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500 Nm Semipolar Gan Based Laser Diodes
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Book Synopsis 500 Nm Semipolar GaN-based Laser Diodes by : Anurag Tyagi
Download or read book 500 Nm Semipolar GaN-based Laser Diodes written by Anurag Tyagi and published by . This book was released on 2011 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last few years the availability of nonpolar/semipolar bulk GaN substrates has spurred intense research efforts towards the realization of novel GaN-based optoelectronic devices. Growth of (Al, In, Ga)N heterostructures on non-basal planes of wurtzite GaN leads to reduced/absent polarization-related internal electric fields and consequently, offers the possibility of improved device performance.
Author :Wolfgang G. Scheibenzuber Publisher :Springer Science & Business Media ISBN 13 :3642245374 Total Pages :107 pages Book Rating :4.6/5 (422 download)
Book Synopsis GaN-Based Laser Diodes by : Wolfgang G. Scheibenzuber
Download or read book GaN-Based Laser Diodes written by Wolfgang G. Scheibenzuber and published by Springer Science & Business Media. This book was released on 2012-01-03 with total page 107 pages. Available in PDF, EPUB and Kindle. Book excerpt: The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
Book Synopsis The Blue Laser Diode by : Shuji Nakamura
Download or read book The Blue Laser Diode written by Shuji Nakamura and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 1993, the author, Shuji Nakamura developed the first commercially available blue and green light-emitting diodes. Now he has made the most important breakthrough in solid state laser techniques to date - the first blue semiconductor laser based on GaN. Here, Dr. Nakamura discusses the physical concept and basic manufacturing technology of these new blue light-emitting and laser diodes. he shows how this represents a new era in commercial applications for semiconductors, including displays, road and railway signalling, lighting, scanners, optical data storage, and much more. Moreover, Nakamura provides fascinating background information on the extraordinary realisation of an extremely successful concept of research and development. Of interest to researchers as well as engineers.
Book Synopsis The Blue Laser Diode by : Shuji Nakamura
Download or read book The Blue Laser Diode written by Shuji Nakamura and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 373 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the reviews of the first edition: "The technical chapters will be lapped up by semiconductor specialists keen to know more [...] the book includes fascinating material that answers the question: why did Nakamura succeed where many, much larger, research groups failed." New Scientist
Book Synopsis Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications by : Luca Redaelli
Download or read book Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications written by Luca Redaelli and published by Cuvillier Verlag. This book was released on 2013-12-11 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, several aspects concerning (In,Al,Ga)N laser diodes with high spectral purity, designed for applications in spectroscopy, were studied. A complete fabrication process for ridgewaveguide laser diodes on GaN substrate was developed. The lateral size of the ridge waveguides was as narrow as 1.5 μm: this is necessary in order to achieve lateral single-mode lasing in (In,Al,Ga)N laser diodes. A peculiar property of (In,Al,Ga)N laser diodes is that, when the ridge is narrow, the threshold current strongly depends on the ridge etch depth. This phenomenon was investigated by fabricating laser diodes with different etch depths. For ridge widths below 2 μm, the threshold current of shallow-ridge devices was found to be more than two times larger than that of comparable deep-ridge devices. Moreover, in the lateral far-field patterns of shallow-ridge laser diodes, side-lobes were observed, which would support the hypothesis of strong index-antiguiding. The antiguiding factor at threshold was experimentally determined to be about 10, which is among the largest values ever published for (In,Al,Ga)N laser diodes. The devices were further studied by simulation, and the results confirmed that the carrier-induced index change in the quantum wells can compensate the lateral index step if the ridge is shallow. This, in turn, reduces the lateral optical confi nement, which increases the threshold current and generates side lobes in the far-fi eld patterns. Based on this research, blue and violet laser diodes suitable for packaging in TO cans and continuous-wave (CW) operation exceeding 50 mW were fabricated. An external cavity diode laser (ECDL) was also realized, which could be tuned over the spectral range 435 nm - 444 nm and provided a peak emission power of more than 27 mW CW at 439 nm. As an alternative approach to obtain a narrow spectral linewidth, the feasibility of monolithically integrated Bragg-gratings was studied.
Book Synopsis MOCVD Growth and Characterization of Nonpolar and Semipolar GaN-based Green Laser Diodes by : You-Da Lin
Download or read book MOCVD Growth and Characterization of Nonpolar and Semipolar GaN-based Green Laser Diodes written by You-Da Lin and published by . This book was released on 2010 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt: Direct emission green laser diodes (LDs) have been drawing significant attention as a compact and efficient light source for pico-projector and LD display applications. GaN-based LDs are promising candidates for blue and green LDs. Unlike LDs grown on c-plane GaN, LDs grown on nonpolar or semipolar GaN substrates have no or less polarization - induced electric fields in the quantum wells leading to the possibility of better device performance.
