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A Theoretical Approach To The Calculation Of Annealed Impurity Profiles Of Ion Implanted Boron Into Silicon
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Book Synopsis A Theoretical Approach to the Calculation of Annealed Impurity Profiles of Ion Implanted Boron Into Silicon by : Stanford University. Stanford Electronics Laboratories
Download or read book A Theoretical Approach to the Calculation of Annealed Impurity Profiles of Ion Implanted Boron Into Silicon written by Stanford University. Stanford Electronics Laboratories and published by . This book was released on 1977 with total page 118 pages. Available in PDF, EPUB and Kindle. Book excerpt: A multi-stream diffusion model is proposed for te calculation of the annealing behavior of boron that is ion implanted into silicon at room temperature and subsequently annealed. This model is capable of predicting both the redistribution and the electrical activation of boron during the anneal, as a realistic model should. The calculated results compare very samples that are implanted at room temperature with boron in the dose range from 10 to the 14 power to 10 to the 16th power ions/sq cm and subsequently annealed in the temperature range from 800 C to 1000 C. This range of dose and annealing conditions includes both the typical applications of ion implantation as it is applied in the fabrication of devices nad the unconventional cases of high dose implants and low temperature annealing. (Author).
Book Synopsis Ion Implantation in Semiconductors 1976 by : Fred Chernow
Download or read book Ion Implantation in Semiconductors 1976 written by Fred Chernow and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1986 with total page 876 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1986-04 with total page 882 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Implantation in Microelectronics by : A. H. Agajanian
Download or read book Ion Implantation in Microelectronics written by A. H. Agajanian and published by Springer. This book was released on 1981-09-30 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the past ten years the use of ion implantation for doping semiconductors has become an active area of research and new device development. This doping technique has recently reached a level of maturity such that it is an integral step in the manu facturing of discrete semiconductor devices and integrated circuits. Ion implantation has significant advantages over diffusion such as: precision, purity, versatility, and automation; all of which are important for VLSI purposes. Ion implantation has also found new applications in magnetic bubble domain materials, superconductors, and materials synthesis. This book is a comprehensive bibliography of 2467 references of the world's literature on ion implantation as applied to micro electronics. This compilation will easily enable researchers to compare their work with that of others. For easy access to the needed references, the contents are divided into fifty-two subject headings. The main categories are: bibliographies, books and symposia, review articles, theory, materials, device applications, and equipment. An author index and a subject index are also given to provide easy access to the references. The literature from January 1976 to December 1980 is covered. The literature prior to 1976 is the subject, in part, of a previous book by the author (1). The main sources searched were: Physics Abstracts (PA) , Electrical and Electronics Abstracts (EEA) , Chemical Abstracts (CA) , Nuclear Science Abstracts (NSA) , and Engineering Index. The volumes and numbers of the abstracts are given to pro vide access to the abstracts.
Book Synopsis Process and Device Simulation for MOS-VLSI Circuits by : P. Antognetti
Download or read book Process and Device Simulation for MOS-VLSI Circuits written by P. Antognetti and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1973 with total page 1554 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Computer Aided Engineering of Semiconductor Integrated Circuits by : Stanford Electronics Laboratory
Download or read book Computer Aided Engineering of Semiconductor Integrated Circuits written by Stanford Electronics Laboratory and published by . This book was released on 1977 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this program are to remove the empiricism associated with the design and manufacturing of custom integrated circuits for military applications and to reduce the cost of these circuits by devising improved computer-aided engineering techniques. Efforts of research covered by this report are in the areas of (1) ion implantation and diffusion of dopants, (2) thermal oxidation, (3) chemical vapor deposition of silicon, and (4) device simulation and statistical circuit modeling. (Author).
Book Synopsis ERDA Energy Research Abstracts by : United States. Energy Research and Development Administration
Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration and published by . This book was released on with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :United States. Energy Research and Development Administration. Technical Information Center Publisher : ISBN 13 : Total Pages :588 pages Book Rating :4.3/5 (129 download)
Book Synopsis ERDA Energy Research Abstracts by : United States. Energy Research and Development Administration. Technical Information Center
Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration. Technical Information Center and published by . This book was released on 1976 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Oxide Studies by : Charles Pang-Hsin Ho
Download or read book Silicon Oxide Studies written by Charles Pang-Hsin Ho and published by . This book was released on 1978 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Journal of Research of the National Bureau of Standards by : United States. National Bureau of Standards
Download or read book Journal of Research of the National Bureau of Standards written by United States. National Bureau of Standards and published by . This book was released on 1988 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1972 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Library of Congress. Copyright Office Publisher :Copyright Office, Library of Congress ISBN 13 : Total Pages :1914 pages Book Rating :4.F/5 ( download)
Book Synopsis Catalog of Copyright Entries. Third Series by : Library of Congress. Copyright Office
Download or read book Catalog of Copyright Entries. Third Series written by Library of Congress. Copyright Office and published by Copyright Office, Library of Congress. This book was released on 1979 with total page 1914 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1976 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt:
