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Author : Richard Alan Stall
Publisher :
ISBN 13 :
Total Pages : 140 pages
Book Rating : 4.E/5 ( download)
Download or read book A Study of Deep Levels in GaAs by Deep Level Transient Spectroscopy written by Richard Alan Stall and published by . This book was released on 1979 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : F. Saleemi
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (643 download)
Download or read book Deep Level Transient Spectroscopy of GaAs (MBE) written by F. Saleemi and published by . This book was released on 1989 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. J. Hartnett
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (61 download)
Download or read book Uniaxial Stress/DLTS Studies on Deep Level Defects in N-GaAs written by S. J. Hartnett and published by . This book was released on 1997 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Fatemeh Taghizadeh
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (116 download)
Download or read book Electrical Characterization of Process Induced Defects in GaAs by Laplace Deep Level Transient Spectroscopy written by Fatemeh Taghizadeh and published by . This book was released on 2019 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this study, we investigated defects introduced in n-GaAs with different carrier densities by electron irradiation and sputter deposition by means of conventional deep level transient spectroscopy (DLTS) as well as high resolution Laplace deep-level transient spectroscopy (LDLTS). In electron-irradiated material, we found that the well-known E3 defect, of which the origin has long been under discussion, consisted of three components (E3a, E3b and E3c). By constructing Arrhenius plots and performing annealing studies, and by comparing our results with literature, we could deduce that the E3a, the main component of the E3 is related to the VAs, while the E3b is related to the Asi and the E3c was related to the VGa-SiGa. In addition, the E3c was metastable and had a concentration that increased linearly with doping concentration. Further electrical characterization included I-V and C-V measurements, as well as measurements of the introduction rate, metastability, electric field emission mechanisms and capture cross-sections. For the sputter-deposited Schottky contacts, DLTS depth profiles showed that the defects were confined close to the surface and that their depth range depended strongly on the doping concentration, and corresponded roughly with the depletion depth of the Schottky diodes. We conclude that the diffusion of these defects was stronlgy enhanced by the conditions (free carrier density and electric field) in the depletion region. Six defects (S1, S2, S3, S4, S5 and S6) were observed by conventional DLTS and were further investigated by L-DLTS. One of these defects, the S6, could be split into two components while three of them (S1, S3 and S5) were metastable. The transformation kinetics of the metastable defects were investigated and we conclude that the prefactor of S5 to S3 transformation was related to free carrier emission but for the S3 to S5 transformation is larger than would be expected. The activation energy of these transformations was similar to that required for arsenic vacancy (VAs) diffusion. The real capture cross sections as well as capture barriers were measured for the S3, S4 and S5 defects.
Author : John Sydney Blakemore
Publisher : Springer Science & Business Media
ISBN 13 : 9780883185254
Total Pages : 422 pages
Book Rating : 4.1/5 (852 download)
Download or read book Gallium Arsenide written by John Sydney Blakemore and published by Springer Science & Business Media. This book was released on 1987 with total page 422 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Amalia Patane
Publisher : Springer Science & Business Media
ISBN 13 : 3642233511
Total Pages : 384 pages
Book Rating : 4.6/5 (422 download)
Download or read book Semiconductor Research written by Amalia Patane and published by Springer Science & Business Media. This book was released on 2012-04-12 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book describes the fundamentals, latest developments and use of key experimental techniques for semiconductor research. It explains the application potential of various analytical methods and discusses the opportunities to apply particular analytical techniques to study novel semiconductor compounds, such as dilute nitride alloys. The emphasis is on the technique rather than on the particular system studied.
Author : Ikegami
Publisher : CRC Press
ISBN 13 : 9780750302500
Total Pages : 1002 pages
Book Rating : 4.3/5 (25 download)
Download or read book Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Author : Ding-Yuan Samuel Day
Publisher :
ISBN 13 :
Total Pages : 310 pages
Book Rating : 4.:/5 (227 download)
Download or read book Studies of Electron Traps in Gallium Arsenide and Gallium Arsenide Phosphide by Deep Level Transient Spectroscopy written by Ding-Yuan Samuel Day and published by . This book was released on 1980 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: System effects and data analysis for deep level transient spectroscopy (DLTS) have been examined and applied to study the deel levels in the GaAs-GaP system. Studies of typical DLTS systems using either the lock-in amplifier or the dual-channel boxcar averager are presented. The effects of non-zero gate width for the boxcar averager, phase angle adjustment for the lock-in amplifier, and response time of a typical commercial capacitance meter are investigated. Errors introduced in the measurements by these effects are calculated for typical cases. Measurements of gold level in silicon are presented, along with calculated corrections. We find the correction to be minimal in the boxcar-averager method, but significant in the lock-in amplifier approach. A DLTS system is described for measuring deep levels in diodes exhibiting large leakage currents. A capacitance bridge is used employing the diode to be tested along with a dummy diode of similar characteristics. The DLTS spectrum of a leaky GaAs planar diode is measured and compared to experimental results obtained with two standard DLTS systems . It is shown that measurements with the standard systems are impossible in certain temperature ranges because of overloading problems. The approach described here, however, gives the DLTS spectrum between 77 K and 300 K.