Book Synopsis Design, Growth and Fabrication of Nitride-based Semipolar (20-2-1) Laser Diodes by : Chia-Yen Huang
Download or read book Design, Growth and Fabrication of Nitride-based Semipolar (20-2-1) Laser Diodes written by Chia-Yen Huang and published by . This book was released on 2012 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polishing and dry-etching were applied on the backside surface after lapping to improve the contact characteristics. To suppress the morphologies, InGaN/GaN superlattices were used as guiding layers instead of conventional bulk InGaN layers. Semipolar (20-2-1) laser diodes with lasing wavelength up to 505 nm were demonstrated with 4 nm blueshift between the spontaneous emission and lasing.
Book Synopsis Diode Lasers and Photonic Integrated Circuits by : Larry A. Coldren
Download or read book Diode Lasers and Photonic Integrated Circuits written by Larry A. Coldren and published by John Wiley & Sons. This book was released on 2012-03-02 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book will offer brand new and updated material on GaN-based and quantum-dot lasers, photonic IC technology, detectors, modulators and SOAs, DVDs and storage, eye diagrams and BER concepts, and DFB lasers. Appendices will also be expanded to include quantum-dot issues and more on the relation between spontaneous emission and gain.
Book Synopsis Analysis of Gain and Absorption Spectra of GaN-based Laser Diodes by : Thiago Pantaleao Melo
Download or read book Analysis of Gain and Absorption Spectra of GaN-based Laser Diodes written by Thiago Pantaleao Melo and published by . This book was released on 2012 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: Elimination or mitigation of polarization-related fields within the QWs grown along these novel orientations is observed and one expects increased radiative recombination rate and stabilization of the wavelength emission with respect to the injection current. In order to have more insights on the advantages of using the novel crystal orientations of the III-Nitride material system, we compare the gain of LD structures fabricated from c-plane, nonpolar and semipolar GaN substrates.
Book Synopsis Long Wavelength GaN Blue Laser (400-490nm) Development by :
Download or read book Long Wavelength GaN Blue Laser (400-490nm) Development written by and published by . This book was released on 2000 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Room temperature (RT) pulsed operation of blue nitride based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates was achieved. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In{sub 0.21}Ga{sub 0.79}N (2.5nm)/In{sub 0.07}Ga{sub 0.93}N (5nm) InGaN MQW. The threshold current density was reduced by a factor of 2 from 10 kA/cm2 for laser diodes grown on sapphire substrates to 4.8 kA/cm2 for laser diodes grown on lateral epitaxial overgrowth (LEO) GaN on sapphire. Lasing wavelengths as long as 425nm were obtained. LEDs with emission wavelengths as long as 500nm were obtained by increasing the Indium content. These results show that a reduction in nonradiative recombination from a reduced dislocation density leads to a higher internal quantum efficiency. Further research on GaN based laser diodes is needed to extend the wavelength to 490nm which is required for numerous bio-detection applications. The GaN blue lasers will be used to stimulate fluorescence in special dye molecules when the dyes are attached to specific molecules or microorganisms. Fluorescein is one commonly used dye molecule for chemical and biological warfare agent detection, and its optimal excitation wavelength is 490 nm. InGaN alloys can be used to reach this wavelength.
Book Synopsis Ohmic Backside Contact for Nonpolar/semipolar GaN-based Cleaved-facet Green Laser Diodes by : Chia-Lin Hsiung
Download or read book Ohmic Backside Contact for Nonpolar/semipolar GaN-based Cleaved-facet Green Laser Diodes written by Chia-Lin Hsiung and published by . This book was released on 2010 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Laser Diode Microsystems by : Hans Zappe
Download or read book Laser Diode Microsystems written by Hans Zappe and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser Diode Microsystems provides the reader with the basic knowledge and understanding required for using semiconductor laser diodes in optical microsystems and micro-optical electromechanic systems. This tutorial addresses the fundamentals of semiconductor laser operation and design, coupled with an overview of the types of laser diodes suitable for use in Microsystems, along with their distinguishing characteristics. Emphasis is placed on laser diode characterization and measurement as well as the assembly techniques and optical accessories required for incorporation of semiconductor lasers into complex microsystems. Equipped with typical results and calculation examples, this hand-on text helps readers to develop a feel for how to choose a laser diode, characterize it and incorporate it into a microsystem.
