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Admittance Behavior In Gaas Schottky Impatt Diodes
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Book Synopsis Admittance Behavior in GaAs Schottky IMPATT Diodes by : O. Eknoyan
Download or read book Admittance Behavior in GaAs Schottky IMPATT Diodes written by O. Eknoyan and published by . This book was released on 1979 with total page 49 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report presents the results of efforts, all of which are related to ionization rate effects on the admittance behavior of Low-High-Low gallium-arsenide (LHL GaAs) Schottky IMPATT diodes. The analysis were made using an improved equivalent circuit model which was developed earlier. The effects of reported different ionization rates in GaAs as well as newly generated ones were calculated and compared with experimentally measured admittance data. Generally, good agreement has been obtained. It is observed that (i) at low currents, the resonant frequency is less that the cutoff frequency and (ii) at high currents, the admittance behavior is capacitive. The results also indicate the possible existence of injection mechanisms other than impact ionization which become most apparent at high fields and are influenced by crystal orientation.
Book Synopsis Small-signal Characteristics of Gallium Arsenide Schottky-Read IMPATT Diodes by : John Joseph Berenz
Download or read book Small-signal Characteristics of Gallium Arsenide Schottky-Read IMPATT Diodes written by John Joseph Berenz and published by . This book was released on 1977 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1981 with total page 788 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 1048 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaAs Schottky, Barrier Avalanche Diodes by : Nils Olov Johnson
Download or read book GaAs Schottky, Barrier Avalanche Diodes written by Nils Olov Johnson and published by . This book was released on 1973 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Experiments with GaAs Schottky Barrier IMPATT Diodes by : Koichi Nio
Download or read book Experiments with GaAs Schottky Barrier IMPATT Diodes written by Koichi Nio and published by . This book was released on 1972 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Proceedings written by and published by . This book was released on 1978 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Large-signal Analysis of the GaAs Schottky-barrier Lo-hi-lo IMPATT Diodes by : C. Ethelbert F. Fraser
Download or read book Large-signal Analysis of the GaAs Schottky-barrier Lo-hi-lo IMPATT Diodes written by C. Ethelbert F. Fraser and published by . This book was released on 1978 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Technical Bulletin - Texas Engineering Experiment Station by : Texas Engineering Experiment Station
Download or read book Technical Bulletin - Texas Engineering Experiment Station written by Texas Engineering Experiment Station and published by . This book was released on 1977 with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Experiments on High Power GaAs Schottky Barrier IMPATT Diodes for 12 GHz by : Koichi Nio
Download or read book Experiments on High Power GaAs Schottky Barrier IMPATT Diodes for 12 GHz written by Koichi Nio and published by . This book was released on 1975 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Effects of Delayed Secondary Avalanche Phenomena on the High Efficiency Operation GaAs Millimeter Wave IMPATT Diodes by : Glenn Richard Thoren
Download or read book The Effects of Delayed Secondary Avalanche Phenomena on the High Efficiency Operation GaAs Millimeter Wave IMPATT Diodes written by Glenn Richard Thoren and published by . This book was released on 1981 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Interface-state Measurements of GaAs Schottky Barriers Using Admittance Techniques by : Keith A. Christianson
Download or read book Interface-state Measurements of GaAs Schottky Barriers Using Admittance Techniques written by Keith A. Christianson and published by . This book was released on 1990 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt: A recent series of measurements has shown that the barrier height of Schottky diodes on GaAs may change under long term biasing conditions. The aging has been found to occur under reverse bias conditions with a logarithmic dependence on time. This study has been concerned with looking at the interface-state configuration of these diodes using admittance techniques to see if interface-state generation/destruction plays any role in this aging process. Two groups of diodes, Au/W/GaAs and Au/Pt/Ti/GaAs, were studied. Both of these diode types are contained within power MESFET structures. As has been reported elsewhere, the Au/W/GaAs, diodes exhibit pronounced aging effects, while the Au/Pt/Ti/GaAs diodes show this effect only slightly. Two variations of the admittance technique were tried. The first variation, which looked for conductance variations as a function of frequency, was not successful, presumably due to the relatively large values of conductance already present in these structures making small variations impossible to see. The second variation looked at forward bias capacitance using a specially modified bridge circuit which enabled the large conductance signal to be nulled out. In order to obtain the interface-state densities from the forward bias capacitance data several assumptions had to be made so that existing theory could be applied. The first of these was that the responsible species are donor interface-states which reside in the upper half of the bandgap. (SDW).
Book Synopsis 28th Electronic Components Conference, Disneyland Hotel, Anaheim, CA, April 24-26, 1978 by :
Download or read book 28th Electronic Components Conference, Disneyland Hotel, Anaheim, CA, April 24-26, 1978 written by and published by . This book was released on 1978 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Computer Simulation of a Schottky GaAs Impatt Diode by : Nadim Kafati
Download or read book Computer Simulation of a Schottky GaAs Impatt Diode written by Nadim Kafati and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Index to IEEE Publications by : Institute of Electrical and Electronics Engineers
Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1998 with total page 1234 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.
Book Synopsis Government Reports Announcements & Index by :
Download or read book Government Reports Announcements & Index written by and published by . This book was released on 1979 with total page 944 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis IMPATT Diodes Based on GaAs for Millimeter Wave Applications with Reference to Si by : Janmejaya Pradhan
Download or read book IMPATT Diodes Based on GaAs for Millimeter Wave Applications with Reference to Si written by Janmejaya Pradhan and published by . This book was released on 2018 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The small signal characteristics of DDR IMPATTs based on GaAs designed to operate at mm-wave window frequencies such as 94, 140, and 220,ÄâGHz are presented in this chapter. Both the DC and Small signal performance of the above-mentioned devices are investigated by using a small signal simulation technique developed by the authors. The efficiency, output power and power density of GaAs IMPATT is higher than that of Si IMPATT. Results show that the DDR IMPATTs based on GaAs are most suitable for generation of RF power with maximum conversion efficiency up to 220,ÄâGHz. The noise behavior of GaAs IMPATT yield less noise as compared to Si IMPATT.
