transistors. Metallization topics and concepts are covered in Chapter 3, while isolation techniques are tackled in Chapter 4. Long-term reliability of CMOS is the topic covered in Chapter 5. Finally, the ability of semiconductor technology to yield circuits is discussed in Chapter 6. The book is particularly addressed to engineers, scientists, and technical managers.
Book Synopsis Wafer Level Reliability of Advanced CMOS Devices and Processes by : Yi Zhao
Download or read book Wafer Level Reliability of Advanced CMOS Devices and Processes written by Yi Zhao and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The definition from SEMATECH of wafer level reliability test is: a methodology to assess the reliability impact of tools and processes by testing mechanism-specific test structures under accelerated conditions during device processing. Because wafer level reliability test is the accelerated test, it owns some different characters with common long time test in terms of failure mechanisms, test procedures, life time prediction, test structures design and so on. In this book, all items of wafer level reliability of CMOS devices and processes will be discussed. The purpose of this book is to provide a good and urgently need reference on MOS device reliability. The authors discuss how to enhance the veracity of lifetime prediction and the effects to degrade the veracity deeply. Finally, a discussion of the problems with wafer level reliability in terms of the engineering applications and research is given.
Book Synopsis ESD Protection Device and Circuit Design for Advanced CMOS Technologies by : Oleg Semenov
Download or read book ESD Protection Device and Circuit Design for Advanced CMOS Technologies written by Oleg Semenov and published by Springer Science & Business Media. This book was released on 2008-04-26 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.
Book Synopsis Advanced CMOS-Compatible Semiconductor Devices 18 by : J. A. Martino
Download or read book Advanced CMOS-Compatible Semiconductor Devices 18 written by J. A. Martino and published by The Electrochemical Society. This book was released on 2018-05-04 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Reliability Issues and Design Solutions in Advanced CMOS Design by : Ankita Bansal
Download or read book Reliability Issues and Design Solutions in Advanced CMOS Design written by Ankita Bansal and published by . This book was released on 2016 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over decades, scientists have been scaling devices to increasingly smaller feature sizes for ever better performance of complementary metal-oxide semiconductor (CMOS) technology to meet requirements on speed, complexity, circuit density, power consumption and ultimately cost required by many advanced applications. However, going to these ultra-scaled CMOS devices also brings some drawbacks. Aging due to bias-temperature-instability (BTI) and Hot carrier injection (HCI) is the dominant cause of functional failure in large scale logic circuits. The aging phenomena, on top of process variations, translate into complexity and reduced design margin for circuits. Such issues call for "Design for Reliability". In order to increase the overall design efficiency, it is important to (i) study the impact of aging on circuit level along with the transistor level understanding (ii) calibrate the theoretical findings with measurement data (iii) implementing tools that analyze the impact of BTI and HCI reliability on circuit timing into VLSI design process at each stage. In this work, post silicon measurements of a 28nm HK-MG technology are done to study the effect of aging on Frequency Degradation of digital circuits. A novel voltage controlled ring oscillator (VCO) structure, developed by NIMO research group is used to determine the effect of aging mechanisms like NBTI, PBTI and SILC on circuit parameters. Accelerated aging mechanism is proposed to avoid the time consuming measurement process and extrapolation of data to the end of life thus instead of predicting the circuit behavior, one can measure it, within a short period of time. Finally, to bridge the gap between device level models and circuit level aging analysis, a System Level Reliability Analysis Flow (SyRA) developed by NIMO group, is implemented for a TSMC 65nm industrial level design to achieve one-step reliability prediction for digital design.
Book Synopsis Low Power Circuit Design Using Advanced CMOS Technology by : Milin Zhang
Download or read book Low Power Circuit Design Using Advanced CMOS Technology written by Milin Zhang and published by River Publishers. This book was released on 2018-11-19 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low Power Circuit Design Using Advanced CMOS Technology is a summary of lectures from the first Advanced CMOS Technology Summer School (ACTS) 2017. The slides are selected from the handouts, while the text was edited according to the lecturers talk. ACTS is a joint activity supported by the IEEE Circuit and System Society (CASS) and the IEEE Solid-State Circuits Society (SSCS). The goal of the school is to provide society members as well researchers and engineers from industry the opportunity to learn about new emerging areas from leading experts in the field. ACTS is an example of high-level continuous education for junior engineers, teachers in academe, and students. ACTS was the results of a successful collaboration between societies, the local chapter leaders, and industry leaders. This summer school was the brainchild of Dr. Zhihua Wang, with strong support from volunteers from both the IEEE SSCS and CASS. In addition, the local companies, Synopsys China and Beijing IC Park, provided support. This first ACTS was held in the summer 2017 in Beijing. The lectures were given by academic researchers and industry experts, who presented each 6-hour long lectures on topics covering process technology, EDA skill, and circuit and layout design skills. The school was hosted and organized by the CASS Beijing Chapter, SSCS Beijing Chapter, and SSCS Tsinghua Student Chapter. The co-chairs of the first ACTS were Dr. Milin Zhang, Dr. Hanjun Jiang and Dr. Liyuan Liu. The first ACTS was a great success as illustrated by the many participants from all over China as well as by the publicity it has been received in various media outlets, including Xinhua News, one of the most popular news channels in China.
