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A Model Of Amorphous Silicon Layer Regrowth
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Book Synopsis Amorphous Silicon And Related Materials (In 2 Parts) by : Hellmut Fritzsche
Download or read book Amorphous Silicon And Related Materials (In 2 Parts) written by Hellmut Fritzsche and published by World Scientific. This book was released on 1989-01-01 with total page 1153 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the most recent important ideas and developments in the field of Hydrogenated Amorphous Silicon and related materials. Each contribution is authored by an outstanding expert in that particular area.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1992-10 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Book Synopsis Hydrogenated Amorphous Silicon by : R. A. Street
Download or read book Hydrogenated Amorphous Silicon written by R. A. Street and published by Cambridge University Press. This book was released on 2005-09-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Divided roughly into two parts, the book describes the physical properties and device applications of hydrogenated amorphous silicon. The first section is concerned with the atomic and electronic structure, and covers growth defects and doping and defect reactions. The emphasis is on the optical and electronic properties that result from the disordered structure. The second part of the book describes electronic conduction, recombination, interfaces, and multilayers. The special attribute of a-Si:H which makes it useful is the ability to deposit the material inexpensively over large areas, while retaining good semiconducting properties, and the final chapter discusses various applications and devices.
Book Synopsis Handbook of Surfaces and Interfaces of Materials, Five-Volume Set by : Hari Singh Nalwa
Download or read book Handbook of Surfaces and Interfaces of Materials, Five-Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-10-26 with total page 1915 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook brings together, under a single cover, all aspects of the chemistry, physics, and engineering of surfaces and interfaces of materials currently studied in academic and industrial research. It covers different experimental and theoretical aspects of surfaces and interfaces, their physical properties, and spectroscopic techniques that have been applied to a wide class of inorganic, organic, polymer, and biological materials. The diversified technological areas of surface science reflect the explosion of scientific information on surfaces and interfaces of materials and their spectroscopic characterization. The large volume of experimental data on chemistry, physics, and engineering aspects of materials surfaces and interfaces remains scattered in so many different periodicals, therefore this handbook compilation is needed.The information presented in this multivolume reference draws on two decades of pioneering research on the surfaces and interfaces of materials to offer a complete perspective on the topic. These five volumes-Surface and Interface Phenomena; Surface Characterization and Properties; Nanostructures, Micelles, and Colloids; Thin Films and Layers; Biointerfaces and Applications-provide multidisciplinary review chapters and summarize the current status of the field covering important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniques with contributions from internationally recognized experts from all over the world. Fully cross-referenced, this book has clear, precise, and wide appeal as an essential reference source long due for the scientific community. The complete reference on the topic of surfaces and interfaces of materialsThe information presented in this multivolume reference draws on two decades of pioneering researchProvides multidisciplinary review chapters and summarizes the current status of the fieldCovers important scientific and technological developments made over past decades in surfaces and interfaces of materials and spectroscopic techniquesContributions from internationally recognized experts from all over the world
Author :Wilfried G. J. H. M. van Sark Publisher :Springer Science & Business Media ISBN 13 :3642222757 Total Pages :588 pages Book Rating :4.6/5 (422 download)
Book Synopsis Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells by : Wilfried G. J. H. M. van Sark
Download or read book Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells written by Wilfried G. J. H. M. van Sark and published by Springer Science & Business Media. This book was released on 2011-11-16 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.
Book Synopsis High-rate growth of hydrogenated amorphous and microcrystalline silicon for thin-film silicon solar cells using dynamic very-high frequency plasma-enhanced chemical vapor deposition by : Thomas Zimmermann
Download or read book High-rate growth of hydrogenated amorphous and microcrystalline silicon for thin-film silicon solar cells using dynamic very-high frequency plasma-enhanced chemical vapor deposition written by Thomas Zimmermann and published by Forschungszentrum Jülich. This book was released on 2013 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 by : Fred Roozeboom
Download or read book Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2 written by Fred Roozeboom and published by The Electrochemical Society. This book was released on 2006 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Book Synopsis Ion Implantation Technology - 94 by : S. Coffa
Download or read book Ion Implantation Technology - 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters.The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Book Synopsis Silicon-Molecular Beam Epitaxy by : E. Kasper
Download or read book Silicon-Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Book Synopsis Growth of Crystals by : E. Givargizov
Download or read book Growth of Crystals written by E. Givargizov and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present volume continues the tradition of previous issues in covering all the main divisions in the science of crystal growth: growth from vapor, solution, and melt. At the same time, it reflects the recent tendency to more detailed research on solid -state crystal lization. In compiling the collection, preference has been given to papers that not only present novel scientific results but also contain surveys of the published data, although certain of the papers are purely original ones and some are purely of review character. The need for these surveys is dictated by at least two circumstances. First, there is an ongoing expan sion of specialized publications on crystal growth and, correspondingly, there is an increase in the volume of the publications requiring review. Second, rapid advances in crystal mak ing for various purposes (particularly microelectronics and quantum electronics) have meant that many important facts and observations on crystal formation are dispersed in numerous unspecialized publications and thus in part are lost to fundamental science.