Book Synopsis Semiconductor Lasers by : Alexei Baranov
Download or read book Semiconductor Lasers written by Alexei Baranov and published by Elsevier. This book was released on 2013-04-23 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor lasers have important applications in numerous fields, including engineering, biology, chemistry and medicine. They form the backbone of the optical telecommunications infrastructure supporting the internet, and are used in information storage devices, bar-code scanners, laser printers and many other everyday products. Semiconductor lasers: Fundamentals and applications is a comprehensive review of this vital technology. Part one introduces the fundamentals of semiconductor lasers, beginning with key principles before going on to discuss photonic crystal lasers, high power semiconductor lasers and laser beams, and the use of semiconductor lasers in ultrafast pulse generation. Part two then reviews applications of visible and near-infrared emitting lasers. Nonpolar and semipolar GaN-based lasers, advanced self-assembled InAs quantum dot lasers and vertical cavity surface emitting lasers are all considered, in addition to semiconductor disk and hybrid silicon lasers. Finally, applications of mid- and far-infrared emitting lasers are the focus of part three. Topics covered include GaSb-based type I quantum well diode lasers, interband cascade and terahertz quantum cascade lasers, whispering gallery mode lasers and tunable mid-infrared laser absorption spectroscopy. With its distinguished editors and international team of expert contributors, Semiconductor lasers is a valuable guide for all those involved in the design, operation and application of these important lasers, including laser and telecommunications engineers, scientists working in biology and chemistry, medical practitioners, and academics working in this field. Provides a comprehensive review of semiconductor lasers and their applications in engineering, biology, chemistry and medicine Discusses photonic crystal lasers, high power semiconductor lasers and laser beams, and the use of semiconductor lasers in ultrafast pulse generation Reviews applications of visible and near-infrared emitting lasers and mid- and far-infrared emitting lasers
Book Synopsis Nonpolar M-plane GaN-based Laser Diodes in the Blue Spectrum by : Kathryn Merced Kelchner
Download or read book Nonpolar M-plane GaN-based Laser Diodes in the Blue Spectrum written by Kathryn Merced Kelchner and published by . This book was released on 2012 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN), together with its alloys with aluminum and indium, have revolutionized the solid-state optoelectronics market for their ability to emit a large portion of the visible electromagnetic spectrum from deep ultraviolet and into the infrared. GaN-based semiconductor laser diodes (LDs) with emission wavelengths in the violet, blue and green are already seeing widespread implementation in applications ranging from energy storage, lighting and displays. However, commercial GaN-based LDs use the basal c-plane orientation of the wurtzite crystal, which can suffer from large internal electric fields due to discontinuities in spontaneous and piezoelectric polarizations, limiting device performance. The nonpolar orientation of GaN benefits from the lack of polarization-induced electric field as well as enhanced gain. This dissertation discusses some of the benefits and limitations of m-plane oriented nonpolar GaN for LD applications in the true blue spectrum (450 nm). Topics include an overview of material growth by metal-organic chemical vapor deposition (MOCVD), waveguide design and processing techniques for improving device performance for multiple lateral mode and single lateral mode ridge waveguides.
Book Synopsis Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes by : Shuji Nakamura
Download or read book Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes written by Shuji Nakamura and published by CRC Press. This book was released on 2000-03-09 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: The "blue laser" is an exciting new device used in physics. The potential is now being recognized for its development into a commercial lighting system using about a tenth of the power and with a thousand times the operating lifetime of a comparable conventional system. This comprehensive work introduces the subject at a level suitable for graduate students. It covers the basics physics of light emitting diodes (LEDs) and laser diodes (LDs) based on gallium nitride and related nitride semiconductors, and gives an outline of their structural, transport and optical properties, and the relevant device physics. It begins with the fundamentals, and covers both theory and experiment, as well as an examination of actual and potential device applications. Shuji Nakamura and Nichia Chemicals Industries made the initial breakthroughs in the field, and these have revealed that LEDs and LDs are a sophisticated physical phenomenon and a commercial reality.
Book Synopsis The Heteroepitaxial Growth of Semipolar GaN for Light Emitting Diodes by : John Francis Kaeding
Download or read book The Heteroepitaxial Growth of Semipolar GaN for Light Emitting Diodes written by John Francis Kaeding and published by . This book was released on 2007 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The dramatic emergence of high brightness blue and green light emitting diodes (LEDs) and blue-violet laser diodes relies on the grown of GaN and related alloys along the polar [0001] direction of the wurtzite crystal structure. Discontinuities in the spontaneous and piezoelectric polarization fields at heterointerfaces in optoelectronic device structures lead to the formation of large internal electric fields (& sim;MV/cm), resulting in a red-shift in the emission wavelength, a decrease in the radiative recombination rate, and a blue-shift in the emission wavelength with increasing drive current. The QCSE may be minimized or eliminated through the growth of GaN orientations inclined with respect to the polar [0001] axis--these growth orientations have been termed semipolar GaN.
Book Synopsis Epitaxial Growth of III-Nitride Compounds by : Takashi Matsuoka
Download or read book Epitaxial Growth of III-Nitride Compounds written by Takashi Matsuoka and published by Springer. This book was released on 2018-04-17 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