Author :
Publisher :
ISBN 13 :
Total Pages : 1108 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1986 with total page 1108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zenan Jiang
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (112 download)
Download or read book Deep Level Transient Spectroscopy Measurements of GaAsBi/GaAs written by Zenan Jiang and published by . This book was released on 2010 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bismuth incorporation in GaAs produces a much larger reduction in the band gap than In or Sb alloying, for the same increase in lattice constant. However, Bi is incorporated only at growth temperatures (Tg)
Author :
Publisher :
ISBN 13 :
Total Pages : 620 pages
Book Rating : 4.:/5 (31 download)
Download or read book The GEC Journal of Research written by and published by . This book was released on 1988 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : K. Sumino
Publisher : Elsevier
ISBN 13 : 0444600647
Total Pages : 817 pages
Book Rating : 4.4/5 (446 download)
Download or read book Defect Control in Semiconductors written by K. Sumino and published by Elsevier. This book was released on 2012-12-02 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Author : Peter W. Epperlein
Publisher : John Wiley & Sons
ISBN 13 : 1118481860
Total Pages : 522 pages
Book Rating : 4.1/5 (184 download)
Download or read book Semiconductor Laser Engineering, Reliability and Diagnostics written by Peter W. Epperlein and published by John Wiley & Sons. This book was released on 2013-01-25 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This reference book provides a fully integrated novel approach to the development of high-power, single-transverse mode, edge-emitting diode lasers by addressing the complementary topics of device engineering, reliability engineering and device diagnostics in the same book, and thus closes the gap in the current book literature. Diode laser fundamentals are discussed, followed by an elaborate discussion of problem-oriented design guidelines and techniques, and by a systematic treatment of the origins of laser degradation and a thorough exploration of the engineering means to enhance the optical strength of the laser. Stability criteria of critical laser characteristics and key laser robustness factors are discussed along with clear design considerations in the context of reliability engineering approaches and models, and typical programs for reliability tests and laser product qualifications. Novel, advanced diagnostic methods are reviewed to discuss, for the first time in detail in book literature, performance- and reliability-impacting factors such as temperature, stress and material instabilities. Further key features include: practical design guidelines that consider also reliability related effects, key laser robustness factors, basic laser fabrication and packaging issues; detailed discussion of diagnostic investigations of diode lasers, the fundamentals of the applied approaches and techniques, many of them pioneered by the author to be fit-for-purpose and novel in the application; systematic insight into laser degradation modes such as catastrophic optical damage, and a wide range of technologies to increase the optical strength of diode lasers; coverage of basic concepts and techniques of laser reliability engineering with details on a standard commercial high power laser reliability test program. Semiconductor Laser Engineering, Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference book is suited to practising researchers in diode laser technologies, and to postgraduate engineering students.
Author :
Publisher :
ISBN 13 :
Total Pages : 444 pages
Book Rating : 4.0/5 ( download)
Download or read book Energy Research Abstracts written by and published by . This book was released on 1994 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. S. Harris
Publisher : CRC Press
ISBN 13 :
Total Pages : 672 pages
Book Rating : 4.F/5 ( download)
Download or read book Gallium Arsenide and Related Compounds 1988, Proceedings of the 15th INT Symposium, Atlanta, Georgia, September 1988 written by J. S. Harris and published by CRC Press. This book was released on 1989 with total page 672 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings cover gallium arsenide and related compounds. They provide an overview of research into materials growth and characterization, discrete device physics and processing technology, epitaxial growth and ion implantation. For researchers in physics, materials science, electronics and electrical engineering.
Author : S. N. G. Chu
Publisher : The Electrochemical Society
ISBN 13 : 9781566771498
Total Pages : 408 pages
Book Rating : 4.7/5 (714 download)
Download or read book Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII) written by S. N. G. Chu and published by The Electrochemical Society. This book was released on 1997 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J.S. Williams
Publisher : Newnes
ISBN 13 : 0444599746
Total Pages : 1157 pages
Book Rating : 4.4/5 (445 download)
Download or read book Ion Beam Modification of Materials written by J.S. Williams and published by Newnes. This book was released on 2012-12-02 with total page 1157 pages. Available in PDF, EPUB and Kindle. Book excerpt: This conference consisted of 15 oral sessions, including three plenary papers covering areas of general interest, 22 specialist invited papers and 51 contributed presentations as well as three poster sessions. There were several scientific highlights covering a diverse spectrum of materials and ion beam processing methods. These included a wide range of conventional and novel applications such as: optical displays and opto-electronics, motor vehicle and tooling parts, coatings tailored for desired properties, studies of fundamental defect properties, the production of novel (often buried) compounds, and treating biomedical materials. The study of nanocrystals produced by ion implantation in a range of host matrices, particularly for opto-electronics applications, was one especially new and exciting development. Despite several decades of study, major progress was reported at the conference in understanding defect evolution in semiconductors and the role of defects in transient impurity diffusion. The use of implantation to tune or isolate optical devices and in forming optically active centres and waveguides in semiconductors, polymers and oxide ceramics was a major focus of several presentations at the conference. The formation of hard coatings by ion assisted deposition or direct implantation was also an area which showed much recent progress. Ion beam techniques had also developed apace, particularly those based on plasma immersion ion implantation or alternative techniques for large area surface treatment. Finally, the use of ion beams for the direct treatment of cancerous tissue was a particularly novel and interesting application of ion beams.