Book Synopsis Smart CMOS Image Sensors and Applications by : Jun Ohta
Download or read book Smart CMOS Image Sensors and Applications written by Jun Ohta and published by CRC Press. This book was released on 2017-12-19 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Because of their high noise immunity and low static power supply drain, complementary metal-oxide-semiconductor (CMOS) devices produce less heat than other forms of logic and allow a high density of logic functions on a chip. These beneficial characteristics have fueled the use of CMOS image sensors in consumer electronics, robot vision, biotechnology, and medicine. With the introduction of smart functions in CMOS image sensors, even more versatile applications are now possible. Exploring this popular technology, Smart CMOS Image Sensors and Applications focuses on the smart functions implemented in CMOS image sensors as well as the applications of these sensors. After discussing the history of smart CMOS image sensors, the book describes the fundamental elements of CMOS image sensors. It covers some optoelectronic device physics and introduces typical CMOS image sensor structures, such as an active pixel sensor (APS). Subsequent chapters elucidate the functions and materials of smart CMOS image sensors and present examples of smart imaging. The final chapter explores various applications of smart CMOS image sensors. Several appendices supply a range of information on constants, illuminance, MOSFET characteristics, and optical resolution. This book provides a firm foundation in existing smart CMOS image sensor technology and applications, preparing you for the next phase of smart CMOS image sensors.
Book Synopsis Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 13 & Advanced CMOS-Compatible Semiconductor Devices 20 by : H. Jagannathan
Download or read book Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 13 & Advanced CMOS-Compatible Semiconductor Devices 20 written by H. Jagannathan and published by . This book was released on 2023 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 by : F. Roozeboom
Download or read book Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 written by F. Roozeboom and published by The Electrochemical Society. This book was released on 2019-05-17 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions includes papers based on presentations from the symposium "Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.
Book Synopsis High-k Gate Dielectrics for CMOS Technology by : Gang He
Download or read book High-k Gate Dielectrics for CMOS Technology written by Gang He and published by John Wiley & Sons. This book was released on 2012-08-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.
Book Synopsis Electrical Characterization of Advanced CMOS Devices by : Khaled Zakaria Ahmed
Download or read book Electrical Characterization of Advanced CMOS Devices written by Khaled Zakaria Ahmed and published by . This book was released on 1998 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis CMOS Nanoelectronics by : Nadine Collaert
Download or read book CMOS Nanoelectronics written by Nadine Collaert and published by CRC Press. This book was released on 2012-09-19 with total page 452 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and source/drain engineering, which have been considered challenges for the integration of FinFETs. The book also addresses circuit-related aspects, including the impact of variability on SRAM design, ESD design, and high-T operation. It discusses a new device concept: the junctionless nanowire FET.
Book Synopsis BiCMOS/CMOS Systems Design by : James Edgar Buchanan
Download or read book BiCMOS/CMOS Systems Design written by James Edgar Buchanan and published by McGraw-Hill Companies. This book was released on 1991 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced CMOS Cell Design by : Etienne Sicard
Download or read book Advanced CMOS Cell Design written by Etienne Sicard and published by McGraw Hill Professional. This book was released on 2007-03-02 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Take Advantage of Today's Most Sophisticated Techniques for Designing and Simulating Complex CMOS Integrated Circuits! An essential working tool for electronic circuit designers and students alike, Advanced CMOS Cell Design is a practice-based guide to today's most sophisticated design and simulation techniques for CMOS (complementary metal oxide semiconductor) integrated circuits. Written by two internationally renowned circuit designers, this outstanding book presents the state-of-the-art techniques required to design and simulate every type of CMOS integrated circuit. The reference contains unsurpassed coverage of deep-submicron to nanoscale technologies...SRAM, DRAM, EEPROM, and Flash...design of a simple microprocessor...configurable logic circuits...data converters... input/output...design rules... and much more. Packed with 100 detailed illustrations, Advanced CMOS Cell Design enables you to: Explore the latest embedded memory architectures Master the programming of logic circuits Get expert guidance on radio frequency (RF) circuit design Learn more about silicon on insulator (SOI) technologies Acquire a full range of circuit simulation tools This Advanced CMOS Circuit Design Toolkit Covers- • Deep-Submicron to Nanoscale Technologies • SRAM, DRAM, EEPROM, and Flash • Design of a Simple Microprocessor • Configurable Logic Circuits • Radio Frequency (RF) Circuit Design • Data Converters • Input/Output • Silicon on Insulator (SOI) Technologies • Impact of Nanotechnologies • Design Rules • Quick-Reference Sheets
Book Synopsis Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by : Jacopo Franco
Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco and published by Springer Science & Business Media. This book was released on 2013-10-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
