2007 IEEE 19th International Conference on Indium Phosphide & Related Materials

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Publisher : IEEE
ISBN 13 : 9781424408740
Total Pages : 579 pages
Book Rating : 4.4/5 (87 download)

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Book Synopsis 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials by :

Download or read book 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials written by and published by IEEE. This book was released on 2007-01-01 with total page 579 pages. Available in PDF, EPUB and Kindle. Book excerpt:

State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9

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Author :
Publisher : The Electrochemical Society
ISBN 13 : 1566776538
Total Pages : 240 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 by : J. Wang

Download or read book State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 written by J. Wang and published by The Electrochemical Society. This book was released on 2008-10 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions focuses on issues pertinent to materials growth, characterization, processing, development, application of compound semiconductor materials and devices, including nitrides and wide-bandgap semiconductors.

Comprehensive Semiconductor Science and Technology

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Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Comprehensive Semiconductor Science and Technology by :

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on

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Publisher :
ISBN 13 : 9781509084746
Total Pages : pages
Book Rating : 4.0/5 (847 download)

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Book Synopsis Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on by :

Download or read book Indium Phosphide & Related Materials, 2007. IPRM '07. IEEE 19th International Conference on written by and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Mid-infrared Optoelectronics

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Publisher : Woodhead Publishing
ISBN 13 : 0081027389
Total Pages : 754 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Mid-infrared Optoelectronics by : Eric Tournié

Download or read book Mid-infrared Optoelectronics written by Eric Tournié and published by Woodhead Publishing. This book was released on 2019-10-19 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. - Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices - Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration - Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging

Analog and VLSI Circuits

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Publisher : CRC Press
ISBN 13 : 1351835017
Total Pages : 827 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Analog and VLSI Circuits by : Wai-Kai Chen

Download or read book Analog and VLSI Circuits written by Wai-Kai Chen and published by CRC Press. This book was released on 2018-10-08 with total page 827 pages. Available in PDF, EPUB and Kindle. Book excerpt: Featuring hundreds of illustrations and references, this volume in the third edition of the Circuits and Filters Handbook, provides the latest information on analog and VLSI circuits, omitting extensive theory and proofs in favor of numerous examples throughout each chapter. The first part of the text focuses on analog integrated circuits, presenting up-to-date knowledge on monolithic device models, analog circuit cells, high performance analog circuits, RF communication circuits, and PLL circuits. In the second half of the book, well-known contributors offer the latest findings on VLSI circuits, including digital systems, data converters, and systolic arrays.

Extreme Environment Electronics

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Publisher : CRC Press
ISBN 13 : 1351832808
Total Pages : 1044 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Extreme Environment Electronics by : John D. Cressler

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1044 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

Handbook for III-V High Electron Mobility Transistor Technologies

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Author :
Publisher : CRC Press
ISBN 13 : 0429862539
Total Pages : 430 pages
Book Rating : 4.4/5 (298 download)

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Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal

Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

VCSELs

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Publisher : Springer
ISBN 13 : 3642249868
Total Pages : 562 pages
Book Rating : 4.6/5 (422 download)

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Book Synopsis VCSELs by : Rainer Michalzik

Download or read book VCSELs written by Rainer Michalzik and published by Springer. This book was released on 2012-10-16 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt: The huge progress which has been achieved in the field is covered here, in the first comprehensive monograph on vertical-cavity surface-emitting lasers (VCSELs) since eight years. Apart from chapters reviewing the research field and the laser fundamentals, there are comprehensive updates on red and blue emitting VCSELs, telecommunication VCSELs, optical transceivers, and parallel-optical links for computer interconnects. Entirely new contributions are made to the fields of vectorial three-dimensional optical modeling, single-mode VCSELs, polarization control, polarization dynamics, very-high-speed design, high-power emission, use of high-contrast gratings, GaInNAsSb long-wavelength VCSELs, optical video links, VCSELs for optical mice and sensing, as well as VCSEL-based laser printing. The book appeals to researchers, optical engineers and graduate students.