Book Synopsis Oriented Crystallization on Amorphous Substrates by : E.I. Givargizov
Download or read book Oriented Crystallization on Amorphous Substrates written by E.I. Givargizov and published by Springer Science & Business Media. This book was released on 2013-11-21 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: Present-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.
Book Synopsis Silicides for VLSI Applications by : Shyam P. Murarka
Download or read book Silicides for VLSI Applications written by Shyam P. Murarka and published by Academic Press. This book was released on 2012-12-02 with total page 213 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the subject matter of this book has previously been available only in the form of research papers and review articles. I have not attempted to refer to all the published papers. The reader may find it advantageous to refer to the references listed.
Book Synopsis Microelectronic Materials and Processes by : Roland Levy
Download or read book Microelectronic Materials and Processes written by Roland Levy and published by Springer Science & Business Media. This book was released on 1989-01-31 with total page 1006 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.
Book Synopsis Semiconductor Nanocrystals and Metal Nanoparticles by : Tupei Chen
Download or read book Semiconductor Nanocrystals and Metal Nanoparticles written by Tupei Chen and published by CRC Press. This book was released on 2016-10-14 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanocrystals and metal nanoparticles are the building blocks of the next generation of electronic, optoelectronic, and photonic devices. Covering this rapidly developing and interdisciplinary field, the book examines in detail the physical properties and device applications of semiconductor nanocrystals and metal nanoparticles. It begins with a review of the synthesis and characterization of various semiconductor nanocrystals and metal nanoparticles and goes on to discuss in detail their optical, light emission, and electrical properties. It then illustrates some exciting applications of nanoelectronic devices (memristors and single-electron devices) and optoelectronic devices (UV detectors, quantum dot lasers, and solar cells), as well as other applications (gas sensors and metallic nanopastes for power electronics packaging). Focuses on a new class of materials that exhibit fascinating physical properties and have many exciting device applications. Presents an overview of synthesis strategies and characterization techniques for various semiconductor nanocrystal and metal nanoparticles. Examines in detail the optical/optoelectronic properties, light emission properties, and electrical properties of semiconductor nanocrystals and metal nanoparticles. Reviews applications in nanoelectronic devices, optoelectronic devices, and photonic devices.
Book Synopsis Ion Beam Assisted Film Growth by : T. Itoh
Download or read book Ion Beam Assisted Film Growth written by T. Itoh and published by Elsevier. This book was released on 2012-12-02 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume provides up to date information on the experimental, theoretical and technological aspects of film growth assisted by ion beams. Ion beam assisted film growth is one of the most effective techniques in aiding the growth of high-quality thin solid films in a controlled way. Moreover, ion beams play a dominant role in the reduction of the growth temperature of thin films of high melting point materials. In this way, ion beams make a considerable and complex contribution to film growth. The volume will be essential reading for scientists, engineers and students working in this field.
Book Synopsis Thin Film Growth Techniques for Low-Dimensional Structures by : R.F.C. Farrow
Download or read book Thin Film Growth Techniques for Low-Dimensional Structures written by R.F.C. Farrow and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growing layer can be continuously monitored using reflection high energy electron diffraction (RHEED). This technique has offered a rare bonus in that the time dependent intensity variations of RHEED can be used to determine growth rates and alloy composition rather precisely. Indeed, a great deal of new information about the kinetics of crystal growth from the vapour phase is beginning to emerge.