International Conference on Indium Phosphide and Related Materials

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Publisher :
ISBN 13 :
Total Pages : 602 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis International Conference on Indium Phosphide and Related Materials by :

Download or read book International Conference on Indium Phosphide and Related Materials written by and published by . This book was released on 2000 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Compound Semiconductor Materials and Devices

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Publisher : Morgan & Claypool Publishers
ISBN 13 : 1627058532
Total Pages : 75 pages
Book Rating : 4.6/5 (27 download)

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Book Synopsis Compound Semiconductor Materials and Devices by : Zhaojun Liu

Download or read book Compound Semiconductor Materials and Devices written by Zhaojun Liu and published by Morgan & Claypool Publishers. This book was released on 2016-02-22 with total page 75 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.

RF Probe-Induced On-Wafer Measurement Errors in the Millimeter-Wave Frequency Range

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Publisher : KIT Scientific Publishing
ISBN 13 : 3731508222
Total Pages : 212 pages
Book Rating : 4.7/5 (315 download)

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Book Synopsis RF Probe-Induced On-Wafer Measurement Errors in the Millimeter-Wave Frequency Range by : Mueller, Daniel

Download or read book RF Probe-Induced On-Wafer Measurement Errors in the Millimeter-Wave Frequency Range written by Mueller, Daniel and published by KIT Scientific Publishing. This book was released on 2018-11-22 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Measurement at millimeter-wave frequencies are prone to parasitic effects which distort the overall results. Especially the use of RF probes introduces unknown distortions, even after the measurement setup is calibrated. This works investigates these distortions based on electromagnetic field simulations of integrated circuits in conjunction with models of the used RF probes. This allows to comprehend the observed distortions and successfully resolve the root of the distortions.

TSV 3D RF Integration

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Publisher : Elsevier
ISBN 13 : 0323996035
Total Pages : 294 pages
Book Rating : 4.3/5 (239 download)

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Book Synopsis TSV 3D RF Integration by : Shenglin Ma

Download or read book TSV 3D RF Integration written by Shenglin Ma and published by Elsevier. This book was released on 2022-04-27 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt: TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters. A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology. - Provides a detailed demonstration of the design and process development of HR-Si (High-Resistivity Silicon) interposer technology - Presents a series of implementation case studies that detail modeling and simulation, integration, qualification and testing methods - Offers a systematic and comparative literature review of HR-Si interposer technology by topic - Offers solutions to problems with TSV (through silicon via) interposer technology, including high frequency loss and cooling problems - Gives a systematic and accessible accounting on this leading technology

Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems

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Publisher : Springer Nature
ISBN 13 : 9811562598
Total Pages : 858 pages
Book Rating : 4.8/5 (115 download)

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Book Synopsis Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems by : Bekkay Hajji

Download or read book Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems written by Bekkay Hajji and published by Springer Nature. This book was released on 2020-08-14 with total page 858 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book includes papers presented at the Second International Conference on Electronic Engineering and Renewable Energy (ICEERE 2020), which focus on the application of artificial intelligence techniques, emerging technology and the Internet of things in electrical and renewable energy systems, including hybrid systems, micro-grids, networking, smart health applications, smart grid, mechatronics and electric vehicles. It particularly focuses on new renewable energy technologies for agricultural and rural areas to promote the development of the Euro-Mediterranean region. Given its scope, the book is of interest to graduate students, researchers and practicing engineers working in the fields of electronic engineering and renewable energy.

Memoirs of the Institute of Scientific and Industrial Research, Osaka University

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Publisher :
ISBN 13 :
Total Pages : 420 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Memoirs of the Institute of Scientific and Industrial Research, Osaka University by : Ōsaka Daigaku. Sangyō Kagaku Kenkyūjo

Download or read book Memoirs of the Institute of Scientific and Industrial Research, Osaka University written by Ōsaka Daigaku. Sangyō Kagaku Kenkyūjo and published by . This book was released on 2008 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:

75th Anniversary of the Transistor

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Publisher : John Wiley & Sons
ISBN 13 : 1394202466
Total Pages : 469 pages
Book Rating : 4.3/5 (942 download)

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Book Synopsis 75th Anniversary of the Transistor by : Arokia Nathan

Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-07-11 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.

Advanced Nanoelectronics

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Publisher : John Wiley & Sons
ISBN 13 : 352734358X
Total Pages : 284 pages
Book Rating : 4.5/5 (273 download)

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Book Synopsis Advanced Nanoelectronics by : Muhammad Mustafa Hussain

Download or read book Advanced Nanoelectronics written by Muhammad Mustafa Hussain and published by John Wiley & Sons. This book was released on 2019-01-04 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.